component
SM2305SRL-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SM2305SRL-HXY
HXY MOSFET · MOSFETs · SOT-23
SM2305SRL-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12 V and the device operates with gate voltages as low as 2.5 V. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source current is -4.9 A. |
| 3 | D | passive | Drain; drain-source voltage is -20 V and continuous drain current is -5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 35 | 45 | mΩ | VGS=-4.5V , ID=-4.9A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 45 | 60 | mΩ | VGS=-2.5V , ID=-3.4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 65 | 85 | mΩ | VGS=-1.8V , ID=-2A | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -1 | V | VGS=VDS , ID =-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-16V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-16V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V , VDS=0V | 2 | |
| Total Gate Charge (-4.5V) | Qg | 10.2 | 14.3 | nC | VDS=-15V , VGS=-4.5V , ID=-3A | 2 | |
| Gate-Source Charge | Qgs | 1.89 | 2.6 | nC | VDS=-15V , VGS=-4.5V , ID=-3A | 2 | |
| Gate-Drain Charge | Qgd | 3.1 | 4.3 | nC | VDS=-15V , VGS=-4.5V , ID=-3A | 2 | |
| Turn-On Delay Time | Td(on) | 5.6 | 11.2 | ns | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | 2 | |
| Rise Time | Tr | 40.8 | 73 | ns | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | 2 | |
| Turn-Off Delay Time | Td(off) | 33.6 | 67 | ns | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | 2 | |
| Fall Time | Tf | 18 | 36 | ns | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | 2 | |
| Input Capacitance | Ciss | 857 | 1200 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | |
| Output Capacitance | Coss | 114 | 160 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 108 | 151 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | |
| Continuous Source Current | IS | -4.9 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | -14 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -20 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | -5 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | -14 | A | TA=25℃, Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 1.31 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 120 | ℃/W | Note 2 | 1 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.014 | V/℃ | Reference to 25℃ , ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 3.95 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 12.8 | S | VDS=-5V , ID=-3A | 2 | ||
| Reverse Recovery Time | trr | 21.8 | nS | IF=-3A , di/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 6.9 | nC | IF=-3A , di/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
SM2305SRL-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sm2305srl-hxy-etched.step/sm2305srl-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sm2305srl-hxy.step/sm2305srl-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
5ffa32906ecce0e3, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SM2305SRL-HXY
**HXY MOSFET** · MOSFETs · SOT-23
SM2305SRL-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12 V and the device operates with gate voltages as low as 2.5 V. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source current is -4.9 A. |
| 3 | D | passive | Drain; drain-source voltage is -20 V and continuous drain current is -5 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V , ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 35 | 45 | mΩ | VGS=-4.5V , ID=-4.9A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 45 | 60 | mΩ | VGS=-2.5V , ID=-3.4A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 65 | 85 | mΩ | VGS=-1.8V , ID=-2A | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | | -1 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-16V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | -5 | uA | VDS=-16V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V , VDS=0V | 2 |
| Total Gate Charge (-4.5V) | Qg | | 10.2 | 14.3 | nC | VDS=-15V , VGS=-4.5V , ID=-3A | 2 |
| Gate-Source Charge | Qgs | | 1.89 | 2.6 | nC | VDS=-15V , VGS=-4.5V , ID=-3A | 2 |
| Gate-Drain Charge | Qgd | | 3.1 | 4.3 | nC | VDS=-15V , VGS=-4.5V , ID=-3A | 2 |
| Turn-On Delay Time | Td(on) | | 5.6 | 11.2 | ns | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | 2 |
| Rise Time | Tr | | 40.8 | 73 | ns | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | 2 |
| Turn-Off Delay Time | Td(off) | | 33.6 | 67 | ns | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | 2 |
| Fall Time | Tf | | 18 | 36 | ns | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | 2 |
| Input Capacitance | Ciss | | 857 | 1200 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 |
| Output Capacitance | Coss | | 114 | 160 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 108 | 151 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 |
| Continuous Source Current | IS | | | -4.9 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM | | | -14 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | -20 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | TA=25℃ | 1 |
| Drain Current-Continuous | ID | | | -5 | A | TA=25℃ | 1 |
| Drain Current-Pulsed | IDM | | | -14 | A | TA=25℃, Note 1 | 1 |
| Maximum Power Dissipation | PD | | | 1.31 | W | TA=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 120 | ℃/W | Note 2 | 1 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | -0.014 | | V/℃ | Reference to 25℃ , ID=-1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | 3.95 | | mV/℃ | | 2 |
| Forward Transconductance | gfs | | 12.8 | | S | VDS=-5V , ID=-3A | 2 |
| Reverse Recovery Time | trr | | 21.8 | | nS | IF=-3A , di/dt=100A/µs , TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 6.9 | | nC | IF=-3A , di/dt=100A/µs , TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `SM2305SRL-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `sm2305srl-hxy-etched.step` / `sm2305srl-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm2305srl-hxy.step` / `sm2305srl-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/sm2305srl-hxy-datasheet.pdf) (6 pp, sha256 `5ffa32906ecce0e3`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sm2305srl-hxy-datasheet.pdf)