component
SL4459A
Public Made by Adomby adom
Slkor(SLKORMICRO Elec.) MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SL4459A
Slkor(SLKORMICRO Elec.) · MOSFETs · SOP-8
SL4459A from Slkor(SLKORMICRO Elec.), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; pins 1-3 are source, with VDS rated -30 V and continuous drain current -6.5 A. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; diode continuous forward current is -6.5 A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET with VGS rated ±20 V and threshold of -1 V min to -3 V max at ID=-250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET, connected internally to pins 6-8; pulsed drain current is -30 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5-7; drain-source breakdown is -30 V min at ID=-250μA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor(SLKORMICRO Elec.) |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BV(BR)DSS | -30 | V | VGS=0V,ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 33 | 46 | mΩ | VGS=-10V, ID=-6.5A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 50 | 72 | mΩ | VGS=-4.5V,ID=-5A | 2 | |
| Forward on voltage | VSD | -0.8 | -1.2 | V | Tj=25℃,Is=-6.5A | 2 | |
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -50 | 155 | °C | 1 | ||
| Diode Continuous Forward Current | IS | -6.5 | A | Tc=25°C | 1 | ||
| Pulse Drain Current Tested | IDM | -30 | A | Tc=25°C | 1 | ||
| Continuous Drain Current | ID | -6.5 | A | Tc=25°C | 1 | ||
| Maximum Power Dissipation | PD | 3.1 | W | Tc=25°C | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 40 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SL4459A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
sl4459a-etched.step/sl4459a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sl4459a.step/sl4459a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor(SLKORMICRO Elec.) datasheet (4 pp, sha256
1d26190005527d6b, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SL4459A
**Slkor(SLKORMICRO Elec.)** · MOSFETs · SOP-8
SL4459A from Slkor(SLKORMICRO Elec.), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; pins 1-3 are source, with VDS rated -30 V and continuous drain current -6.5 A. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; diode continuous forward current is -6.5 A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET with VGS rated ±20 V and threshold of -1 V min to -3 V max at ID=-250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET, connected internally to pins 6-8; pulsed drain current is -30 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5-7; drain-source breakdown is -30 V min at ID=-250μA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor(SLKORMICRO Elec.) |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BV(BR)DSS | -30 | | | V | VGS=0V,ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 33 | 46 | mΩ | VGS=-10V, ID=-6.5A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 50 | 72 | mΩ | VGS=-4.5V,ID=-5A | 2 |
| Forward on voltage | VSD | | -0.8 | -1.2 | V | Tj=25℃,Is=-6.5A | 2 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain-Source Voltage | VDS | | | -30 | V | | 1 |
| Maximum Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -50 | | 155 | °C | | 1 |
| Diode Continuous Forward Current | IS | | | -6.5 | A | Tc=25°C | 1 |
| Pulse Drain Current Tested | IDM | | | -30 | A | Tc=25°C | 1 |
| Continuous Drain Current | ID | | | -6.5 | A | Tc=25°C | 1 |
| Maximum Power Dissipation | PD | | | 3.1 | W | Tc=25°C | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | 40 | | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `SL4459A`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `sl4459a-etched.step` / `sl4459a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sl4459a.step` / `sl4459a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Slkor(SLKORMICRO Elec.) datasheet](docs/sl4459a-datasheet.pdf) (4 pp, sha256 `1d26190005527d6b`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sl4459a-datasheet.pdf)