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SIL08N03-TP

Public Made by Adom

by adom

MCC Micro Commercial Components MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SIL08N03-TP

MCC Micro Commercial Components · MOSFETs · SOT-23-6L

SIL08N03-TP from MCC Micro Commercial Components, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the N-channel MOSFET, rated for a drain-source voltage (VDS) of 30 V.
2 D passive Drain of the N-channel MOSFET, rated for a drain-source voltage (VDS) of 30 V.
3 G input Gate of the N-channel MOSFET, rated for a gate-source voltage (VGS) of ±20 V.
4 S passive Source of the N-channel MOSFET; the device operates with junction temperature from -55°C to +150°C.
5 D passive Drain of the N-channel MOSFET, rated for a drain-source voltage (VDS) of 30 V.
6 D passive Drain of the N-channel MOSFET, rated for a drain-source voltage (VDS) of 30 V.

Key specifications

Parameter Value
Manufacturer MCC Micro Commercial Components
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 8 A TC=25°C 1
Continuous Drain Current ID 5.6 A TC=100°C 1
Pulsed Drain Current IDM 32 A Note 2: pulse width limited by maximum junction temperature 1
Total Power Dissipation PD 1.6 W Surface mounted on FR4 board, t < 10 sec (Note 1) 1
Operating Junction Temperature Range TJ -55 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Maximum Thermal Resistance, Junction to Case 78 °C/W Junction to Case (Note 1) 1
Gate-Threshold Voltage VGS(th) 1 1.4 3 V VDS=VGS, ID=250µA 2
Gate-Source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Drain-Source On-Resistance RDS(on) 9 14 mΩ VGS=10V, ID=8A 2
Drain-Source On-Resistance RDS(on) 11 16 mΩ VGS=4.5V, ID=8A 2
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=30V, VGS=0V 2
Forward Transconductance gFS 30 S VDS=5V, ID=8A 2
Input Capacitance Ciss 900 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 300 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 50 pF VDS=15V, VGS=0V, f=1MHz 2
Turn-On Delay Time td(on) 15 ns VGS=10V, VDD=25V, ID=1A, RGEN=6Ω 2
Turn-On Rise Time tr 10 ns VGS=10V, VDD=25V, ID=1A, RGEN=6Ω 2
Turn-Off Delay Time td(off) 45 ns VGS=10V, VDD=25V, ID=1A, RGEN=6Ω 2
Turn-Off Fall Time tf 12 ns VGS=10V, VDD=25V, ID=1A, RGEN=6Ω 2
Total Gate Charge Qg 13 nC VDS=15V, ID=8A, VGS=5V 2
Gate-Source Charge Qgs 3.2 nC 2
Gate-Drain Charge Qgd 2 nC 2
Drain-Source Diode Forward Current IS 8 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=8A 2

CAD (KiCad official)

  • Symbol: SIL08N03-TP
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: sil08n03-tp-etched.step / sil08n03-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sil08n03-tp.step / sil08n03-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC Micro Commercial Components datasheet (4 pp, sha256 73124fa795bcd311, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF