component
SK335N
Public Made by Adomby adom
Shikues MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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sk335n: specified limits as data (metadata.characteristics, 10 rows from the datasheet)
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SK335N
Shikues · MOSFETs · SOT-23
SK335N from Shikues, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet gives VGS max ±8 V, gate threshold 0.4 V to 1.3 V at VGS=VDS, ID=250µA, and gate leakage of ±100 nA max. |
| 2 | S | passive | Source; the datasheet lists the maximum continuous drain current as 2.0 A, and the body diode forward voltage as 1.2 V max at IS=0.94A. |
| 3 | D | passive | Drain; the datasheet gives a maximum drain-source voltage of 20 V and RDS(ON) of 80 mΩ max at VGS=4.5 V (90 mΩ max at 2.5 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250µA | 1 | ||
| Zero-Gate Voltage Drain Current | IDSS | 1 | µA | VDS=12V, VGS=0V | 1 | ||
| Gate Body Leakage Current, Forward | IGSSF | 100 | nA | VGS=8V, VDS=0V | 1 | ||
| Gate Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS=-8V, VDS=0V | 1 | ||
| Gate Threshold Voltage | VGS(th) | 0.4 | 1.3 | V | VGS= VDS, ID=250µA | 1 | |
| Static Drain-source On-Resistance | RDS(ON) | 70 | 80 | mΩ | VGS =4.5V, ID =3.6A | 1 | |
| Static Drain-source On-Resistance | RDS(ON) | 75 | 90 | mΩ | VGS =2.5V, ID =3.1A | 1 | |
| Drain-Source Voltage | VDS | 20 | V | TA=25℃ unless otherwise noted; printed in a single 'Limit' column | 1 | ||
| Gate-Source Voltage | VGS | -8 | 8 | V | TA=25℃ unless otherwise noted; printed as ±8 | 1 | |
| Drain Current-Continuous | ID | 2 | A | TA=25℃ unless otherwise noted; printed in a single 'Limit' column | 1 |
CAD (KiCad official)
- Symbol:
SK335N - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sk335n-etched.step/sk335n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sk335n.step/sk335n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (4 pp, sha256
9de2c6929c6654b3, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SK335N
**Shikues** · MOSFETs · SOT-23
SK335N from Shikues, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet gives VGS max ±8 V, gate threshold 0.4 V to 1.3 V at VGS=VDS, ID=250µA, and gate leakage of ±100 nA max. |
| 2 | S | passive | Source; the datasheet lists the maximum continuous drain current as 2.0 A, and the body diode forward voltage as 1.2 V max at IS=0.94A. |
| 3 | D | passive | Drain; the datasheet gives a maximum drain-source voltage of 20 V and RDS(ON) of 80 mΩ max at VGS=4.5 V (90 mΩ max at 2.5 V). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 20 | | | V | VGS=0V, ID=250µA | 1 |
| Zero-Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=12V, VGS=0V | 1 |
| Gate Body Leakage Current, Forward | IGSSF | | | 100 | nA | VGS=8V, VDS=0V | 1 |
| Gate Body Leakage Current, Reverse | IGSSR | | | -100 | nA | VGS=-8V, VDS=0V | 1 |
| Gate Threshold Voltage | VGS(th) | 0.4 | | 1.3 | V | VGS= VDS, ID=250µA | 1 |
| Static Drain-source On-Resistance | RDS(ON) | | 70 | 80 | mΩ | VGS =4.5V, ID =3.6A | 1 |
| Static Drain-source On-Resistance | RDS(ON) | | 75 | 90 | mΩ | VGS =2.5V, ID =3.1A | 1 |
| Drain-Source Voltage | VDS | | | 20 | V | TA=25℃ unless otherwise noted; printed in a single 'Limit' column | 1 |
| Gate-Source Voltage | VGS | -8 | | 8 | V | TA=25℃ unless otherwise noted; printed as ±8 | 1 |
| Drain Current-Continuous | ID | | | 2 | A | TA=25℃ unless otherwise noted; printed in a single 'Limit' column | 1 |
## CAD (KiCad official)
- Symbol: `SK335N`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `sk335n-etched.step` / `sk335n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sk335n.step` / `sk335n.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shikues datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757071167112912896) (4 pp, sha256 `9de2c6929c6654b3`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sk335n-datasheet.pdf)