component
SL102N10
Public Made by Adomby adom
Slkor(SLKORMICRO Elec.) MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 10d ago |
| viewers | 10d ago |
| package.json | 10d ago |
| page.json | 10d ago |
| README.md | 10d ago |
| sl102n10-etched.glb | 10d ago |
| sl102n10-etched.step | 10d ago |
| sl102n10-hero.glb | 10d ago |
| sl102n10-hero.overlay.json | 10d ago |
| sl102n10.glb | 10d ago |
| sl102n10.kicad_mod | 10d ago |
| sl102n10.kicad_sym | 10d ago |
| sl102n10.lbr | 10d ago |
| sl102n10.step | 10d ago |
SL102N10
Slkor(SLKORMICRO Elec.) · MOSFETs · TO-220-3L
SL102N10 from Slkor(SLKORMICRO Elec.), in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGSS rated ±20 V and threshold VGS(th) of 1 to 3 V. |
| 2 | D | passive | Drain; VDSS is 100 V and continuous drain current is 102 A at TC=25°C. |
| 3 | S | passive | Source; connects to the source of the N-channel MOSFET and the body diode anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor(SLKORMICRO Elec.) |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, IDS=250uA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=80V, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS=VGS, IDS=250uA | 2 |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 5.3 | 6.4 | mΩ | VGS=10V, IDS=20A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 7 | 9 | mΩ | VGS=4.5V, IDS=20A | 2 | |
| Diode Forward Voltage | VSD | 0.85 | 1.1 | V | ISD=20A, VGS=0V | 2 | |
| Drain-Source Voltage | VDSS | 100 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Pulse Drain Current | IDM | 122 | A | Tested TC=25°C | 1 | ||
| Continuous Drain Current | ID | 102 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 65 | A | TC=100°C | 1 | ||
| Maximum Power Dissipation | PD | 125 | W | TC=25°C | 1 | ||
| Maximum Power Dissipation | PD | 50 | W | TC=100°C | 1 | ||
| Avalanche Current, Single pulse | IAS | 18 | A | L=0.1mH | 1 | ||
| Avalanche Energy, Single pulse | EAS | 16 | mJ | L=0.1mH | 1 | ||
| Thermal Resistance-Junction to Case | RJC | 1 | °C/W | Steady State | 1 | ||
| Thermal Resistance-Junction to Ambient | RJA | 62.5 | °C/W | Steady State; surface mounted on 1in2 FR-4 board with 1oz | 1 |
CAD (KiCad official)
- Symbol:
SL102N10 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
sl102n10-etched.step/sl102n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sl102n10.step/sl102n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor(SLKORMICRO Elec.) datasheet (4 pp, sha256
0f005b6a401892b6, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).