main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 13d ago
viewers sm2301srl-hxy: viewers · Ray 13d ago
package.json Publish 0.1.0 · Ray 13d ago
page.json Set visibility: public · Ray 13d ago
README.md Publish 0.1.0 · Ray 13d ago
sm2301srl-hxy-etched.glb Publish 0.1.0 · Ray 13d ago
sm2301srl-hxy-etched.step sm2301srl-hxy: factory component page (tier=lcsc) · Ray 13d ago
sm2301srl-hxy-hero.glb sm2301srl-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 13d ago
sm2301srl-hxy-hero.overlay.json Publish 0.1.0 · Ray 13d ago
sm2301srl-hxy.glb Publish 0.1.0 · Ray 13d ago
sm2301srl-hxy.kicad_mod Publish 0.1.0 · Ray 13d ago
sm2301srl-hxy.kicad_sym Publish 0.1.0 · Ray 13d ago
sm2301srl-hxy.lbr Publish 0.1.0 · Ray 13d ago
sm2301srl-hxy.step Publish 0.1.0 · Ray 13d ago

SM2301SRL-HXY

HXY MOSFET · MOSFETs · SOT-23

SM2301SRL-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±12 V and threshold of -0.4 V to -1 V at ID=-250 µA.
2 S passive Source of the P-channel MOSFET; body diode forward current IS up to -3 A.
3 D passive Drain; VDS rated -20 V with continuous drain current of -3 A and pulsed -10 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -20 -24 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) -0.4 -0.7 -1 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 60 80 mΩ VGS=-4.5V, ID=-3A 2
Drain-Source On-State Resistance RDS(ON) 85 103 mΩ VGS=-2.5V, ID=-2A 2
Forward Transconductance gFS 5 S VDS=-5V,ID=-2A 2
Total Gate Charge Qg 3.3 12 nC VDS=-10V,ID=-3A, VGS=-2.5V 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=1.3A 2
Diode Forward Current IS -3 A Note 2: surface mounted on FR4 board, t ≤ 10 sec 2
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID -3 A 1
Drain Current-Pulsed IDM -10 A Note 1: repetitive rating, pulse width limited by max junction temperature 1
Maximum Power Dissipation PD 1 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 125 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1

CAD (KiCad official)

  • Symbol: SM2301SRL-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sm2301srl-hxy-etched.step / sm2301srl-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm2301srl-hxy.step / sm2301srl-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 c41192dcf701c608, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF