component
SK1010B
Public Made by Adomby adom
MDD（Microdiode Electronics） Schottky Barrier Diodes (SBD), SMB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SK1010B
MDD（Microdiode Electronics） · Schottky Barrier Diodes (SBD) · SMB
SK1010B from MDD（Microdiode Electronics）, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode end, marked by the color band on the DO-214AA/SMB body; the SK1010B blocks up to 100 V DC (VRRM 100 V) and conducts up to 10.0 A average forward current. |
| 2 | A | passive | Anode terminal at the end opposite the color band of the DO-214AA/SMB body; forward voltage is 0.85 V maximum at 10.0 A for the SK1010B. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MDD（Microdiode Electronics） |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum instantaneous forward voltage | VF | 0.85 | V | at 10.0A | 1 | ||
| Maximum DC reverse current | IR | 1 | mA | TA=25℃ at rated DC blocking voltage | 1 | ||
| Maximum DC reverse current | IR | 20 | mA | TA=100℃ at rated DC blocking voltage | 1 | ||
| Typical junction capacitance | CJ | 500 | pF | Measured at 1MHz and applied reverse voltage of 4.0V D.C. | 1 | ||
| Maximum repetitive peak reverse voltage | VRRM | 100 | V | 1 | |||
| Maximum RMS voltage | VRMS | 70 | V | 1 | |||
| Maximum DC blocking voltage | VDC | 100 | V | 1 | |||
| Maximum average forward rectified current | I(AV) | 10 | A | at TL (see fig.1) | 1 | ||
| Peak forward surge current | IFSM | 150 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | 1 | ||
| Operating junction temperature range | TJ | -50 | 125 | ℃ | 1 | ||
| Storage temperature range | TSTG | -50 | 150 | ℃ | 1 | ||
| Typical thermal resistance | RθJA | 18 | ℃/W | P.C.B. mounted with 0.2x0.2" (5.0x5.0mm) copper pad areas | 1 |
CAD (KiCad official)
- Symbol:
SK1010B - Footprint:
Diode_SMD:D_SMB - 3D model: SMB (KiCad packages3D, STEP)
- 3D model files:
sk1010b-etched.step/sk1010b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sk1010b.step/sk1010b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MDD（Microdiode Electronics） datasheet (4 pp, sha256
0492e1e7e97f36a0, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SK1010B
**MDD（Microdiode Electronics）** · Schottky Barrier Diodes (SBD) · SMB
SK1010B from MDD（Microdiode Electronics）, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode end, marked by the color band on the DO-214AA/SMB body; the SK1010B blocks up to 100 V DC (VRRM 100 V) and conducts up to 10.0 A average forward current. |
| 2 | A | passive | Anode terminal at the end opposite the color band of the DO-214AA/SMB body; forward voltage is 0.85 V maximum at 10.0 A for the SK1010B. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MDD（Microdiode Electronics） |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum instantaneous forward voltage | VF | | | 0.85 | V | at 10.0A | 1 |
| Maximum DC reverse current | IR | | | 1 | mA | TA=25℃ at rated DC blocking voltage | 1 |
| Maximum DC reverse current | IR | | | 20 | mA | TA=100℃ at rated DC blocking voltage | 1 |
| Typical junction capacitance | CJ | | 500 | | pF | Measured at 1MHz and applied reverse voltage of 4.0V D.C. | 1 |
| Maximum repetitive peak reverse voltage | VRRM | | | 100 | V | | 1 |
| Maximum RMS voltage | VRMS | | | 70 | V | | 1 |
| Maximum DC blocking voltage | VDC | | | 100 | V | | 1 |
| Maximum average forward rectified current | I(AV) | | | 10 | A | at TL (see fig.1) | 1 |
| Peak forward surge current | IFSM | | | 150 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | 1 |
| Operating junction temperature range | TJ | -50 | | 125 | ℃ | | 1 |
| Storage temperature range | TSTG | -50 | | 150 | ℃ | | 1 |
| Typical thermal resistance | RθJA | | 18 | | ℃/W | P.C.B. mounted with 0.2x0.2" (5.0x5.0mm) copper pad areas | 1 |
## CAD (KiCad official)
- Symbol: `SK1010B`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB (KiCad packages3D, STEP)
- 3D model files: `sk1010b-etched.step` / `sk1010b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sk1010b.step` / `sk1010b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MDD（Microdiode Electronics） datasheet](docs/sk1010b-datasheet.pdf) (4 pp, sha256 `0492e1e7e97f36a0`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sk1010b-datasheet.pdf)