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SIHP065N60E-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorsihp065n60e-ge3factory-2.0.0extractor-text

Verified SIHP065N60E-GE3

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: SIHP065N60E-GE3 · TO-220AB · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • ✓distributor: lcsc C3290445, digikey SIHP065N60E-GE3-ND, mouser 78-SIHP065N60E-GE3
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-l2he82nc/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ sihp065n60e-ge3.kicad_sym✓ sihp065n60e-ge3.kicad_mod✓ sihp065n60e-ge3.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers sihp065n60e-ge3: viewers · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
sihp065n60e-ge3-etched.glb Publish 0.1.0 · Ray 7d ago
sihp065n60e-ge3-etched.step sihp065n60e-ge3: factory component page (tier=mfr) · Ray 7d ago
sihp065n60e-ge3-hero.glb sihp065n60e-ge3: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
sihp065n60e-ge3-hero.overlay.json Publish 0.1.0 · Ray 7d ago
sihp065n60e-ge3.glb Publish 0.1.0 · Ray 7d ago
sihp065n60e-ge3.kicad_mod Publish 0.1.0 · Ray 7d ago
sihp065n60e-ge3.kicad_sym Publish 0.1.0 · Ray 7d ago
sihp065n60e-ge3.lbr Publish 0.1.0 · Ray 7d ago
sihp065n60e-ge3.step Publish 0.1.0 · Ray 7d ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 7d ago

SIHP065N60E-GE3

Vishay Intertech · MOSFETs · TO-220AB

SIHP065N60E-GE3 from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS(th) of 3 V to 5 V at ID = 250 μA and an absolute maximum VGS of ±30 V.
2 D passive Drain, also connected to the tab; VDS is rated at 600 V and continuous ID is 40 A at TC = 25 °C.
3 S passive Source; the continuous source-drain body diode current IS is 40 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 600 V TC = 25 °C 1
Gate-source voltage VGS -30 30 V TC = 25 °C 1
Continuous drain current ID 40 A TJ = 150 °C, VGS at 10 V, TC = 25 °C 1
Continuous drain current ID 25 A TJ = 150 °C, VGS at 10 V, TC = 100 °C 1
Pulsed drain current IDM 116 A Repetitive rating; pulse width limited by maximum junction temperature 1
Linear derating factor 2 W/°C 1
Single pulse avalanche energy EAS 226 mJ VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.0 A 1
Maximum power dissipation PD 250 W TC = 25 °C 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Drain-source voltage slope dV/dt 100 V/ns TJ = 125 °C 1
Reverse diode dV/dt dV/dt 50 V/ns ISD ≤ ID, dI/dt = 400 A/μs, starting TJ = 25 °C 1
Soldering peak temperature 300 °C For 10 s, 1.6 mm from case 1
Maximum junction-to-ambient RthJA 62 °C/W 2
Maximum junction-to-case (drain) RthJC 0.5 °C/W 2
Drain-source breakdown voltage VDS 600 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 3 5 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VGS = ± 20 V 2
Gate-source leakage IGSS -1 1 μA VGS = ± 30 V 2
Zero gate voltage drain current IDSS 1 μA VDS = 600 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 10 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C 2
Drain-source on-state resistance RDS(on) 0.057 0.065 Ω VGS = 10 V, ID = 16 A 2
Total gate charge Qg 49 74 nC VGS = 10 V, ID = 16 A, VDS = 480 V 2
Turn-on delay time td(on) 28 56 ns VDD = 480 V, ID = 16 A, VGS = 10 V, Rg = 9.1 Ω 2
Rise time tr 46 92 ns VDD = 480 V, ID = 16 A, VGS = 10 V, Rg = 9.1 Ω 2
Turn-off delay time td(off) 54 108 ns VDD = 480 V, ID = 16 A, VGS = 10 V, Rg = 9.1 Ω 2
Fall time tf 13 26 ns VDD = 480 V, ID = 16 A, VGS = 10 V, Rg = 9.1 Ω 2
Gate input resistance Rg 0.3 0.7 1.4 Ω f = 1 MHz, open drain 2
Continuous source-drain diode current IS 40 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed diode forward current ISM 116 A 2
Diode forward voltage VSD 1.2 V TJ = 25 °C, IS = 16 A, VGS = 0 V 2
Reverse recovery time trr 382 764 ns TJ = 25 °C, IF = IS = 16 A, dI/dt = 100 A/μs, VR = 400 V 2
Reverse recovery charge Qrr 7.1 14.2 μC TJ = 25 °C, IF = IS = 16 A, dI/dt = 100 A/μs, VR = 400 V 2
VDS temperature coefficient ΔVDS/TJ 0.72 V/°C Reference to 25 °C, ID = 1 mA 2
Forward transconductance gfs 12 S VDS = 20 V, ID = 16 A 2
Input capacitance Ciss 2700 pF VGS = 0 V, VDS = 100 V, f = 1 MHz 2
Output capacitance Coss 102 pF VGS = 0 V, VDS = 100 V, f = 1 MHz 2
Reverse transfer capacitance Crss 5 pF VGS = 0 V, VDS = 100 V, f = 1 MHz 2
Effective output capacitance, energy related Co(er) 93 pF VDS = 0 V to 480 V, VGS = 0 V 2
Effective output capacitance, time related Co(tr) 593 pF VDS = 0 V to 480 V, VGS = 0 V 2
Gate-source charge Qgs 19 nC VGS = 10 V, ID = 16 A, VDS = 480 V 2
Gate-drain charge Qgd 15 nC VGS = 10 V, ID = 16 A, VDS = 480 V 2
Reverse recovery current IRRM 34 A TJ = 25 °C, IF = IS = 16 A, dI/dt = 100 A/μs, VR = 400 V 2

CAD (KiCad official)

  • Symbol: SIHP065N60E-GE3
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: sihp065n60e-ge3-etched.step / sihp065n60e-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sihp065n60e-ge3.step / sihp065n60e-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 d49ea4f02a6a50ed, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF