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SIHP12N50C-E3

Public Made by Adom

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Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SIHP12N50C-E3

Vishay Intertech · MOSFETs · TO-220AB

SIHP12N50C-E3 from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is rated at ±30 V (VGS).
2 D passive Drain of the N-channel MOSFET, electrically connected to the mounting tab; drain-source voltage is rated at 500 V (VDS).
3 S passive Source of the N-channel MOSFET; continuous drain current is rated at 12 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 500 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage (N) VGS(th) 3 5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS 100 nA VGS = ±30 V (printed as ± 100 nA) 2
Zero Gate Voltage Drain Current IDSS 50 μA VDS = 500 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TJ = 125 °C) IDSS 250 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.46 0.555 Ω VGS = 10 V, ID = 4 A 2
Total Gate Charge Qg 32 48 nC VGS = 10 V, ID = 10 A, VDS = 400 V 2
Continuous Source-Drain Diode Current IS 12 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Diode Forward Current ISM 28 A 2
Body Diode Voltage VSD 1.8 V TJ = 25 °C, IS = 10 A, VGS = 0 V 2
Drain-Source Voltage VDS 500 V TC = 25 °C unless otherwise noted 1
Gate-Source Voltage VGS -30 30 V Printed as ± 30 1
Continuous Drain Current ID 12 A VGS at 10 V, TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID 7.5 A VGS at 10 V, TC = 100 °C (TJ = 150 °C) 1
Pulsed Drain Current IDM 28 A Repetitive rating; pulse width limited by maximum junction temperature 1
Linear Derating Factor (TO-220AB) 1.67 W/°C TO-220AB column 1
Single Pulse Avalanche Energy EAS 180 mJ VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 12 A 1
Maximum Power Dissipation (TO-220AB) PD 208 W TO-220AB column 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s, 1.6 mm from case 1
Maximum Junction-to-Ambient RthJA 62 °C/W TO-220AB column 2
Maximum Junction-to-Case (Drain) RthJC 0.6 °C/W TO-220AB column 2
Junction-to-Ambient (PCB mount) RthJA 40 °C/W TO-220AB; mounted on 1 in square PCB (FR-4 or G-10) 2

CAD (KiCad official)

  • Symbol: SIHP12N50C-E3
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: sihp12n50c-e3-etched.step / sihp12n50c-e3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sihp12n50c-e3.step / sihp12n50c-e3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (13 pp, sha256 0edfb028dbda51fc, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF