SM2A04NSU-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V.
2	D	passive	Drain of the N-channel MOSFET (also the case/tab, junction-to-case 'Drain'), rated for VDS of 200 V.
3	S	passive	Source of the N-channel MOSFET, with continuous source (diode conduction) current of 6 A.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			200	V	TA = 25 °C	1
Gate-Source Voltage	VGS	-20		20	V	TA = 25 °C	1
Continuous Drain Current	ID			7	A	TC = 125 °C, TJ = 175 °C	1
Pulsed Drain Current	IDM			12	A		1
Continuous Source Current (Diode Conduction)	IS			6	A		1
Avalanche Current	IAS			6	A	L = 0.1 mH	1
Single Pulse Avalanche Energy	EAS			18	mJ	L = 0.1 mH	1
Maximum Power Dissipation	PD			96	W	TC = 25 °C	1
Maximum Power Dissipation	PD			3	W	TA = 25 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		175	°C		1
Junction-to-Ambient Thermal Resistance	RthJA		15	18	°C/W	t ≤ 10 s	1
Junction-to-Ambient Thermal Resistance	RthJA		40	50	°C/W	Steady State	1
Junction-to-Case (Drain) Thermal Resistance	RthJC		0.85	1.1	°C/W		1
Drain-Source Breakdown Voltage	VDS	200			V	VGS = 0 V, ID = 250 µA	2
Gate-Body Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 20 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 200 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			50	µA	VDS = 200 V, VGS = 0 V, TJ = 125 °C	2
Zero Gate Voltage Drain Current	IDSS			250	µA	VDS = 200 V, VGS = 0 V, TJ = 175 °C	2
On-State Drain Current	ID(on)	40			A	VDS = 5 V, VGS = 10 V	2
Forward Transconductance	gfs		35		S	VDS = 15 V, ID = 3 A	2
Input Capacitance	Ciss		1800		pF	VGS = 0 V, VDS = 25 V, F = 1 MHz	2
Output Capacitance	Coss		180		pF	VGS = 0 V, VDS = 25 V, F = 1 MHz	2
Reverse Transfer Capacitance	Crss		80		pF	VGS = 0 V, VDS = 25 V, F = 1 MHz	2
Gate-Source Charge	Qgs		8		nC	VDS = 100 V, VGS = 10 V, ID = 3 A	2
Gate-Drain Charge	Qgd		12		nC	VDS = 100 V, VGS = 10 V, ID = 3 A	2
Gate Resistance	Rg	0.5		2.9	Ω		2
Pulsed Source Current	ISM			5	A	TC = 25 °C	2
Diode Forward Voltage	VSD		0.9	1.5	V	IF = 3 A, VGS = 0 V	2
Source-Drain Reverse Recovery Time	trr		180	250	ns	IF = 3 A, dI/dt = 100 A/µs	2

CAD (KiCad official)

Symbol: SM2A04NSU-VB
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: sm2a04nsu-vb-etched.step / sm2a04nsu-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm2a04nsu-vb.step / sm2a04nsu-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (7 pp, sha256 73010a53e39a9d83, retrieved 2026-10-31, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

SM2A04NSU-VB

Verified SM2A04NSU-VB

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README