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SIR836DP-T1-GE3-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SIR836DP-T1-GE3-VB

VBsemi Elec · MOSFETs · DFN5x6-8

SIR836DP-T1-GE3-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, pin 1 marked with a dot; VDS rating 40 V.
2 S passive Source of the N-channel MOSFET, tied to the source net; 70 A continuous drain current at TC = 25 °C (package limit 80 A).
3 S passive Source of the N-channel MOSFET, tied to the source net; body diode continuous current 70 A at TC = 25 °C.
4 G input Gate input of the MOSFET; gate-source voltage limit ±20 V, threshold 1.2 to 2.5 V.
5 D passive Drain of the N-channel MOSFET; VDS 40 V maximum, pulsed drain current 120 A.
6 D passive Drain of the N-channel MOSFET, tied to the drain net; RDS(on) 0.0050 ohm at VGS = 10 V.
7 D passive Drain of the N-channel MOSFET, tied to the drain net; RDS(on) 0.0060 ohm at VGS = 4.5 V.
8 D passive Drain of the N-channel MOSFET, tied to the drain net; maximum junction temperature 175 °C.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 40 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1.2 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 40 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 70 A VDS ≥ 5 V, VGS = 10 V 2
Gate Resistance Rg 1.4 2.1 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 18 27 ns VDD = 15 V, RL = 0.555 Ω, ID ≅ 27 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 11 17 ns VDD = 15 V, RL = 0.555 Ω, ID ≅ 27 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 70 105 ns VDD = 15 V, RL = 0.555 Ω, ID ≅ 27 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = 15 V, RL = 0.555 Ω, ID ≅ 27 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 55 83 ns VDD = 15 V, RL = 0.625 Ω, ID ≅ 24 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 180 270 ns VDD = 15 V, RL = 0.625 Ω, ID ≅ 24 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 55 83 ns VDD = 15 V, RL = 0.625 Ω, ID ≅ 24 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 12 18 ns VDD = 15 V, RL = 0.625 Ω, ID ≅ 24 A, VGEN = 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 70 A TC = 25 °C 2
Pulse Diode Forward Current ISM 100 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 22 A 2
Body Diode Reverse Recovery Time trr 52 78 ns IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 70.2 105 nC IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source Voltage VDS 40 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID 70 A TJ = 175 °C, TC = 25 °C 1
Continuous Drain Current ID 60 A TJ = 175 °C, TC = 70 °C 1
Continuous Drain Current ID 19 A TJ = 175 °C, TA = 25 °C 1
Continuous Drain Current ID 18.6 A TJ = 175 °C, TA = 70 °C 1
Pulsed Drain Current IDM 120 A 1
Single Pulse Avalanche Energy EAS 47.2 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 100 W TC = 25 °C 1
Maximum Power Dissipation PD 55 W TC = 70 °C 1
Maximum Power Dissipation PD 6.15 W TA = 25 °C 1
Maximum Power Dissipation PD 3.07 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 47 56 °C/W t ≤ 10 s 1
Junction-to-Case Thermal Resistance RthJC 0.8 1.1 °C/W Steady State 1
Drain-Source On-State Resistance RDS(on) 0.006 Ω VGS = 4.5 V, ID = 29 A 2
Forward Transconductance gfs 110 S VDS = 15 V, ID = 32 A 2
Total Gate Charge Qg 67 nC VDS = 15 V, VGS = 10 V, ID = 32 A 2
VDS Temperature Coefficient ΔVDS/TJ 35 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -5.5 mV/°C ID = 250 µA 2

CAD (KiCad official)

  • Symbol: SIR836DP-T1-GE3-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: sir836dp-t1-ge3-vb-etched.step / sir836dp-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sir836dp-t1-ge3-vb.step / sir836dp-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 c3b4d328e8f507ee, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF