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SL851D

Public Made by Adom

by adom

Slkor(SLKORMICRO Elec.) Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SL851D

Slkor(SLKORMICRO Elec.) · Transistor, Photovoltaic Output Optoisolators · DIP-4

SL851D from Slkor(SLKORMICRO Elec.), in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode input Anode of the input GaAs infrared LED; drive with a series resistor, absolute maximum forward current IF is 60 mA.
2 Cathode input Cathode of the input infrared LED; reverse voltage VR is limited to 6 V.
3 Emitter passive Emitter of the output phototransistor; emitter-collector voltage VECO is limited to 7 V.
4 Collector passive Collector of the output phototransistor; collector-emitter voltage VCEO is rated 350 V and collector current IC is 50 mA maximum.

Key specifications

Parameter Value
Manufacturer Slkor(SLKORMICRO Elec.)
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward current IF 60 mA Ta=25C 2
Reverse voltage VR 6 V Ta=25C 2
Input power dissipation PD 100 mW Ta=25C 2
Derating factor above Ta=100C PDD 2.9 mW/°C Above Ta = 100°C 2
Collector power dissipation PC 150 mW Ta=25C 2
Collector current IC 50 mA Ta=25C 2
Collector-emitter voltage VCEO 350 V Ta=25C 2
Emitter-collector voltage VECO 7 V Ta=25C 2
Total power dissipation Ptot 200 mW Ta=25C 2
Isolation voltage Viso 5000 Vrms Ta=25C 2
Operating temperature Topr -55 100 °C 2
Storage temperature Tstg -55 125 °C 2
Soldering temperature Tsol 260 °C 2
Thermal resistance junction-ambient RthJ-A 325 °C/W Input 2
Thermal resistance junction-case RthJ-C 200 °C/W Input 2
Forward voltage VF 1.2 1.4 V IF=10mA 2
Reverse current IR 10 µA VR=5V 2
Terminal capacitance Ct 30 250 pF V=0,f=1kHz 2
Collector dark current ICEO 100 nA VCE=200V 2
Collector-emitter breakdown voltage BVCEO 350 V IC=0.1mA, IF=0 2
Emitter-collector breakdown voltage BVECO 7 V IE=0.1mA, IF=0 2
Current transfer ratio CTR 50 600 % IF=5mA ,VCE=5V 2
Collector-emitter saturation voltage VCE(sat) 0.4 V IF=20mA,IC=1mA 2
Isolation capacitance Cf 0.6 pF V=0, f=1MHz 2
Cut-off frequency Fc 80 kHz VCE=5V, IC=2mA, RL=100Ω, -3dB 2
Rise time Tr 4 18 µs VCE=2V, IC=2mA, RL=100Ω 2
Fall time Tf 5 18 µs VCE=2V, IC=2mA, RL=100Ω 2

CAD (KiCad official)

  • Symbol: SL851D
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: sl851d-etched.step / sl851d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sl851d.step / sl851d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor(SLKORMICRO Elec.) datasheet (5 pp, sha256 0f93f31bc4a92f32, retrieved 2026-10-23, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF