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SL8N65CD
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Slkor SLKORMICRO Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SL8N65CD
Slkor SLKORMICRO Elec · MOSFETs · TO-252
SL8N65CD from Slkor SLKORMICRO Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with gate-source voltage rated ±30 V, threshold 2.5 to 4.5 V at 250 uA, and drive of 10 V for the rated RDS(on). |
| 2 | D | passive | Drain, the center lead (shortened) electrically common with the exposed tab; drain-source voltage rated 650 V and continuous current 8 A at TC = 25°C. |
| 3 | S | passive | Source; body diode runs source-to-drain with continuous forward current up to 8 A and forward voltage max 1.2 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0 V, ID = 250uA | 2 | ||
| Drain-Source Breakdown Voltage (TJ = 150℃) | BVDSS | 650 | V | VGS = 0 V, ID = 250uA, TJ = 150℃ | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 600 V, VGS = 0 V | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 550 | 600 | mΩ | VGS = 10 V, ID = 2.5 A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 8 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 24 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0 V, IS = 2.5A | 2 | ||
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Drain Current - Continuous | ID | 8 | A | TC = 25℃; drain current limited by maximum junction temperature | 1 | ||
| Drain Current - Continuous | ID | 4.8 | A | TC = 100℃ | 1 | ||
| Drain Current - Pulsed | IDM | 24 | A | Note 1 (repetitive rating: pulse width limited by maximum junction temperature) | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 156 | mJ | Note 2: L = 80mH, VDD = 80V, RG = 25Ω, Starting TJ = 25°C | 1 | ||
| Avalanche Current | IAR | 1.9 | A | Note 1 | 1 | ||
| Repetitive Avalanche Energy | EAR | 0.61 | mJ | Note 1 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 20 | V/ns | Note 3 | 1 | ||
| MOSFET dv/dt | dv/dt | 100 | V/ns | 1 | |||
| Power Dissipation (first printed value) | PD | 24 | W | TC = 25℃ | 1 | ||
| Power Dissipation (second printed value) | PD | 69 | W | TC = 25℃ | 1 | ||
| Derate above 25℃ (first printed value) | PD | 0.19 | W/℃ | Derate above 25℃ | 1 | ||
| Derate above 25℃ (second printed value) | PD | 0.56 | W/℃ | Derate above 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 260 | ℃ | 1/8" from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case (first printed value) | RθJC | 5.2 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Case (second printed value) | RθJC | 1.8 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient (first printed value) | RθJA | 62.5 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient (second printed value) | RθJA | 62.5 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SL8N65CD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sl8n65cd-etched.step/sl8n65cd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sl8n65cd.step/sl8n65cd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor SLKORMICRO Elec datasheet (8 pp, sha256
d5590205827a3d27, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SL8N65CD
**Slkor SLKORMICRO Elec** · MOSFETs · TO-252
SL8N65CD from Slkor SLKORMICRO Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with gate-source voltage rated ±30 V, threshold 2.5 to 4.5 V at 250 uA, and drive of 10 V for the rated RDS(on). |
| 2 | D | passive | Drain, the center lead (shortened) electrically common with the exposed tab; drain-source voltage rated 650 V and continuous current 8 A at TC = 25°C. |
| 3 | S | passive | Source; body diode runs source-to-drain with continuous forward current up to 8 A and forward voltage max 1.2 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS = 0 V, ID = 250uA | 2 |
| Drain-Source Breakdown Voltage (TJ = 150℃) | BVDSS | 650 | | | V | VGS = 0 V, ID = 250uA, TJ = 150℃ | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS = 600 V, VGS = 0 V | 2 |
| Gate-Body Leakage Current, Forward | IGSSF | | | 100 | nA | VGS = 30 V, VDS = 0 V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR | | | -100 | nA | VGS = -30 V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS(th) | 2.5 | | 4.5 | V | VDS = VGS, ID = 250uA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 550 | 600 | mΩ | VGS = 10 V, ID = 2.5 A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 8 | A | | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 24 | A | | 2 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS = 0 V, IS = 2.5A | 2 |
| Drain-Source Voltage | VDSS | | | 650 | V | | 1 |
| Drain Current - Continuous | ID | | | 8 | A | TC = 25℃; drain current limited by maximum junction temperature | 1 |
| Drain Current - Continuous | ID | | | 4.8 | A | TC = 100℃ | 1 |
| Drain Current - Pulsed | IDM | | | 24 | A | Note 1 (repetitive rating: pulse width limited by maximum junction temperature) | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 156 | mJ | Note 2: L = 80mH, VDD = 80V, RG = 25Ω, Starting TJ = 25°C | 1 |
| Avalanche Current | IAR | | | 1.9 | A | Note 1 | 1 |
| Repetitive Avalanche Energy | EAR | | | 0.61 | mJ | Note 1 | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 20 | V/ns | Note 3 | 1 |
| MOSFET dv/dt | dv/dt | | | 100 | V/ns | | 1 |
| Power Dissipation (first printed value) | PD | | | 24 | W | TC = 25℃ | 1 |
| Power Dissipation (second printed value) | PD | | | 69 | W | TC = 25℃ | 1 |
| Derate above 25℃ (first printed value) | PD | | | 0.19 | W/℃ | Derate above 25℃ | 1 |
| Derate above 25℃ (second printed value) | PD | | | 0.56 | W/℃ | Derate above 25℃ | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Maximum Lead Temperature for Soldering | TL | | | 260 | ℃ | 1/8" from case for 5 seconds | 1 |
| Thermal Resistance, Junction-to-Case (first printed value) | RθJC | | | 5.2 | ℃/W | | 1 |
| Thermal Resistance, Junction-to-Case (second printed value) | RθJC | | | 1.8 | ℃/W | | 1 |
| Thermal Resistance, Junction-to-Ambient (first printed value) | RθJA | | | 62.5 | ℃/W | | 1 |
| Thermal Resistance, Junction-to-Ambient (second printed value) | RθJA | | | 62.5 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `SL8N65CD`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sl8n65cd-etched.step` / `sl8n65cd-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sl8n65cd.step` / `sl8n65cd.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Slkor SLKORMICRO Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603061140209479680) (8 pp, sha256 `d5590205827a3d27`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sl8n65cd-datasheet.pdf)