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SK30P10

Public Made by Adom

by adom

Shikues MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SK30P10

Shikues · MOSFETs · TO-252

SK30P10 from Shikues, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of -1.2 V min to -2.5 V max at ID=-250μA.
2 D passive Drain; drain-source voltage limit is -100 V, continuous drain current -30 A and pulsed drain current -150 A.
3 S passive Source; body diode forward current IS is -30 A max, with VSD of -1.2 V max at IS=-1A.

Key specifications

Parameter Value
Manufacturer Shikues
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -30 A TC=25℃ 1
Drain Current-Continuous ID (100℃) -21 A TC=100℃ 1
Pulsed Drain Current IDM -150 A 1
Maximum Power Dissipation PD 120 W TC=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -50 155 ℃ 1
Thermal Resistance, Junction-to-Case RθJc 1.25 ℃/W Note 2 1
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V ID=-250μA 2
Gate-Body Leakage Current IGSS -100 100 μA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.8 -2.5 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 50 mΩ VGS=-10V, ID=-10A 2
Drain-Source On-State Resistance RDS(ON) 55 mΩ VGS=-4.5V, ID=-8A 2
Forward Transconductance gFS 5 S VDS=-50V,ID=-10A 2
Input Capacitance Clss 5500 PF 2
Output Capacitance Coss 225 PF 2
Reverse Transfer Capacitance Crss 130 PF VDS=-25V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 17 nS 2
Turn-on Rise Time tr 80 nS 2
Turn-Off Delay Time td(off) 45 nS 2
Turn-Off Fall Time tf 65 nS VDD=-50V,ID=-15A VGS=-10V,RGEN=9.1Ω 2
Total Gate Charge Qg 136 nC 2
Gate-Source Charge Qgs 22 nC 2
Gate-Drain Charge Qgd 26 nC VDS=-50V,ID=-15A, VGS=-10V 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-1A 2
Diode Forward Current IS -30 A 2
Reverse Recovery Time trr 90 nS 2
Reverse Recovery Charge Qrr 70 nC TJ = 25°C, IF =-15A di/dt = 100A/μs(Note3) 2

CAD (KiCad official)

  • Symbol: SK30P10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sk30p10-etched.step / sk30p10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sk30p10.step / sk30p10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shikues datasheet (6 pp, sha256 3c457764086c85f3, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF