main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 14d ago
viewers sl11n65cd: viewers · Ray 14d ago
package.json Publish 0.1.0 · Ray 14d ago
page.json Set visibility: public · Ray 14d ago
README.md Publish 0.1.0 · Ray 14d ago
sl11n65cd-etched.glb Publish 0.1.0 · Ray 14d ago
sl11n65cd-etched.step sl11n65cd: factory component page (tier=lcsc) · Ray 14d ago
sl11n65cd-hero.glb sl11n65cd: hero GLB from the etched model (keeps the MPN mark) · Ray 14d ago
sl11n65cd-hero.overlay.json Publish 0.1.0 · Ray 14d ago
sl11n65cd.glb Publish 0.1.0 · Ray 14d ago
sl11n65cd.kicad_mod Publish 0.1.0 · Ray 14d ago
sl11n65cd.kicad_sym Publish 0.1.0 · Ray 14d ago
sl11n65cd.lbr Publish 0.1.0 · Ray 14d ago
sl11n65cd.step Publish 0.1.0 · Ray 14d ago

SL11N65CD

Slkor(SLKORMICRO Elec.) · MOSFETs · TO-252

SL11N65CD from Slkor(SLKORMICRO Elec.), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±30 V (VGSS) with threshold of 2.5 V to 4.5 V at VDS = VGS, ID = 0.8 mA.
2 D passive Drain, the shortened centre lead which is also connected to the mounting tab; drain-source voltage is rated at 650 V with 11 A continuous drain current at TC = 25°C.
3 S passive Source, the right-hand lead carrying the body diode with continuous forward current up to 9.6 A and pulsed forward current up to 28.8 A.

Key specifications

Parameter Value
Manufacturer Slkor(SLKORMICRO Elec.)
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 1 mA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS = 600 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 2 uA VDS = 480 V, TC = 125℃ 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 2.5 4.5 V VDS = VGS, ID = 0.8mA 2
Static Drain-Source On-Resistance RDS(on) 318 380 mΩ VGS = 10 V, ID = 4.0 A 2
Maximum Continuous Drain-Source Diode Forward Current IS 9.6 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 28.8 A 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0 V, IS = 4.0A 2
Drain-Source Voltage VDSS 650 V TC = 25°C 1
Drain Current Continuous ID 11 A TC = 25℃ 1
Drain Current Continuous ID 7 A TC = 100℃ 1
Drain Current Pulsed IDM 28.8 A Note 1 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulsed Avalanche Energy EAS 246 mJ Note 2 1
Avalanche Current IAR 11 A Note 1 1
Repetitive Avalanche Energy EAR 6.25 mJ 1
Peak Diode Recovery dv/dt dv/dt 20 V/ns Note 3 1
MOSFET dv/dt dv/dt 100 V/ns 1
Power Dissipation PD 87 W TC = 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Maximum lead temperature for soldering TL 300 ℃ 1/8" from case for 5 seconds 1
Thermal Resistance, Junction-to-Case RθJC 1.43 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W 1
Gate resistance RG 1 Ω F=1MHZ 2
Input Capacitance Ciss 920 pF VDS = 25 V, VGS = 0 V, f =1MHz 2
Output Capacitance Coss 20 pF VDS = 25 V, VGS = 0 V, f =1MHz 2
Time Related Output Capacitance Co(tr) 239 pF VDS = 0V to 400 V, VGS = 0 V 2
Energy Related Output Capacitance Co(er) 30 pF VDS = 0V to 400 V, VGS = 0 V 2
Total Gate Charge Qg 15.5 nC VDS =400 V, ID = 4.0A, VGS = 10 V 2
Turn-On Delay Time td(on) 8 ns VDD = 400 V, ID = 4.0A, RG = 10 Ω 2
Turn-On Rise Time tr 13 ns VDD = 400 V, ID = 4.0A, RG = 10 Ω 2
Turn-Off Delay Time td(off) 30 ns VDD = 400 V, ID = 4.0A, RG = 10 Ω 2
Turn-Off Fall Time tf 8 ns VDD = 400 V, ID = 4.0A, RG = 10 Ω 2

CAD (KiCad official)

  • Symbol: SL11N65CD
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sl11n65cd-etched.step / sl11n65cd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sl11n65cd.step / sl11n65cd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor(SLKORMICRO Elec.) datasheet (7 pp, sha256 43a2e81f4d46e642, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF