# SIHP5N80AE-GE3

**Vishay Intertech** · MOSFETs · TO-220AB

SIHP5N80AE-GE3 from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal, with an integrated Zener ESD protection diode, rated for VGS of ±30 V maximum and a gate-source threshold of 2 V to 4 V at ID = 250 µA. |
| 2 | D | passive | Drain terminal, with a 800 V minimum drain-source breakdown voltage and 4.4 A continuous drain current at TC = 25 °C (7 A pulsed). |
| 3 | S | passive | Source terminal, carrying up to 4.4 A continuous drain current at TC = 25 °C and the same 4.4 A continuous body-diode current (7 A pulsed). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `SIHP5N80AE-GE3`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `sihp5n80ae-ge3-etched.step` / `sihp5n80ae-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sihp5n80ae-ge3.step` / `sihp5n80ae-ge3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](docs/sihp5n80ae-ge3-datasheet.pdf) (7 pp, sha256 `12f80ba6aac729da`, retrieved 2026-10-28, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sihp5n80ae-ge3-datasheet.pdf)