component
SL80N03
Public Made by Adomby adom
Slkor(SLKORMICRO Elec.) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SL80N03
Slkor(SLKORMICRO Elec.) · MOSFETs · TO-252
SL80N03 from Slkor(SLKORMICRO Elec.), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.0 V min to 2.5 V max at ID=250 µA. |
| 2 | D | passive | Drain (center lead, electrically common with the exposed tab); VDS max 30 V, continuous ID 80 A, pulsed IDM 170 A. |
| 3 | S | passive | Source; maximum body-diode continuous current IS is 80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor(SLKORMICRO Elec.) |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | 30 | V | 1 | |||
| Gate-source Voltage | VGS | -20 | 20 | V | 1 | ||
| Pulsed Drain Current | IDM | 170 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 306 | mJ | 1 | |||
| Total Power Dissipation | PD | 83 | W | 1 | |||
| Thermal Resistance Junction-to-Case | RθJC | 1.74 | ℃/ W | 1 | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS= 0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS= VGS, ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 6.5 | mΩ | VGS= 10V, ID=30A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 10 | mΩ | VGS= 5V, ID=24A | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | IS=24A,VGS=0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 80 | A | 2 |
CAD (KiCad official)
- Symbol:
SL80N03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sl80n03-etched.step/sl80n03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sl80n03.step/sl80n03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor(SLKORMICRO Elec.) datasheet (5 pp, sha256
84c5b910eff96dfa, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SL80N03
**Slkor(SLKORMICRO Elec.)** · MOSFETs · TO-252
SL80N03 from Slkor(SLKORMICRO Elec.), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.0 V min to 2.5 V max at ID=250 µA. |
| 2 | D | passive | Drain (center lead, electrically common with the exposed tab); VDS max 30 V, continuous ID 80 A, pulsed IDM 170 A. |
| 3 | S | passive | Source; maximum body-diode continuous current IS is 80 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor(SLKORMICRO Elec.) |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | | | 30 | V | | 1 |
| Gate-source Voltage | VGS | -20 | | 20 | V | | 1 |
| Pulsed Drain Current | IDM | | | 170 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 306 | mJ | | 1 |
| Total Power Dissipation | PD | | | 83 | W | | 1 |
| Thermal Resistance Junction-to-Case | RθJC | | | 1.74 | ℃/ W | | 1 |
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS= 0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS= ±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 6.5 | mΩ | VGS= 10V, ID=30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 10 | mΩ | VGS= 5V, ID=24A | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | IS=24A,VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 80 | A | | 2 |
## CAD (KiCad official)
- Symbol: `SL80N03`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sl80n03-etched.step` / `sl80n03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sl80n03.step` / `sl80n03.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Slkor(SLKORMICRO Elec.) datasheet](docs/sl80n03-datasheet.pdf) (5 pp, sha256 `84c5b910eff96dfa`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sl80n03-datasheet.pdf)