component
SM4132T9RL
Public Made by Adomby adom
SPS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSM4132T9RL
SPS · MOSFETs · TO-252
SM4132T9RL from SPS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20V maximum, with VGS(th) of 1.5V min, 2.3V typ and 3V max at ID=250µA. |
| 2 | D | passive | Drain, also the exposed tab; drain-source voltage is rated at 30V maximum with continuous drain current of 85A at TA=25°C. |
| 3 | S | passive | Source; body-diode continuous current is 85A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SPS |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 85 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 63 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 136 | A | 1 | |||
| Avalanche Current | IAR | 27.2 | A | 1 | |||
| Repetitive avalanche energy | EAR | 62.6 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 100 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 50 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 15 | 22 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 30 | 36 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Lead | RθJL | 9 | 14 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID = -250uA, VGS = 0V | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.5 | 2.3 | 3 | V | VDS = VGS ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 2.8 | 4 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 4.2 | 6 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Forward Transconductance | gFS | 96 | S | VDS=5V, ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 0.72 | 1 | V | IS=1A | 2 | |
| Maximum Body-Diode Continuous Current | IS | 85 | A | 2 | |||
| Input Capacitance | Ciss | 3700 | 4514 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Output Capacitance | Coss | 700 | 861 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 390 | 464 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Gate resistance | Rg | 8.8 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Body Diode Reverse Recovery Time | trr | 34 | ns | IF=-8A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 30 | nC | IF=18A, dI/dt=500A/µs | 2 | ||
| Total Gate Charge (10V) | Qg | 33 | nC | VGS=10V, VDS=15V, ID=20A | 2 | ||
| Total Gate Charge (4.5V) | Qg | 16.5 | nC | VGS=10V, VDS=15V, ID=20A | 2 | ||
| Gate Source Charge | Qgs | 12.32 | nC | VGS=10V, VDS=15V, ID=20A | 2 | ||
| Gate Drain Charge | Qgd | 17.6 | nC | VGS=10V, VDS=15V, ID=20A | 2 | ||
| Turn-On Delay Time | tD(on) | 17 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 13.6 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 47.6 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 15.3 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
CAD (KiCad official)
- Symbol:
SM4132T9RL - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sm4132t9rl-etched.step/sm4132t9rl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sm4132t9rl.step/sm4132t9rl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SPS datasheet (4 pp, sha256
b0c8e92bd43d9b0a, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).