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SM2312SRL-HXY

HXY MOSFET · MOSFETs · SOT-23-3L

SM2312SRL-HXY from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage limited to ±12 V and a threshold of 0.5 V min to 1.0 V max at 250 μA.
2 D passive Drain of the N-channel MOSFET, rated for VDS of 20 V and continuous drain current of 6 A at TA=25℃.
3 S passive Source of the N-channel MOSFET, the reference terminal for the 20 V drain-source and ±12 V gate-source ratings.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23-3L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 22.5 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.65 1 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 22 27 mΩ VGS=4.5V, ID=4.0 A 2
Drain-Source On-State Resistance RDS(ON) 28 40 mΩ VGS=2.5V, ID=4.5A 2
Total Gate Charge Qg 10 15 nC VDS=10V,ID=3A,VGS=4.5V 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=1A 2
Diode Forward Current IS 4.5 A 2
Drain-Source Voltage VDS 20 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Continuous Drain Current ID 6 A TA=25℃ 1
Continuous Drain Current ID 3.6 A TA=70℃ 1
Drain Current-Pulsed IDM 15 A Note 1 1
Maximum Power Dissipation PD 1.25 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 100 ℃/W Note 2 1

CAD (KiCad official)

  • Symbol: SM2312SRL-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: sm2312srl-hxy-etched.step / sm2312srl-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm2312srl-hxy.step / sm2312srl-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 72049f645078c3e4, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF