component
SM4027PSU
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SM4027PSU
UMW · MOSFETs · TO-252
SM4027PSU from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the -40 V P-channel MOSFET; the gate-source voltage is rated at ±20 V. |
| 2 | D | passive | DRAIN terminal, rated for a drain-source voltage VDS of -40 V; the datasheet's junction-to-case thermal resistance is specified to the drain (RthJC 1.1 °C/W). |
| 3 | S | passive | SOURCE terminal of the P-channel MOSFET, referenced by the ±20 V gate-source rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -40 | V | VGS=0V, ID=-250µA | 3 | ||
| Gate Threshold Voltage | VGS(th) | -1.5 | -2.5 | V | VDS=VGS, ID=-250µA | 3 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Zero gate voltage drain current | IDSS | -1 | µA | VDS=-40V, VGS=0V | 3 | ||
| Zero gate voltage drain current | IDSS | -50 | µA | VDS=-40V, VGS=0V, TJ=125°C | 3 | ||
| Zero gate voltage drain current | IDSS | -150 | µA | VDS=-40V, VGS=0V, TJ=175°C | 3 | ||
| On-State Drain Current | ID(ON) | -50 | A | VDS≤-5V, VGS=-10V | 3 | ||
| Forward Transconductance | gFS | 1.5 | 61 | S | VDS=-15V, ID=-17A | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | 17 | mΩ | VGS=-10V, ID=-17A | 3 | ||
| Drain-Source On-State Resistance | RDS(ON) | 29 | mΩ | VGS=-4.5V, ID=-14A | 3 | ||
| Input Capacitance | Ciss | 2872 | 3950 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Output Capacitance | Coss | 508 | 635 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 352 | 440 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Total Gate Charge | Qg | 60 | 80 | nC | VDS=-30V, VGS=-10V, ID=-50A | 3 | |
| Gate-Source Charge | Qgs | 5.7 | 8.6 | nC | VDS=-30V, VGS=-10V, ID=-50A | 3 | |
| Gate-Drain Charge | Qgd | 14.7 | 22 | nC | VDS=-30V, VGS=-10V, ID=-50A | 3 | |
| Gate Resistance | RG | 3 | 4.5 | Ω | f=1MHz | 3 | |
| Turn-On Delay Time | tD(on) | 10 | 15 | ns | VDD=-20V, RL=0.4Ω; ID≌-50A, VGEN=-10V, RG=1Ω | 3 | |
| Rise Time | tr | 12 | 18 | ns | VDD=-20V, RL=0.4Ω; ID≌-50A, VGEN=-10V, RG=1Ω | 3 | |
| Turn-Off Delay Time | tD(off) | 40 | 60 | ns | VDD=-20V, RL=0.4Ω; ID≌-50A, VGEN=-10V, RG=1Ω | 3 | |
| Fall Time | tf | 16 | 24 | ns | VDD=-20V, RL=0.4Ω; ID≌-50A, VGEN=-10V, RG=1Ω | 3 | |
| Forward Voltage | VSD | -1.5 | V | IF=-50A, VGS=0V | 4 | ||
| Pulsed Current | ISM | -200 | A | Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % | 4 | ||
| Drain-Source Voltage | VDS | -40 | V | TC=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -50 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | -50 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | -39 | A | TC=125°C | 1 | ||
| Pulsed Drain Current | IDM | -200 | A | Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % | 1 | ||
| Single Pulse Avalanche Current | IAS | -40 | A | L=0.1mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | L=0.1mH | 1 | ||
| Maximum Power Dissipation | PD | 136 | W | TC=25°C | 1 | ||
| Maximum Power Dissipation | PD | 3 | W | TA=25°C | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 50 | °C/W | PCB Mount (1" square PCB, FR4) | 2 | ||
| Junction-to-Case Thermal Resistance (Drain) | RthJC | 1.1 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
SM4027PSU - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sm4027psu-etched.step/sm4027psu-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sm4027psu.step/sm4027psu.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
d24e1d620d163210, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SM4027PSU
**UMW** · MOSFETs · TO-252
SM4027PSU from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the -40 V P-channel MOSFET; the gate-source voltage is rated at ±20 V. |
| 2 | D | passive | DRAIN terminal, rated for a drain-source voltage VDS of -40 V; the datasheet's junction-to-case thermal resistance is specified to the drain (RthJC 1.1 °C/W). |
| 3 | S | passive | SOURCE terminal of the P-channel MOSFET, referenced by the ±20 V gate-source rating. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -40 | | | V | VGS=0V, ID=-250µA | 3 |
| Gate Threshold Voltage | VGS(th) | -1.5 | | -2.5 | V | VDS=VGS, ID=-250µA | 3 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS=-40V, VGS=0V | 3 |
| Zero gate voltage drain current | IDSS | | | -50 | µA | VDS=-40V, VGS=0V, TJ=125°C | 3 |
| Zero gate voltage drain current | IDSS | | | -150 | µA | VDS=-40V, VGS=0V, TJ=175°C | 3 |
| On-State Drain Current | ID(ON) | -50 | | | A | VDS≤-5V, VGS=-10V | 3 |
| Forward Transconductance | gFS | 1.5 | 61 | | S | VDS=-15V, ID=-17A | 3 |
| Drain-Source On-State Resistance | RDS(ON) | | | 17 | mΩ | VGS=-10V, ID=-17A | 3 |
| Drain-Source On-State Resistance | RDS(ON) | | | 29 | mΩ | VGS=-4.5V, ID=-14A | 3 |
| Input Capacitance | Ciss | | 2872 | 3950 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 |
| Output Capacitance | Coss | | 508 | 635 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 352 | 440 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 |
| Total Gate Charge | Qg | | 60 | 80 | nC | VDS=-30V, VGS=-10V, ID=-50A | 3 |
| Gate-Source Charge | Qgs | | 5.7 | 8.6 | nC | VDS=-30V, VGS=-10V, ID=-50A | 3 |
| Gate-Drain Charge | Qgd | | 14.7 | 22 | nC | VDS=-30V, VGS=-10V, ID=-50A | 3 |
| Gate Resistance | RG | | 3 | 4.5 | Ω | f=1MHz | 3 |
| Turn-On Delay Time | tD(on) | | 10 | 15 | ns | VDD=-20V, RL=0.4Ω; ID≌-50A, VGEN=-10V, RG=1Ω | 3 |
| Rise Time | tr | | 12 | 18 | ns | VDD=-20V, RL=0.4Ω; ID≌-50A, VGEN=-10V, RG=1Ω | 3 |
| Turn-Off Delay Time | tD(off) | | 40 | 60 | ns | VDD=-20V, RL=0.4Ω; ID≌-50A, VGEN=-10V, RG=1Ω | 3 |
| Fall Time | tf | | 16 | 24 | ns | VDD=-20V, RL=0.4Ω; ID≌-50A, VGEN=-10V, RG=1Ω | 3 |
| Forward Voltage | VSD | | | -1.5 | V | IF=-50A, VGS=0V | 4 |
| Pulsed Current | ISM | | | -200 | A | Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % | 4 |
| Drain-Source Voltage | VDS | | | -40 | V | TC=25°C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | -50 | A | TC=25°C | 1 |
| Continuous Drain Current | ID | | | -50 | A | TC=25°C | 1 |
| Continuous Drain Current | ID | | | -39 | A | TC=125°C | 1 |
| Pulsed Drain Current | IDM | | | -200 | A | Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % | 1 |
| Single Pulse Avalanche Current | IAS | | | -40 | A | L=0.1mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 80 | mJ | L=0.1mH | 1 |
| Maximum Power Dissipation | PD | | | 136 | W | TC=25°C | 1 |
| Maximum Power Dissipation | PD | | | 3 | W | TA=25°C | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | | 50 | °C/W | PCB Mount (1" square PCB, FR4) | 2 |
| Junction-to-Case Thermal Resistance (Drain) | RthJC | | | 1.1 | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `SM4027PSU`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sm4027psu-etched.step` / `sm4027psu-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm4027psu.step` / `sm4027psu.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755887231599435776) (11 pp, sha256 `d24e1d620d163210`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sm4027psu-datasheet.pdf)