component
SIL2308-TP
Public Made by Adomby adom
MCC Micro Commercial Components MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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sil2308-tp: specified limits as data (metadata.characteristics, 46 rows from the datasheet)
2 files changed
+613−1
README.md+53@@ -24,6 +24,59 @@ SIL2308-TP from MCC Micro Commercial Components, in a SOT-23-6L. Pinout and pin | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N-channel) | VDS | | | 20 | V | | 1 |+| Drain-Source Voltage (P-channel) | VDS | | | -20 | V | | 1 |+| Gate-Source Voltage (N-channel) | VGS | | | 12 | V | | 1 |+| Gate-Source Voltage (P-channel) | VGS | | | 8 | V | | 1 |+| Continuous Drain Current (N-channel) | ID | | | 5 | A | | 1 |+| Continuous Drain Current (P-channel) | ID | | | -4 | A | | 1 |+| Operating Junction Temperature Range | | -55 | | 150 | °C | | 1 |+| Storage Temperature Range | | -55 | | 150 | °C | | 1 |+| Maximum Thermal Resistance, Junction to Ambient | | | | 119 | °C/W | Junction to ambient; device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch (Note) | 1 |+| Drain-source breakdown voltage (N-channel) | V(BR)DSS | 20 | | | V | VGS = 0V, ID =250µA | 2 |+| Zero gate voltage drain current (N-channel) | IDSS | | | 1 | µA | VDS =20V,VGS = 0V | 2 |+| Gate-body leakage current (N-channel) | IGSS | -0.1 | | 0.1 | µA | VGS =±12V, VDS = 0V | 2 |+| Gate threshold voltage (N-channel) | VGS(th) | 0.5 | 0.7 | 1 | V | VDS =VGS, ID =250µA | 2 |+| Drain-source on-resistance (N-channel) | RDS(on) | | | 38 | mΩ | VGS =4.5V, ID =4.5A | 2 |+| Drain-source on-resistance (N-channel) | RDS(on) | | | 45 | mΩ | VGS =2.5V, ID =3.5A | 2 |+| Forward transconductance (N-channel) | gFS | | 9 | | S | VDS =5V, ID =7A | 2 |+| Diode forward voltage (N-channel) | VSD | | 0.7 | 1.3 | V | IS=1.7A,VGS=0V | 2 |+| Total gate charge (N-channel) | Qg | | 11 | | nC | VDS =10V,VGS =4.5V,ID =4A | 2 |+| Gate-source charge (N-channel) | Qgs | | 2.3 | | nC | VDS =10V,VGS =4.5V,ID =4A | 2 |+| Gate-drain charge (N-channel) | Qgd | | 2.5 | | nC | VDS =10V,VGS =4.5V,ID =4A | 2 |+| Input Capacitance (N-channel) | Ciss | | 800 | | pF | VDS=8V,VGS=0V,f=1MHz | 2 |+| Output Capacitance (N-channel) | Coss | | 155 | | pF | VDS=8V,VGS=0V,f=1MHz | 2 |+| Reverse Transfer Capacitance (N-channel) | Crss | | 125 | | pF | VDS=8V,VGS=0V,f=1MHz | 2 |+| Turn-on delay time (N-channel) | td(on) | | 18 | | ns | VDD=10V , VGS=4V , ID=1A, RG=10Ω | 2 |+| Turn-on rise time (N-channel) | tr | | 5 | | ns | VDD=10V , VGS=4V , ID=1A, RG=10Ω | 2 |+| Turn-off delay time (N-channel) | td(off) | | 43 | | ns | VDD=10V , VGS=4V , ID=1A, RG=10Ω | 2 |+| Turn-off fall time (N-channel) | tf | | 20 | | ns | VDD=10V , VGS=4V , ID=1A, RG=10Ω | 2 |+| Drain-source breakdown voltage (P-channel) | V(BR)DSS | -20 | | | V | VGS = 0V, ID =-250µA | 3 |+| Zero gate voltage drain current (P-channel) | IDSS | | | -1 | µA | VDS =-16V,VGS = 0V | 3 |+| Gate-body leakage current (P-channel) | IGSS | -100 | | 100 | nA | VGS =±12V, VDS = 0V | 3 |+| Gate threshold voltage (P-channel) | VGS(th) | -0.5 | -0.7 | -1 | V | VDS =VGS, ID = -250µA | 3 |+| Drain-source on-resistance (P-channel) | RDS(on) | | 70 | 90 | mΩ | VGS = -4.5V, ID = -0.5A | 3 |+| Drain-source on-resistance (P-channel) | RDS(on) | | 90 | 110 | mΩ | VGS = -2.5V, ID = -0.5A | 3 |+| Forward transconductance (P-channel) | gFS | | 5 | | S | VDS =-5V, ID = -2A | 3 |+| Input Capacitance (P-channel) | Ciss | | 405 | | pF | VDS=-10V,VGS=0V,f=1MHz | 3 |+| Output Capacitance (P-channel) | Coss | | 75 | | pF | VDS=-10V,VGS=0V,f=1MHz | 3 |+| Reverse Transfer Capacitance (P-channel) | Crss | | 55 | | pF | VDS=-10V,VGS=0V,f=1MHz | 3 |+| Gate resistance (P-channel) | Rg | | 6 | | Ω | f =1MHz | 3 |+| Total Gate Charge (P-channel) | Qg | | 3.3 | 12 | nC | VDS =-10V,VGS =-2.5V,ID=-3A | 3 |+| Gate-Source Charge (P-channel) | Qgs | | 0.7 | | nC | VDS =-10V,VGS =-2.5V,ID=-3A | 3 |+| Gate-Drain Charge (P-channel) | Qgd | | 1.3 | | nC | VDS =-10V,VGS =-2.5V,ID=-3A | 3 |+| Turn-on delay time (P-channel) | td(on) | | 11 | | ns | VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω | 3 |+| Turn-on rise time (P-channel) | tr | | 35 | | ns | VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω | 3 |+| Turn-off delay time (P-channel) | td(off) | | 30 | | ns | VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω | 3 |+| Turn-off fall time (P-channel) | tf | | 10 | | ns | VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω | 3 |+| Diode forward voltage (P-channel) | VSD | | -0.7 | -1.3 | V | VGS =0V, IS=-1.25A | 3 |+ ## CAD (KiCad official) - Symbol: `SIL2308-TP`
page.json+560−1@@ -168,6 +168,565 @@ "Package": "SOT-23-6L", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f3288c2bc947d063",+ "rows": [+ {+ "name": "Drain-Source Voltage (N-channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (P-channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (N-channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (P-channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -4,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature Range",+ "symbol": "",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Thermal Resistance, Junction to Ambient",+ "symbol": "",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 119,+ "conditions": "Junction to ambient; device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch (Note)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage (N-channel)",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (N-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS =20V,VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current (N-channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -0.1,+ "typ": null,+ "max": 0.1,+ "conditions": "VGS =±12V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage (N-channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.5,+ "typ": 0.7,+ "max": 1,+ "conditions": "VDS =VGS, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance (N-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 38,+ "conditions": "VGS =4.5V, ID =4.5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance (N-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "VGS =2.5V, ID =3.5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward transconductance (N-channel)",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 9,+ "max": null,+ "conditions": "VDS =5V, ID =7A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage (N-channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.7,+ "max": 1.3,+ "conditions": "IS=1.7A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge (N-channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 11,+ "max": null,+ "conditions": "VDS =10V,VGS =4.5V,ID =4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge (N-channel)",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.3,+ "max": null,+ "conditions": "VDS =10V,VGS =4.5V,ID =4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge (N-channel)",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.5,+ "max": null,+ "conditions": "VDS =10V,VGS =4.5V,ID =4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance (N-channel)",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 800,+ "max": null,+ "conditions": "VDS=8V,VGS=0V,f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance (N-channel)",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 155,+ "max": null,+ "conditions": "VDS=8V,VGS=0V,f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance (N-channel)",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 125,+ "max": null,+ "conditions": "VDS=8V,VGS=0V,f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time (N-channel)",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 18,+ "max": null,+ "conditions": "VDD=10V , VGS=4V , ID=1A, RG=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on rise time (N-channel)",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "VDD=10V , VGS=4V , ID=1A, RG=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time (N-channel)",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 43,+ "max": null,+ "conditions": "VDD=10V , VGS=4V , ID=1A, RG=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off fall time (N-channel)",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 20,+ "max": null,+ "conditions": "VDD=10V , VGS=4V , ID=1A, RG=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage (P-channel)",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =-250µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (P-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS =-16V,VGS = 0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current (P-channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS =±12V, VDS = 0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage (P-channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.5,+ "typ": -0.7,+ "max": -1,+ "conditions": "VDS =VGS, ID = -250µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance (P-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 70,+ "max": 90,+ "conditions": "VGS = -4.5V, ID = -0.5A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance (P-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 90,+ "max": 110,+ "conditions": "VGS = -2.5V, ID = -0.5A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Forward transconductance (P-channel)",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "VDS =-5V, ID = -2A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance (P-channel)",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 405,+ "max": null,+ "conditions": "VDS=-10V,VGS=0V,f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance (P-channel)",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 75,+ "max": null,+ "conditions": "VDS=-10V,VGS=0V,f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance (P-channel)",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 55,+ "max": null,+ "conditions": "VDS=-10V,VGS=0V,f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance (P-channel)",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 6,+ "max": null,+ "conditions": "f =1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (P-channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.3,+ "max": 12,+ "conditions": "VDS =-10V,VGS =-2.5V,ID=-3A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge (P-channel)",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.7,+ "max": null,+ "conditions": "VDS =-10V,VGS =-2.5V,ID=-3A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge (P-channel)",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.3,+ "max": null,+ "conditions": "VDS =-10V,VGS =-2.5V,ID=-3A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time (P-channel)",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": null,+ "conditions": "VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on rise time (P-channel)",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 35,+ "max": null,+ "conditions": "VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time (P-channel)",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 30,+ "max": null,+ "conditions": "VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off fall time (P-channel)",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage (P-channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.7,+ "max": -1.3,+ "conditions": "VGS =0V, IS=-1.25A",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -209,4 +768,4 @@ "visibility": { "public": true }-}+}