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Ray Publish 0.1.0 6e49456 3h ago

SL25T120FL

Slkor(SLKORMICRO Elec.) · IGBT Transistors / Modules · TO-247

SL25T120FL from Slkor(SLKORMICRO Elec.), in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive pin, with maximum gate-emitter voltage VGES of ±20 V and threshold VGE(th) of 4.5 V to 6.5 V.
2 C passive Collector (also connected to the mounting tab, with the anti-parallel diode cathode); rated VCES 1200 V and 50 A at TC=25℃ (25 A at TC=100℃).
3 E passive Emitter (anti-parallel diode anode); diode forward current rated 25 A at TC=100℃.

Key specifications

Parameter Value
Manufacturer Slkor(SLKORMICRO Elec.)
Package TO-247
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage Vces 1200 V 1
Collector Current-continuous Ic 50 A Tc=25℃ 1
Collector Current-continuous Ic 25 A Tc=100℃ 1
Collector Current-pulse ICM 60 A 1
Diode forward current IF 25 A @ TC=100°C 1
Gate-Emitter Voltage VGES -20 20 V 1
Turn-off safe area 60 A 1
Power Dissipation PD 350 W TC=25℃ 1
Diode Forward Current 25 A TC=100℃ 1
Operating and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Maximum Lead Temperature for Soldering Purposes TL 300 ℃ 1
Collector-Emitter Breakdown Voltage BVCES 1200 V IC=500uA,VGE=0V 2
Zero Gate Voltage Collector Current ICES 0.2 mA VCE=1200V,VGE=0V,TC=25℃ 2
Zero Gate Voltage Collector Current ICES 2 mA TC=100℃ 2
Zero Gate Voltage Collector Current ICES 2.5 mA TC=150℃ 2
Gate-body leakage current, forward IGESF -100 nA VCE=0V,VGE=-20V 2
Gate-Emitter Threshold Voltage VGE(th) 4.5 6.5 V VCE=VGE,Ic=600uA 2
Collector-Emitter saturation Voltage VCESAT 1.75 2.5 V VGE=15V,IC=25A 2
Short Collector current Ic(sc) 160 A VGE=15V, VCE=600V, tsc<10us, Tc=25℃ 2
Input capacitance Cies 1600 2400 pF VCE=25V, VGE=0V, f=1.0MHZ 2
Output capacitance Coes 120 190 pF VCE=25V, VGE=0V, f=1.0MHZ 2
Reverse transfer capacitance Cres 80 130 pF VCE=25V, VGE=0V, f=1.0MHZ 2
Diode Forward Voltage VF 1.77 2.8 V VGE=0V,IF=25A 2
Thermal Resistance, Junction to Case Rth(j-c) 0.4 ℃/W 3
Thermal Resistance, Junction to Ambient Rth(j-A) 40 ℃/W 3

CAD (KiCad official)

  • Symbol: SL25T120FL
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: sl25t120fl-etched.step / sl25t120fl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sl25t120fl.step / sl25t120fl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor(SLKORMICRO Elec.) datasheet (9 pp, sha256 0a26c4ee9164aaf7, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF