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SL3904T

Public Made by Adom

by adom

Slkor SLKORMICRO Elec Bipolar (BJT), SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SL3904T

Slkor SLKORMICRO Elec · Bipolar (BJT) · SOT-523

SL3904T from Slkor SLKORMICRO Elec, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the NPN switching transistor, with VEBO rated at 6 V maximum and base-emitter saturation VBE(sat) of 0.65 to 0.85 V at IC=10 mA, IB=1 mA.
2 Emitter passive Emitter terminal of the NPN transistor, with emitter-base breakdown voltage VEBO of 6 V and emitter cut-off current IEBO of 100 nA maximum at VEB=5 V.
3 Collector passive Collector terminal of the NPN transistor, rated for VCBO of 60 V, VCEO of 40 V, continuous collector current IC of 200 mA and collector power dissipation PC of 150 mW.

Key specifications

Parameter Value
Manufacturer Slkor SLKORMICRO Elec
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage VCBO 60 V Ic= 100 μA, IE= 0 2
Collector-emitter breakdown voltage VCEO 40 V Ic= 1 mA, IB= 0 2
Emitter-base breakdown voltage VEBO 6 V IE= 100μA, IC= 0 2
Collector-base cut-off current ICBO 100 nA VCB= 60 V, IE= 0 2
Collector cut-off current ICEX 50 nA VCE= 30 V, VEB(off)=3V 2
Emitter cut-off current IEBO 100 nA VEB= 5V, IC=0 2
Collector-emitter saturation voltage VCE(sat) 0.2 V IC=10 mA, IB=1mA 2
Collector-emitter saturation voltage VCE(sat) 0.3 V IC= 50 mA, IB= 5mA 2
Base-emitter saturation voltage VBE(sat) 0.65 0.85 V IC=10 mA, IB=1mA 2
Base-emitter saturation voltage VBE(sat) 0.95 V IC= 50 mA, IB= 5mA 2
DC current gain hFE(1) 40 VCE= 10V, IC= 0.1mA 2
DC current gain hFE(2) 70 VCE= 10V, IC= 1mA 2
DC current gain hFE(3) 100 300 VCE= 10V, IC= 10mA 2
DC current gain hFE(4) 60 VCE= 10V, IC= 50mA 2
Delay time td 35 nS VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA 2
Rise time tr 35 nS VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA 2
Storage time ts 200 nS VCC=3V, IC=10mA, IB1=IB2=1mA 2
Fall time tf 50 nS VCC=3V, IC=10mA, IB1=IB2=1mA 2
Collector output capacitance Cob 4 pF VCB= 5V, IE= 0, f=1MHz 2
Base input capacitance Cib 8 pF VEB=0.5V, IC=0, f=1MHz 2
Transition frequency fT 300 MHz VCE= 20V, IC= 10mA, f=100MHz 2
Collector-base voltage VCBO 60 V Ta = 25℃ 1
Collector-emitter voltage VCEO 40 V Ta = 25℃ 1
Emitter-base voltage VEBO 6 V Ta = 25℃ 1
Collector current, continuous IC 200 mA Ta = 25℃ 1
Collector power dissipation PC 150 mW Ta = 25℃ 1
Junction temperature TJ 150 ℃ Ta = 25℃ 1
Storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction to ambient RθJA 833 °C/W 1

CAD (KiCad official)

  • Symbol: SL3904T
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: sl3904t-etched.step / sl3904t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sl3904t.step / sl3904t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor SLKORMICRO Elec datasheet (4 pp, sha256 38b82265252eccf5, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF