component
SIR424DP-T1-GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSIR424DP-T1-GE3-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
SIR424DP-T1-GE3-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, one of three source pins (pins 1-3) of the DFN5X6-8L package. |
| 2 | S | passive | Source of the N-channel MOSFET, one of three source pins (pins 1-3) of the DFN5X6-8L package. |
| 3 | S | passive | Source of the N-channel MOSFET, one of three source pins (pins 1-3) of the DFN5X6-8L package. |
| 4 | G | input | Gate of the N-channel MOSFET, with VGS rated ±12 V and a threshold of 0.4 V min to 1.1 V max at ID=250μA. |
| 5 | D | passive | Drain of the N-channel MOSFET, one of four drain pins (pins 5-8), with VDS rated 20 V and ID 60 A at TC=25℃. |
| 6 | D | passive | Drain of the N-channel MOSFET, one of four drain pins (pins 5-8), with VDS rated 20 V and ID 60 A at TC=25℃. |
| 7 | D | passive | Drain of the N-channel MOSFET, one of four drain pins (pins 5-8), with VDS rated 20 V and ID 60 A at TC=25℃. |
| 8 | D | passive | Drain of the N-channel MOSFET, one of four drain pins (pins 5-8), with VDS rated 20 V and ID 60 A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1.1 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 3.5 | 5 | mΩ | VGS=4.5V, ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 6.5 | 9 | mΩ | VGS=2.5V, ID=20A | 2 | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 300 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS=30A | 2 | ||
| Maximum Continuous Drain to Source Diode Forward Current | IS | 60 | A | 2 | |||
| Drain-Source Voltage | VDS | 20 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID@TC=25℃ | 60 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=70℃ | 43 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 58 | mJ | TC=25℃ | 1 | ||
| Avalanche Current | IAS | 41 | A | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 58 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.6 | ℃/W | 1 | |||
| Input Capacitance | Ciss | 2500 | pF | VDS=10V, VGS=0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 407 | pF | VDS=10V, VGS=0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 386 | pF | VDS=10V, VGS=0V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 32 | nC | VDS=10V, ID=30A, VGS=4.5V | 2 | ||
| Gate-Source Charge | Qgs | 3 | nC | VDS=10V, ID=30A, VGS=4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 11 | nC | VDS=10V, ID=30A, VGS=4.5V | 2 | ||
| Turn-on Delay Time | td(on) | 17 | ns | VDS=10V, ID=30A, RGEN=3Ω, VGS=4.5V | 2 | ||
| Turn-on Rise Time | tr | 49 | ns | VDS=10V, ID=30A, RGEN=3Ω, VGS=4.5V | 2 | ||
| Turn-off Delay Time | td(off) | 74 | ns | VDS=10V, ID=30A, RGEN=3Ω, VGS=4.5V | 2 | ||
| Turn-off Fall Time | tf | 26 | ns | VDS=10V, ID=30A, RGEN=3Ω, VGS=4.5V | 2 |
CAD (KiCad official)
- Symbol:
SIR424DP-T1-GE3-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
sir424dp-t1-ge3-hxy-etched.step/sir424dp-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sir424dp-t1-ge3-hxy.step/sir424dp-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
049f7232df2d1721, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).