SM4305PSKPC-TRG-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS).
2	S	passive	Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS).
3	S	passive	Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS).
4	G	input	Gate terminal of the P-channel MOSFET, with a gate-source voltage limit of ±20 V (VGS) in the absolute maximum ratings.
5	D	passive	Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS).
6	D	passive	Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS).
7	D	passive	Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS).
8	D	passive	Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS).
9	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	DFN5x6-8
Category	Triode/MOS Tube/Transistor
Pins	9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			-30	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID			-60	A	TC = 25 °C	1
Continuous Drain Current	ID			-50.7	A	TC = 70 °C	1
Continuous Drain Current	ID			-47.3	A	TA = 25 °C	1
Continuous Drain Current	ID			-43.9	A	TA = 70 °C	1
Pulsed Drain Current	IDM			-150	A	t = 300 µs	1
Continuous Source-Drain Diode Current	IS			-58	A	TC = 25 °C	1
Continuous Source-Drain Diode Current	IS			-46	A	TA = 25 °C	1
Single Pulse Avalanche Current	IAS			-40	A	L = 0.1 mH	1
Single Pulse Avalanche Energy	EAS			80	mJ		1
Maximum Power Dissipation	PD			75	W	TC = 25 °C	1
Maximum Power Dissipation	PD			40	W	TC = 70 °C	1
Maximum Power Dissipation	PD			3.1	W	TA = 25 °C	1
Maximum Power Dissipation	PD			2	W	TA = 70 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Maximum Junction-to-Ambient	RthJA		33	40	°C/W	t ≤ 10 s	1
Maximum Junction-to-Ambient	RthJA			90	°C/W	Steady state (note d)	1
Maximum Junction-to-Foot (Drain)	RthJF		15	17	°C/W	Steady state	1
Drain-Source Breakdown Voltage	V(BR)DSS	-30			V	VGS = 0 V, ID = -250 µA	2
VDS Temperature Coefficient	ΔVDS/ΔTJ		-24		mV/°C	ID = -250 µA	2
VGS(th) Temperature Coefficient	ΔVGS(th)/ΔTJ		6		mV/°C		2
Gate-Source Threshold Voltage	VGS(th)	-1		-2.5	V	VDS = VGS, ID = -250 µA	2
Gate-Source Leakage	IGSS	-150		150	µA	VDS = 0 V, VGS = ±25 V	2
Gate-Source Leakage	IGSS	-15		15	µA	VDS = 0 V, VGS = ±20 V	2
Zero Gate Voltage Drain Current	IDSS			-1	µA	VDS = -30 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			-10	µA	VDS = -30 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	-20			A	VDS ≤ -5 V, VGS = -10 V	2
Drain-Source On-State Resistance	RDS(on)			0.008	Ω	VGS = -10 V, ID = -13 A	2
Drain-Source On-State Resistance	RDS(on)			0.009	Ω	VGS = -6 V, ID = -10 A	2
Drain-Source On-State Resistance	RDS(on)			0.012	Ω	VGS = -4.5 V, ID = -8 A	2
Forward Transconductance	gfs		44		S	VDS = -15 V, ID = -13 A	2
Total Gate Charge	Qg		102	153	nC	VDS = -15 V, VGS = -10 V, ID = -17.3 A	2
Total Gate Charge	Qg		66	80	nC	VDS = -15 V, VGS = -5 V, ID = -17.3 A	2
Gate Resistance	Rg		1.3	2.6	Ω	f = 1 MHz	2
Turn-On Delay Time	td(on)		70	105	ns	VDD = 0 V, RL = 1.5 Ω, ID ≈ -10 A, VGEN = -4.5 V, Rg = 1 Ω	2
Rise Time	tr		70	105	ns	VDD = 0 V, RL = 1.5 Ω, ID ≈ -10 A, VGEN = -4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		45	68	ns	VDD = 0 V, RL = 1.5 Ω, ID ≈ -10 A, VGEN = -4.5 V, Rg = 1 Ω	2
Fall Time	tf		27	41	ns	VDD = 0 V, RL = 1.5 Ω, ID ≈ -10 A, VGEN = -4.5 V, Rg = 1 Ω	2
Turn-On Delay Time	td(on)		18	30	ns	VDD = -15 V, RL = 1.5 Ω, ID ≈ -10 A, VGEN = -10 V, Rg = 1 Ω	2
Rise Time	tr		15	25	ns	VDD = -15 V, RL = 1.5 Ω, ID ≈ -10 A, VGEN = -10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		52	80	ns	VDD = -15 V, RL = 1.5 Ω, ID ≈ -10 A, VGEN = -10 V, Rg = 1 Ω	2
Fall Time	tf		14	25	ns	VDD = -15 V, RL = 1.5 Ω, ID ≈ -10 A, VGEN = -10 V, Rg = 1 Ω	2
Body Diode Voltage	VSD		-0.78	-1.2	V	IS = -10 A, VGS = 0 V	2
Body Diode Reverse Recovery Time	trr		35	53	ns	IF = -10 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Body Diode Reverse Recovery Charge	Qrr		25	38	nC	IF = -10 A, dI/dt = 100 A/µs, TJ = 25 °C	2

CAD (KiCad official)

Symbol: SM4305PSKPC-TRG-VB
Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
3D model: DFN5x6-8 (KiCad packages3D, STEP)
3D model files: sm4305pskpc-trg-vb-etched.step / sm4305pskpc-trg-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm4305pskpc-trg-vb.step / sm4305pskpc-trg-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (7 pp, sha256 5a6be5b1c52a7438, retrieved 2026-11-02, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

SM4305PSKPC-TRG-VB

Verified SM4305PSKPC-TRG-VB

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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