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SL3906

Public Made by Adom

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Slkor SLKORMICRO Elec Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SL3906

Slkor SLKORMICRO Elec · Bipolar (BJT) · SOT-23

SL3906 from Slkor SLKORMICRO Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the PNP transistor; VEBO max is -6.0 Vdc and base cutoff current is max -50 nAdc at VCE=-30 Vdc, VEB=-3.0 Vdc.
2 EMITTER passive Emitter of the PNP transistor; emitter-base breakdown voltage V(BR)EBO is min -6.0 Vdc at IE=-10 µAdc.
3 COLLECTOR passive Collector of the PNP transistor; VCEO is -40 Vdc, VCBO is -40 Vdc and continuous collector current is -200 mAdc max.

Key specifications

Parameter Value
Manufacturer Slkor SLKORMICRO Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -40 Vdc 1
Collector-Base Voltage VCBO -40 Vdc 1
Emitter-Base Voltage VEBO -6 Vdc 1
Collector Current-Continuous Ic -200 mAdc 1
Total Device Dissipation, FR-5 Board PD 225 mW TA=25℃, FR-5 board 1
Total Device Dissipation, Alumina Substrate PD 300 mW TA=25℃, alumina substrate 1
Thermal Resistance Junction to Ambient RΘJA 417 ℃/W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Collector-Emitter Breakdown Voltage V(BR)CEO -40 Vdc Ic=-1.0mAdc, IB=0 2
Collector-Base Breakdown Voltage V(BR)CBO -40 Vdc Ic=-10μAdc, IE=0 2
Emitter-Base Breakdown Voltage V(BR)EBO -6 Vdc IE=-10μAdc, Ic=0 2
Base Cutoff Current IBEX -50 nAdc VCE=-30Vdc, VEB=-3.0 Vdc 2
Collector Cutoff Current ICEX -50 nAdc VCE=-30Vdc, VEB=-3.0Vdc 2
DC Current Gain hPE 40 Ic=-0.1mAdc, VCE=-1.0Vdc 2
DC Current Gain hPE 70 Ic=-1.0mAdc, VCE=-1.0Vdc 2
DC Current Gain hPE 100 300 Ic=-10mAdc, VCE=-1.0Vdc 2
DC Current Gain hPE 60 Ic=-50mAdc, VCE=-1.0Vdc 2
DC Current Gain hPE 30 Ic=-100mAdc, VCE=-1.0Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) -0.25 Vdc Ic=-10mAdc, IB=-1.0mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) -0.4 Vdc Ic=-50mAdc, IB=-5.0mAdc 2
Base-Emitter Saturation Voltage VBE(sat) -0.65 -0.85 Vdc Ic=-10mAdc, IB=-1.0mAdc 2
Base-Emitter Saturation Voltage VBE(sat) -0.95 Vdc Ic=-50mAdc, IB=-5.0mAdc 2
Current-Gain-Bandwidth Product fT 300 MHz Ic=-10mAdc, VCE=-20Vdc, f=100MHz 3
Output Capacitance Cobo 4 pF VCB=-5.0Vdc, IE=0, f=1.0MHz 3
Input Capacitance Cibo 8 pF VEB=-0.5Vdc, IC=0, f=1.0MHz 3
Input Impedance hie 1 10 kΩ VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz 3
Voltage Feedback Ratio hre 0.5 8 ×10-4 VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz 3
Small-Signal Current Gain hfe 100 400 VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz 3
Output Admittance hoe 1 40 μmhos VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz 3
Noise Figure NF 5 dB VCE=-5.0Vdc, IC=-100μAdc, Rs=1.0 kΩ, f=1.0KHz 3
Delay Time td 35 ns VCC=-3.0Vdc, VBE=-0.5Vdc, IC=-10mAdc, IB1=-1.0mAdc 3
Rise Time tr 35 ns 3
Storage Time ts 225 ns VCC=-3.0Vdc, IC=-10mAdc, IB1=IB2=-1.0mAdc 3
Fall Time tf 75 ns 3

CAD (KiCad official)

  • Symbol: SL3906
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sl3906-etched.step / sl3906-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sl3906.step / sl3906.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor SLKORMICRO Elec datasheet (4 pp, sha256 06b21b34ef850d87, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF