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SM2910T9RL

Public Made by Adom

by adom

SPS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SM2910T9RL

SPS · MOSFETs · TO-252

SM2910T9RL from SPS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20 V maximum, with a gate threshold of 1.0 to 2.5 V at ID=250 µA.
2 D passive Drain, connected to the exposed tab; drain-source voltage is rated 100 V maximum and continuous drain current is 50 A at TC=25℃.
3 S passive Source, the power return terminal of the N-channel MOSFET, with continuous body-diode forward current of 50 A maximum.

Key specifications

Parameter Value
Manufacturer SPS
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V TC=25℃ 1
Gate-Source Voltage VGSS -20 20 V TC=25℃ 1
Continuous Drain Current ID 50 A TC = 25℃ 1
Continuous Drain Current ID 30 A TC = 100℃ 1
Pulsed Drain Current IDM 150 A note1 1
Single Pulsed Avalanche Energy EAS 62.6 mJ note2 1
Power Dissipation PD 73 W TC = 25℃ 1
Thermal Resistance, Junction to Case RθJC 2 ℃/W 1
Operating and Storage Temperature Range TJ, TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 18 28 mΩ VGS=10V, ID=20A 2
Static Drain-Source on-Resistance RDS(on) 22 32 mΩ VGS=4.5V, ID=10A 2
Maximum Continuous Drain to Source Diode Forward Current IS 50 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 150 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=30A 2
Input Capacitance Ciss 3727 pF VDS=25V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 40 nC VDS=30V, ID=15A, VGS=10V 2
Gate-Source Charge Qgs 6.2 nC VDS=30V, ID=15A, VGS=10V 2
Gate-Drain (Miller) Charge Qgd 28 nC VDS=30V, ID=15A, VGS=10V 2
Turn-on Delay Time td(on) 22 ns VDS=30V, ID=15A, RG=1.8Ω, VGS=10V 2
Turn-on Rise Time tr 182 ns VDS=30V, ID=15A, RG=1.8Ω, VGS=10V 2
Turn-off Delay Time td(off) 80 ns VDS=30V, ID=15A, RG=1.8Ω, VGS=10V 2
Turn-off Fall Time tf 142 ns VDS=30V, ID=15A, RG=1.8Ω, VGS=10V 2
Body Diode Reverse Recovery Time trr 71 ns IF=30A, dI/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 145 nC IF=30A, dI/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: SM2910T9RL
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sm2910t9rl-etched.step / sm2910t9rl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm2910t9rl.step / sm2910t9rl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SPS datasheet (5 pp, sha256 7e1d8c21b98d9e18, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF