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SL4435A

Slkor SLKORMICRO Elec · MOSFETs · SOP-8

SL4435A from Slkor SLKORMICRO Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the -30V, -10A P-channel MOSFET; the absolute maximum VDS is -30V and VGS is ±25V.
2 S passive Source terminal of the -30V, -10A P-channel MOSFET; the absolute maximum VDS is -30V and VGS is ±25V.
3 S passive Source terminal of the -30V, -10A P-channel MOSFET; the absolute maximum VDS is -30V and VGS is ±25V.
4 G input Gate terminal of the MOSFET; the absolute maximum gate-source voltage is ±25V and the threshold is -1.0 to -3.0V.
5 D passive Drain terminal of the MOSFET; continuous drain current is -10A at TC=25°C with pulse drain current of -50A.
6 D passive Drain terminal of the MOSFET; continuous drain current is -10A at TC=25°C with pulse drain current of -50A.
7 D passive Drain terminal of the MOSFET; continuous drain current is -10A at TC=25°C with pulse drain current of -50A.
8 D passive Drain terminal of the MOSFET; continuous drain current is -10A at TC=25°C with pulse drain current of -50A.

Key specifications

Parameter Value
Manufacturer Slkor SLKORMICRO Elec
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BV(BR)DSS -30 V VGS=0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.5 -3 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 13 18 mΩ VGS=-10V, ID=-10A 2
Drain-Source On-State Resistance RDS(on) 20 30 mΩ VGS=-4.5V, ID=-8A 2
Forward on voltage VSD -0.8 -1.2 V Tj=25℃,Is=-10A 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -25 25 V 1
Maximum Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -50 155 °C 1
Diode Continuous Forward Current IS -10 A Tc=25°C 1
Pulse Drain Current Tested IDM -50 A Tc=25°C 1
Continuous Drain Current ID -10 A Tc=25°C 1
Thermal Resistance Junction-Ambient RθJA 42 °C/W 1

CAD (KiCad official)

  • Symbol: SL4435A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: sl4435a-etched.step / sl4435a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sl4435a.step / sl4435a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor SLKORMICRO Elec datasheet (4 pp, sha256 a92c499b6d8a4184, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF