main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs sm2630dsc-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 3d ago
viewers sm2630dsc-vb: viewers · Ray 27d ago
package.json Publish 0.1.0 · Ray 27d ago
page.json Brief states the pinout check that actually ran (was an unconditional "Datasheet-verified pinout") · Ray 11d ago
README.md sm2630dsc-vb: laser-etched CAD + chip hero (factory 2.0.0 backfill) · Ray 15d ago
sm2630dsc-vb-etched.fit.json sm2630dsc-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 3d ago
sm2630dsc-vb-etched.glb sm2630dsc-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 3d ago
sm2630dsc-vb-etched.step sm2630dsc-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 3d ago
sm2630dsc-vb.glb Publish 0.1.0 · Ray 27d ago
sm2630dsc-vb.kicad_mod Publish 0.1.0 · Ray 27d ago
sm2630dsc-vb.kicad_sym Publish 0.1.0 · Ray 27d ago
sm2630dsc-vb.lbr Publish 0.1.0 · Ray 27d ago
sm2630dsc-vb.step Publish 0.1.0 · Ray 27d ago

SM2630DSC-VB

VBsemi Elec · MOSFETs · TSOP-6

SM2630DSC-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1. Gate-Source threshold VGS(th) = 0.4 to 1.5 V (ID = 250 µA). Absolute maximum VGS = ±12 V.
2 S2 passive Source of MOSFET 2. Current-carrying source terminal; body diode anode. Continuous source-drain diode current IS = 1.17 A (TC = 25 °C).
3 G2 input Gate of MOSFET 2. Gate-Source threshold VGS(th) = 0.4 to 1.5 V (ID = 250 µA). Absolute maximum VGS = ±12 V.
4 D2 passive Drain of MOSFET 2. Drain-source breakdown voltage VDS = 20 V (min). Continuous drain current ID = 6.0 A at TC = 25 °C, RDS(on) = 22 mΩ at VGS = 4.5 V.
5 S1 passive Source of MOSFET 1. Current-carrying source terminal; body diode anode. Continuous source-drain diode current IS = 1.17 A (TC = 25 °C).
6 D1 passive Drain of MOSFET 1. Drain-source breakdown voltage VDS = 20 V (min). Continuous drain current ID = 6.0 A at TC = 25 °C, RDS(on) = 22 mΩ at VGS = 4.5 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

CAD (KiCad official)

  • Symbol: SM2630DSC-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: sm2630dsc-vb-etched.step / sm2630dsc-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm2630dsc-vb.step / sm2630dsc-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 0982e1090e805e85, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF