component
SL11N65CD
Public Made by Adomby adom
Slkor(SLKORMICRO Elec.) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 14d ago |
| viewers | 14d ago |
| package.json | 14d ago |
| page.json | 14d ago |
| README.md | 14d ago |
| sl11n65cd-etched.glb | 14d ago |
| sl11n65cd-etched.step | 14d ago |
| sl11n65cd-hero.glb | 14d ago |
| sl11n65cd-hero.overlay.json | 14d ago |
| sl11n65cd.glb | 14d ago |
| sl11n65cd.kicad_mod | 14d ago |
| sl11n65cd.kicad_sym | 14d ago |
| sl11n65cd.lbr | 14d ago |
| sl11n65cd.step | 14d ago |
SL11N65CD
Slkor(SLKORMICRO Elec.) · MOSFETs · TO-252
SL11N65CD from Slkor(SLKORMICRO Elec.), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V (VGSS) with threshold of 2.5 V to 4.5 V at VDS = VGS, ID = 0.8 mA. |
| 2 | D | passive | Drain, the shortened centre lead which is also connected to the mounting tab; drain-source voltage is rated at 650 V with 11 A continuous drain current at TC = 25°C. |
| 3 | S | passive | Source, the right-hand lead carrying the body diode with continuous forward current up to 9.6 A and pulsed forward current up to 28.8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor(SLKORMICRO Elec.) |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0 V, ID = 1 mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 600 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 2 | uA | VDS = 480 V, TC = 125℃ | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 0.8mA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 318 | 380 | mΩ | VGS = 10 V, ID = 4.0 A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 9.6 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 28.8 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0 V, IS = 4.0A | 2 | ||
| Drain-Source Voltage | VDSS | 650 | V | TC = 25°C | 1 | ||
| Drain Current Continuous | ID | 11 | A | TC = 25℃ | 1 | ||
| Drain Current Continuous | ID | 7 | A | TC = 100℃ | 1 | ||
| Drain Current Pulsed | IDM | 28.8 | A | Note 1 | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 246 | mJ | Note 2 | 1 | ||
| Avalanche Current | IAR | 11 | A | Note 1 | 1 | ||
| Repetitive Avalanche Energy | EAR | 6.25 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 20 | V/ns | Note 3 | 1 | ||
| MOSFET dv/dt | dv/dt | 100 | V/ns | 1 | |||
| Power Dissipation | PD | 87 | W | TC = 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | ℃ | 1/8" from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.43 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Gate resistance | RG | 1 | Ω | F=1MHZ | 2 | ||
| Input Capacitance | Ciss | 920 | pF | VDS = 25 V, VGS = 0 V, f =1MHz | 2 | ||
| Output Capacitance | Coss | 20 | pF | VDS = 25 V, VGS = 0 V, f =1MHz | 2 | ||
| Time Related Output Capacitance | Co(tr) | 239 | pF | VDS = 0V to 400 V, VGS = 0 V | 2 | ||
| Energy Related Output Capacitance | Co(er) | 30 | pF | VDS = 0V to 400 V, VGS = 0 V | 2 | ||
| Total Gate Charge | Qg | 15.5 | nC | VDS =400 V, ID = 4.0A, VGS = 10 V | 2 | ||
| Turn-On Delay Time | td(on) | 8 | ns | VDD = 400 V, ID = 4.0A, RG = 10 Ω | 2 | ||
| Turn-On Rise Time | tr | 13 | ns | VDD = 400 V, ID = 4.0A, RG = 10 Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 30 | ns | VDD = 400 V, ID = 4.0A, RG = 10 Ω | 2 | ||
| Turn-Off Fall Time | tf | 8 | ns | VDD = 400 V, ID = 4.0A, RG = 10 Ω | 2 |
CAD (KiCad official)
- Symbol:
SL11N65CD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sl11n65cd-etched.step/sl11n65cd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sl11n65cd.step/sl11n65cd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor(SLKORMICRO Elec.) datasheet (7 pp, sha256
43a2e81f4d46e642, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).