component
SIR462DP-T1-GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSIR462DP-T1-GE3-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
SIR462DP-T1-GE3-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal (Pin 1), the source of the N-channel MOSFET; the body diode conducts source current up to IS 58A continuous. |
| 2 | S | passive | Source terminal, the source of the N-channel MOSFET; the body diode conducts source current up to IS 58A continuous. |
| 3 | S | passive | Source terminal, the source of the N-channel MOSFET; the body diode conducts source current up to IS 58A continuous. |
| 4 | G | input | Gate terminal that controls the channel; the gate-source voltage is limited to ±20V, and the device operates with gate voltages as low as 4.5V. |
| 5 | D | passive | Drain terminal, rated for a 30V drain-source voltage and 60A continuous drain current at TC=25°C. |
| 6 | D | passive | Drain terminal, rated for a 30V drain-source voltage and 60A continuous drain current at TC=25°C. |
| 7 | D | passive | Drain terminal, rated for a 30V drain-source voltage and 60A continuous drain current at TC=25°C. |
| 8 | D | passive | Drain terminal, rated for a 30V drain-source voltage and 60A continuous drain current at TC=25°C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
SIR462DP-T1-GE3-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
sir462dp-t1-ge3-hxy-etched.step/sir462dp-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sir462dp-t1-ge3-hxy.step/sir462dp-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
282b3518b6470ea4, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).