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SL4614

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Slkor SLKORMICRO Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SL4614

Slkor SLKORMICRO Elec · MOSFETs · SOP-8

SL4614 from Slkor SLKORMICRO Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive N-channel MOSFET source terminal; the N-channel rating is VDSS 40 V, VGSS ±20 V, and continuous ID 7.5 A at TA=25°C.
2 G1 input N-channel MOSFET gate terminal; VGSS is limited to ±20 V, and RDS(ON) is specified at VGS = 4.5 V and 10 V.
3 S2 passive P-channel MOSFET source terminal; the P-channel rating is VDSS -40 V, VGSS ±20 V, and continuous ID -5.5 A at TA=25°C.
4 G2 input P-channel MOSFET gate terminal; VGSS is limited to ±20 V, and RDS(ON) is specified at VGS = -4.5 V and -10 V.
5 D2 passive P-channel MOSFET drain terminal (internally tied to pin 6); the P-channel drain-source voltage rating is -40 V.
6 D2 passive P-channel MOSFET drain terminal (internally tied to pin 5); the P-channel drain-source voltage rating is -40 V.
7 D1 passive N-channel MOSFET drain terminal (internally tied to pin 8); the N-channel drain-source voltage rating is 40 V.
8 D1 passive N-channel MOSFET drain terminal (internally tied to pin 7); the N-channel drain-source voltage rating is 40 V.

Key specifications

Parameter Value
Manufacturer Slkor SLKORMICRO Elec
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N Channel) VDSS 40 V N Channel 2
Drain-Source Voltage (P Channel) VDSS -40 V P Channel 2
Gate-Source Voltage (N Channel) VGSS -20 20 V N Channel 2
Gate-Source Voltage (P Channel) VGSS -20 20 V P Channel 2
Maximum Junction Temperature TJ 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Diode Continuous Forward Current (N Channel) IS 2 A N Channel 2
Diode Continuous Forward Current (P Channel) IS -2 A P Channel 2
Pulse Drain Current (N Channel) IDP 30 A Tested VGS=10V(N) 2
Pulse Drain Current (P Channel) IDP -22 A Tested VGS=-10V(P) 2
Continuous Drain Current (N Channel) ID 7.5 A TA=25°C 2
Continuous Drain Current (N Channel) ID 6 A TA=70°C 2
Continuous Drain Current (P Channel) ID -5.5 A TA=25°C 2
Continuous Drain Current (P Channel) ID -4.5 A TA=70°C 2
Maximum Power Dissipation (N Channel) PD 2 W TA=25°C 2
Maximum Power Dissipation (N Channel) PD 1.3 W TA=70°C 2
Maximum Power Dissipation (P Channel) PD 2 W TA=25°C 2
Maximum Power Dissipation (P Channel) PD 1.3 W TA=70°C 2
Thermal Resistance Junction to Lead RθJL 50 °C/W Steady State 2
Thermal Resistance Junction to Ambient RθJA 62.5 °C/W t ≤ 10s 2
Thermal Resistance Junction to Ambient RθJA 110 °C/W Steady State 2
Avalanche Current (N Channel) IAS 10 A Single pulse L=0.5mH 2
Avalanche Current (P Channel) IAS 10 A Single pulse L=0.5mH 2
Avalanche Energy (N Channel) EAS 25 mJ Single pulse L=0.5mH 2
Avalanche Energy (P Channel) EAS 25 mJ Single pulse L=0.5mH 2
Drain-Source Breakdown Voltage (N Channel) BVDSS 40 V VGS=0V, IDS=250mA 3
Zero Gate Voltage Drain Current (N Channel) IDSS 1 mA VDS=32V, VGS=0V 3
Zero Gate Voltage Drain Current (N Channel) IDSS 30 mA TJ=85°C 3
Gate Threshold Voltage (N Channel) VGS(th) 1.5 2 2.5 V VDS=VGS, IDS=250mA 3
Gate Leakage Current (N Channel) IGSS -100 100 nA VGS=±20V, VDS=0V 3
Drain-Source On-state Resistance (N Channel) RDS(ON) 16 21 mW VGS=10V, IDS=6A 3
Drain-Source On-state Resistance (N Channel) RDS(ON) 18 25 mW VGS=4.5V, IDS=5A 3
Diode Forward Voltage (N Channel) VSD 0.75 1.1 V ISD=1A, VGS=0V 3
Total Gate Charge (N Channel) Qg 15.7 22 nC VDS=20V, VGS=10V, IDS=6A 3
Total Gate Charge (N Channel, second Qg row) Qg 7.5 10.5 nC 3
Drain-Source Breakdown Voltage (P Channel) BVDSS -40 V VGS=0V, IDS=-250mA 4
Zero Gate Voltage Drain Current (P Channel) IDSS -1 mA VDS=-32V, VGS=0V 4
Zero Gate Voltage Drain Current (P Channel) IDSS -30 mA TJ=85°C 4
Gate Threshold Voltage (P Channel) VGS(th) -1.5 -2 -2.5 V VDS=VGS, IDS=-250mA 4
Gate Leakage Current (P Channel) IGSS -100 100 nA VGS=±20V, VDS=0V 4
Drain-Source On-state Resistance (P Channel) RDS(ON) 30 38 mW VGS=-10V, IDS=-5.5A 4
Drain-Source On-state Resistance (P Channel) RDS(ON) 46 62 mW VGS=-4.5V, IDS=-3.5A 4
Diode Forward Voltage (P Channel) VSD -0.75 -1 V ISD=-1A, VGS=0V 4

CAD (KiCad official)

  • Symbol: SL4614
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: sl4614-etched.step / sl4614-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sl4614.step / sl4614.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor SLKORMICRO Elec datasheet (11 pp, sha256 ae8c60e3448477be, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF