component
SKG100N12T
Public Made by Adomby adom
Shikues MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SKG100N12T
Shikues · MOSFETs · TO-220
SKG100N12T from Shikues, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum VGS of ±20 V and threshold VGS(th) of 2 V min to 4 V max at 250 μA. |
| 2 | D | passive | Drain; maximum VDS of 120 V and continuous drain current ID of 100 A, also connected to the tab. |
| 3 | S | passive | Source; current return of the N-channel MOSFET, with RDS(ON) of 5.6 mΩ max at VGS=10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 120 | V | VGS = 0 V, IDS = 250 μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, IDS = 250 μA | 2 | |
| Drain Leakage Current | IDSS | 1 | μA | VDS = 96 V, VGS = 0 V | 2 | ||
| Drain Leakage Current | IDSS | 30 | μA | TJ = 85 ℃ | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20 V, VDS = 0 V | 2 | |
| On-State Resistance | RDS(ON)a | 4.5 | 5.6 | mΩ | VGS = 10 V, IDS = 2A | 2 | |
| On-State Resistance | RDS(ON)a | 6 | 8 | mΩ | VGS = 6 V, IDS = 2 A | 2 | |
| Diode Forward Voltage | VSD | 0.7 | 1.3 | V | ISD = 0.5 A, VGS = 0 V | 2 | |
| Drain-Source Voltage | VDS | 120 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current - Continues | ID | 100 | A | TC=25℃ | 1 |
CAD (KiCad official)
- Symbol:
SKG100N12T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
skg100n12t-etched.step/skg100n12t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);skg100n12t.step/skg100n12t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (3 pp, sha256
aba4b7499097738e, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SKG100N12T
**Shikues** · MOSFETs · TO-220
SKG100N12T from Shikues, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum VGS of ±20 V and threshold VGS(th) of 2 V min to 4 V max at 250 μA. |
| 2 | D | passive | Drain; maximum VDS of 120 V and continuous drain current ID of 100 A, also connected to the tab. |
| 3 | S | passive | Source; current return of the N-channel MOSFET, with RDS(ON) of 5.6 mΩ max at VGS=10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 120 | | | V | VGS = 0 V, IDS = 250 μA | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, IDS = 250 μA | 2 |
| Drain Leakage Current | IDSS | | | 1 | μA | VDS = 96 V, VGS = 0 V | 2 |
| Drain Leakage Current | IDSS | | | 30 | μA | TJ = 85 ℃ | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±20 V, VDS = 0 V | 2 |
| On-State Resistance | RDS(ON)a | | 4.5 | 5.6 | mΩ | VGS = 10 V, IDS = 2A | 2 |
| On-State Resistance | RDS(ON)a | | 6 | 8 | mΩ | VGS = 6 V, IDS = 2 A | 2 |
| Diode Forward Voltage | VSD | | 0.7 | 1.3 | V | ISD = 0.5 A, VGS = 0 V | 2 |
| Drain-Source Voltage | VDS | | | 120 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ | 1 |
| Drain Current - Continues | ID | | | 100 | A | TC=25℃ | 1 |
## CAD (KiCad official)
- Symbol: `SKG100N12T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `skg100n12t-etched.step` / `skg100n12t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `skg100n12t.step` / `skg100n12t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shikues datasheet](docs/skg100n12t-datasheet.pdf) (3 pp, sha256 `aba4b7499097738e`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/skg100n12t-datasheet.pdf)