SM4301PSKC-TRG-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V.
2	S	passive	Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V.
3	S	passive	Source terminal of the P-channel MOSFET, with continuous source-drain diode current of -5 A at TC = 25 °C.
4	G	input	Gate control terminal, with gate-source voltage limited to ±20 V in the absolute maximum ratings.
5	D	passive	Drain terminal, with continuous drain current of -18 A at TC = 25 °C.
6	D	passive	Drain terminal, with continuous drain current of -18 A at TC = 25 °C.
7	D	passive	Drain terminal, with continuous drain current of -18 A at TC = 25 °C.
8	D	passive	Drain terminal, with continuous drain current of -18 A at TC = 25 °C.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SO-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-source voltage	VDS	-30			V	TA = 25 °C, unless otherwise noted	1
Gate-source voltage	VGS	-20		20	V		1
Continuous drain current (TJ = 150 °C)	ID	-18			A	TC = 25 °C	1
Continuous drain current (TJ = 150 °C)	ID	-13			A	TC = 70 °C	1
Continuous drain current (TJ = 150 °C)	ID	-11			A	TA = 25 °C	1
Continuous drain current (TJ = 150 °C)	ID	-8			A	TA = 70 °C	1
Pulsed drain current	IDM	-145			A	t = 100 μs	1
Continuous source-drain diode current	IS	-5			A	TC = 25 °C	1
Continuous source-drain diode current	IS	-2.8			A	TA = 25 °C, notes b, c	1
Single pulse avalanche energy	EAS			31.2	mJ		1
Maximum power dissipation	PD			5.6	W	TC = 25 °C	1
Maximum power dissipation	PD			3.6	W	TC = 70 °C	1
Maximum power dissipation	PD			3.1	W	TA = 25 °C, notes b, c	1
Maximum power dissipation	PD			2	W	TA = 70 °C, notes b, c	1
Operating junction and storage temperature range	TJ, Tstg	-55		150	°C		1
Soldering recommendations (peak temperature)				260	°C	note c	1
Maximum junction-to-ambient	RthJA		34	40	°C/W	t = 10 s, notes b, c	1
Maximum junction-to-case (drain)	RthJF		18	22	°C/W	steady state	1
Maximum junction-to-ambient steady state	RthJA			85	°C/W	steady state, note f	1
Drain-source breakdown voltage	VDS	-30			V	VGS = 0 V, ID = -250 μA	2
VDS temperature coefficient	VDS/TJ		-17		mV/°C	ID = -10 mA	2
Gate-source threshold voltage	VGS(th)	-1		-2.2	V	VDS = VGS, ID = 250 μA	2
Gate-source leakage	IGSS			100	nA	VDS = 0 V, VGS = +16 / -20 V	2
Zero gate voltage drain current	IDSS			-1	μA	VDS = -30 V, VGS = 0 V	2
Zero gate voltage drain current	IDSS			-15	μA	VDS = -30 V, VGS = 0 V, TJ = 70 °C	2
On-state drain current	ID(on)	-40			A	VDS -10 V, VGS = -10 V	2
Drain-source on-state resistance	RDS(on)		0.005		Ω	VGS = -10 V, ID = -15 A	2
Drain-source on-state resistance	RDS(on)		0.008		Ω	VGS = -4.5 V, ID = -10 A	2
Forward transconductance	gfs		81		S	VDS = -15 V, ID = -15 A	2
Input capacitance	Ciss		3490		pF	VDS = -15 V, VGS = 0 V, f = 1 MHz	2
Output capacitance	Coss		1420		pF	VDS = -15 V, VGS = 0 V, f = 1 MHz	2
Reverse transfer capacitance	Crss		70		pF	VDS = -15 V, VGS = 0 V, f = 1 MHz	2
Total gate charge	Qg		56	84	nC	VDS = -15 V, VGS = -10 V, ID = -10 A	2
Gate-source charge	Qgs		-9.4		nC		2
Gate-drain charge	Qgd		-8.2		nC		2
Gate resistance	Rg	1.5	3.5	6	Ω	f = 1 MHz	2
Turn-on delay time	td(on)		5	30	ns	VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω	2
Rise time	tr		6	12	ns	VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω	2
Turn-off delay time	td(off)		-39	78	ns	VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω	2
Fall time	tf		-10	20	ns	VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω	2
Turn-on delay time	td(on)		34	68	ns	VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω	2
Rise time	tr		86	172	ns	VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω	2
Turn-off delay time	td(off)		-31	62	ns	VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω	2
Fall time	tf		-22	44	ns	VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω	2
Continuous source-drain diode current	IS			-5	A	TC = 25 °C	2
Pulse diode forward current	ISM			-150	A		2
Body diode voltage	VSD		-0.73	-1.1	V	IS = -5 A, VGS = 0 V	2
Body diode reverse recovery charge	Qrr		-41	82	nC	IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C	2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
contacts	copper		d. The SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation	1

CAD (KiCad official)

Symbol: SM4301PSKC-TRG-VB
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SO-8 (KiCad packages3D, STEP)
3D model files: sm4301pskc-trg-vb-etched.step / sm4301pskc-trg-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm4301pskc-trg-vb.step / sm4301pskc-trg-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 0f6f952f4a644a4d, retrieved 2026-10-30, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

SM4301PSKC-TRG-VB

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3D Model

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