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SL20N10

Public Made by Adom

by adom

Slkor SLKORMICRO Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 17d ago
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README.md Publish 0.1.0 · Ray 17d ago
sl20n10-etched.glb Publish 0.1.0 · Ray 17d ago
sl20n10-etched.step sl20n10: factory component page (tier=lcsc) · Ray 17d ago
sl20n10-hero.glb sl20n10: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
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sl20n10.glb Publish 0.1.0 · Ray 17d ago
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sl20n10.lbr sl20n10: factory component page (tier=lcsc) · Ray 17d ago
sl20n10.step Publish 0.1.0 · Ray 17d ago

SL20N10

Slkor SLKORMICRO Elec · MOSFETs · TO-252

SL20N10 from Slkor SLKORMICRO Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) of 1.0 to 2.5 V at ID=250 µA.
2 D passive Drain (middle lead, also connected to the exposed tab); VDS rated 100 V, continuous ID 20 A at Tc=25°C, pulsed IDM 75 A.
3 S passive Source; diode continuous forward current IS is rated 20 A, with body-diode VSD of 1.2 V maximum at Is=15 A.

Key specifications

Parameter Value
Manufacturer Slkor SLKORMICRO Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BV(BR)DSS 100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=100V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(on) 70 80 mΩ VGS=10V, ID=12A 2
Drain-Source On-State Resistance RDS(on) 80 95 mΩ VGS=4.5V, ID=10A 2
Forward on voltage VSD 1.2 V Tj=25℃, Is=15A 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Maximum Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -50 155 °C 1
Diode Continuous Forward Current IS 20 A 1
Pulse Drain Current IDM 75 A 1
Continuous Drain Current ID 20 A Tc=25°C 1
Maximum Power Dissipation PD 45 W Tc=25°C 1
Single Pulse Avalanche Energy EAS 15.3 mJ Single pulse 1

CAD (KiCad official)

  • Symbol: SL20N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sl20n10-etched.step / sl20n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sl20n10.step / sl20n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor SLKORMICRO Elec datasheet (4 pp, sha256 cea3a2f55cb7b7a1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF