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Contents

README

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SL4184

Slkor SLKORMICRO Elec · MOSFETs · TO-252

SL4184 from Slkor SLKORMICRO Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGSS), with threshold of 1.2 V min to 2 V max at 250 µA.
2 D passive Drain terminal (exposed tab, middle lead removed in the TO-252-2 package); drain-source voltage is rated 40 V with 60 A continuous drain current at TC=25°C.
3 S passive Source terminal of the N-channel MOSFET, with body diode continuous forward current rated 40 A.

Key specifications

Parameter Value
Manufacturer Slkor SLKORMICRO Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 40 V 2
Drain-Source Avalanche Voltage (Maximum) BVDS(Avalanche) 45 V Avalanche single pulse test, tav≤100μs, duty<1% 2
Gate-Source Voltage VGSS -20 20 V 2
Maximum Junction Temperature TJ 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Diode Continuous Forward Current IS 40 A 2
300μs Pulse Drain Current Tested IDP 160 A TC=25°C 2
300μs Pulse Drain Current Tested IDP 90 A TC=100°C 2
Continuous Drain Current ID 60 A TC=25°C; current limited by bond wire 2
Continuous Drain Current ID 48 A TC=100°C 2
Maximum Power Dissipation PD 60 W TC=25°C 2
Maximum Power Dissipation PD 30 W TC=100°C 2
Drain-Source Avalanche Energy EAS 100 mJ L=0.5mH 2
Thermal Resistance-Junction to Case RθJC 2.5 °C/W 2
Thermal Resistance-Junction to Ambient RθJA 50 °C/W 2
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, IDS=250μA 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS=32V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 30 μA TJ=85°C 3
Gate Threshold Voltage VGS(th) 1.2 1.6 2 V VDS=VGS, IDS=250μA 3
Gate Leakage Current IGSS 100 nA VGS=±20V, VDS=0V 3
Drain-Source On-state Resistance RDS(ON) 7.2 9 mΩ VGS=10V, IDS=20A 3
Drain-Source On-state Resistance RDS(ON) 9.2 13 mΩ VGS=4.5V, IDS=10A 3
Diode Forward Voltage VSD 0.8 1.1 V ISD=20A, VGS=0V 3
Turn-on Delay Time td(ON) 11 21 ns VDD=20V, RL=20Ω, IDS=1A, VGEN=10V, RG=6Ω 3
Turn-on Rise Time tr 13 24 ns VDD=20V, RL=20Ω, IDS=1A, VGEN=10V, RG=6Ω 3
Turn-off Delay Time td(OFF) 37 67 ns VDD=20V, RL=20Ω, IDS=1A, VGEN=10V, RG=6Ω 3
Turn-off Fall Time tf 11 21 ns VDD=20V, RL=20Ω, IDS=1A, VGEN=10V, RG=6Ω 3
Total Gate Charge Qg 31.2 44 nC VDS=20V, VGS=10V, IDS=40A 3

CAD (KiCad official)

  • Symbol: SL4184
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sl4184-etched.step / sl4184-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sl4184.step / sl4184.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor SLKORMICRO Elec datasheet (8 pp, sha256 b343c0943fa49e04, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF