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SL64N10

Public Made by Adom

by adom

Slkor(SLKORMICRO Elec.) MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SL64N10

Slkor(SLKORMICRO Elec.) · MOSFETs · TO-220-3L

SL64N10 from Slkor(SLKORMICRO Elec.), in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V maximum and threshold of 2 to 4 V at 250 uA.
2 D passive Drain; rated for VDSS 100 V and continuous current of 64 A at TC=25°C (122 A pulsed), also connected to the tab.
3 S passive Source; main current return terminal of the N-channel MOSFET, with body diode forward voltage of 1.1 V max at 10 A.

Key specifications

Parameter Value
Manufacturer Slkor(SLKORMICRO Elec.)
Package TO-220-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V TJ=25°C 1
Gate-Source Voltage VGSS -20 20 V TJ=25°C 1
Maximum Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Pulse Drain Current IDM 122 A Tested TC=25°C 1
Continuous Drain Current ID 64 A TC=25°C 1
Continuous Drain Current ID 41 A TC=100°C 1
Maximum Power Dissipation PD 83 W TC=25°C 1
Maximum Power Dissipation PD 33 W TC=100°C 1
Avalanche Current, Single pulse IAS 20 A L=0.1mH 1
Avalanche Energy, Single pulse EAS 20 mJ L=0.1mH 1
Thermal Resistance-Junction to Case RJC 1.5 °C/W Steady State 1
Thermal Resistance-Junction to Ambient RJA 62.5 °C/W Steady State; surface mounted on 1in2 FR-4 board with 1oz 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, IDS=250uA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=80V, VGS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, IDS=250uA 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 8.9 10.7 mΩ VGS=10V, IDS=20A 2
Drain-Source On-state Resistance RDS(ON) 12.5 16 mΩ VGS=6V, IDS=20A 2
Diode Forward Voltage VSD 0.8 1.1 V ISD=10A, VGS=0V 2
Forward Transconductance gfs 18.5 S VDS=5V, IDS=10A 2
Gate Resistance RG 0.9 Ω VGS=0V,VDS=0V, Freq.=1MHz 2
Input Capacitance Ciss 1558 pF VGS=0V, VDS=50V, Freq.=1MHz 2
Output Capacitance Coss 523 pF VGS=0V, VDS=50V, Freq.=1MHz 2
Reverse Transfer Capacitance Crss 55 pF VGS=0V, VDS=50V, Freq.=1MHz 2
Turn-on Delay Time td(ON) 10.4 nS VGS=10V,VDS=30V, ID=1A,RGEN=6Ω 2
Turn-on Rise Time tr 17.5 nS VGS=10V,VDS=30V, ID=1A,RGEN=6Ω 2
Turn-off Delay Time td(OFF) 26.5 nS VGS=10V,VDS=30V, ID=1A,RGEN=6Ω 2
Turn-off Fall Time tf 68.9 nS VGS=10V,VDS=30V, ID=1A,RGEN=6Ω 2
Total Gate Charge Qg 19.9 nC VGS=6V,VDS=50V, ID=20A 2
Total Gate Charge Qg 30.1 nC VGS=10V,VDS=50V, ID=20A 2
Gate-Source Charge Qgs 8.8 nC VGS=10V,VDS=50V, ID=20A 2
Gate-Drain Charge Qgd 8.8 nC VGS=10V,VDS=50V, ID=20A 2
Reverse Recovery Time trr 50.8 nS IF=10A, VR=50V, dlF/dt=100A/s 2
Reverse Recovery Charge Qrr 40 nC IF=10A, VR=50V, dlF/dt=100A/s 2

CAD (KiCad official)

  • Symbol: SL64N10
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: sl64n10-etched.step / sl64n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sl64n10.step / sl64n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor(SLKORMICRO Elec.) datasheet (4 pp, sha256 366e8e2573063e7e, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF