component
SiHP6N80E-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSiHP6N80E-VB
VBsemi Elec · MOSFETs · TO-220AB
SiHP6N80E-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V absolute maximum, with threshold of 2.5 V to 4.5 V at ID = 250 μA. |
| 2 | D | passive | Drain; drain-source voltage rated 800 V, continuous current 6 A at TC = 25 °C and pulsed up to 18 A, connected to the tab (junction-to-case Rth 0.7 °C/W max). |
| 3 | S | passive | Source; source of the N-channel MOSFET, with continuous body-diode current IS of 6 A and pulsed 18 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 800 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 6 | A | TJ = 150 °C, VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 3.5 | A | TJ = 150 °C, VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 18 | A | TC = 25 °C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 650 | mJ | VDD = 100 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 3 A | 1 | ||
| Maximum Power Dissipation | PD | 140 | W | TC = 25 °C | 1 | ||
| Drain-Source Voltage Slope | dV/dt | 50 | V/ns | TJ = 125 °C | 1 | ||
| Reverse Diode dV/dt | dV/dt | 15 | V/ns | ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Peak Temperature | 260 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Junction-to-Ambient Thermal Resistance | RthJA | -62 | °C/W | 2 | |||
| Junction-to-Case (Drain) Thermal Resistance | RthJC | -0.7 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 800 | V | VGS = 0 V, ID = 1 mA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Gate-Source Leakage | IGSS | -1 | 1 | μA | VGS = ± 30 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 800 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS = 640 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Continuous Source-Drain Diode Current | IS | 6 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 18 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 8 A, VGS = 0 V | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 0.7 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.8 | Ω | VGS = 10 V, ID = 2 A | 2 | ||
| Forward Transconductance | gfs | 5.6 | S | VDS = 30 V, ID = 2 A | 2 | ||
| Input Capacitance | Ciss | 1300 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 80 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 4 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Gate Input Resistance | Rg | 0.8 | Ω | f = 1 MHz, open drain | 2 | ||
| Gate-Source Charge | Qgs | 15 | nC | VGS = 10 V, ID = 8 A, VDS = 520 V | 2 | ||
| Gate-Drain Charge | Qgd | 19 | nC | VGS = 10 V, ID = 8 A, VDS = 520 V | 2 | ||
| Turn-Off Delay Time | td(off) | 80 | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 | ||
| Fall Time | tf | 12 | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 | ||
| Reverse Recovery Time | trr | 475 | ns | TJ = 25 °C, IF = IS = 8 A, dI/dt = 100 A/μs, VR = 400 V | 2 | ||
| Reverse Recovery Charge | Qrr | 5.8 | μC | TJ = 25 °C, IF = IS = 8 A, dI/dt = 100 A/μs, VR = 400 V | 2 | ||
| Reverse Recovery Current | IRRM | 35 | A | TJ = 25 °C, IF = IS = 8 A, dI/dt = 100 A/μs, VR = 400 V | 2 |
CAD (KiCad official)
- Symbol:
SiHP6N80E-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
sihp6n80e-vb-etched.step/sihp6n80e-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sihp6n80e-vb.step/sihp6n80e-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
5e9c55e4613bc082, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).