component
SK8205DM
Public Made by Adomby adom
Shikues MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SK8205DM
Shikues · MOSFETs · SOT-23-6
SK8205DM from Shikues, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of N-channel MOSFET 1; gate-source voltage limited to ±5 V. |
| 2 | S2 | passive | Source of N-channel MOSFET 2; VDS rated 20 V and ID 6 A. |
| 3 | G2 | input | Gate of N-channel MOSFET 2; gate-source voltage limited to ±5 V. |
| 4 | D2 | passive | Drain of N-channel MOSFET 2; drain-source voltage 20 V max, continuous drain current 6 A. |
| 5 | S1 | passive | Source of N-channel MOSFET 1; VDS rated 20 V and ID 6 A. |
| 6 | D1 | passive | Drain of N-channel MOSFET 1; drain-source voltage 20 V max, continuous drain current 6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS =0V, ID =250µA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 25 | mΩ | VGS =4.5V, ID =1A | 2 | ||
| Gate Threshold Voltage | VGS (th) | 0.5 | 1.2 | V | VDS =VGS, ID =250µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS =16V, VGS =0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VDS =0V, VGS =12V | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | TA=25°C unless otherwise noted | 1 | ||
| Continuous Drain Current | ID | 6 | A | TA=25°C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -5 | 5 | V | TA=25°C unless otherwise noted | 1 | |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
SK8205DM - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
sk8205dm-etched.step/sk8205dm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sk8205dm.step/sk8205dm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (3 pp, sha256
0c4693f533ad7b39, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SK8205DM
**Shikues** · MOSFETs · SOT-23-6
SK8205DM from Shikues, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of N-channel MOSFET 1; gate-source voltage limited to ±5 V. |
| 2 | S2 | passive | Source of N-channel MOSFET 2; VDS rated 20 V and ID 6 A. |
| 3 | G2 | input | Gate of N-channel MOSFET 2; gate-source voltage limited to ±5 V. |
| 4 | D2 | passive | Drain of N-channel MOSFET 2; drain-source voltage 20 V max, continuous drain current 6 A. |
| 5 | S1 | passive | Source of N-channel MOSFET 1; VDS rated 20 V and ID 6 A. |
| 6 | D1 | passive | Drain of N-channel MOSFET 1; drain-source voltage 20 V max, continuous drain current 6 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | VGS =0V, ID =250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 25 | mΩ | VGS =4.5V, ID =1A | 2 |
| Gate Threshold Voltage | VGS (th) | 0.5 | | 1.2 | V | VDS =VGS, ID =250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS =16V, VGS =0V | 2 |
| Gate-Body Leakage Current | IGSS | | | 100 | nA | VDS =0V, VGS =12V | 2 |
| Drain-Source Voltage | VDS | | | 20 | V | TA=25°C unless otherwise noted | 1 |
| Continuous Drain Current | ID | | | 6 | A | TA=25°C unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -5 | | 5 | V | TA=25°C unless otherwise noted | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `SK8205DM`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `sk8205dm-etched.step` / `sk8205dm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sk8205dm.step` / `sk8205dm.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shikues datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603356854109937664) (3 pp, sha256 `0c4693f533ad7b39`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sk8205dm-datasheet.pdf)