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SIHD2N80E-GE3
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Vishay Intertech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SIHD2N80E-GE3
Vishay Intertech · MOSFETs · TO-252
SIHD2N80E-GE3 from Vishay Intertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with absolute maximum gate-source voltage VGS of ±30 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS of 800 V with continuous drain current ID of 2.8 A at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with the integral body diode rated for continuous source-drain current IS of 2.8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 800 | V | 1 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous drain current | ID | 2.8 | A | TJ = 150 °C, VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous drain current | ID | 1.8 | A | TJ = 150 °C, VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed drain current | IDM | 5 | A | Repetitive rating; pulse width limited by maximum junction temperature (note a) | 1 | ||
| Linear derating factor | 0.5 | W/°C | 1 | ||||
| Single pulse avalanche energy | EAS | 14 | mJ | VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 0.9 A (note b) | 1 | ||
| Maximum power dissipation | PD | 62.5 | W | 1 | |||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-source voltage slope | dV/dt | 70 | V/ns | TJ = 125 °C | 1 | ||
| Reverse diode dV/dt | dV/dt | 0.13 | ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C (note d) | 1 | |||
| Soldering recommendations (peak temperature) | 300 | °C | For 10 s (note c: 1.6 mm from case) | 1 | |||
| Maximum junction-to-ambient thermal resistance | RthJA | 62 | °C/W | 2 | |||
| Maximum junction-to-case (drain) thermal resistance | RthJC | 2 | °C/W | 2 | |||
| Drain-source breakdown voltage | VDS | 800 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-source threshold voltage (N) | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VGS = ±20 V | 2 | |
| Gate-source leakage | IGSS | -1 | 1 | μA | VGS = ±30 V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 800 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | 10 | μA | VDS = 640 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 2.38 | 2.75 | VGS = 10 V, ID = 1.0 A | 2 | ||
| Gate input resistance | Rg | 1.8 | 3.6 | 7.2 | f = 1 MHz, open drain | 2 | |
| Total gate charge | Qg | 9.8 | 19.6 | nC | VGS = 10 V, ID = 1.0 A, VDS = 480 V | 2 | |
| Turn-on delay time | td(on) | 11 | 22 | ns | VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1 Ω | 2 | |
| Rise time | tr | 7 | 14 | ns | VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1 Ω | 2 | |
| Turn-off delay time | td(off) | 19 | 38 | ns | VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1 Ω | 2 | |
| Fall time | tf | 27 | 54 | ns | VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1 Ω | 2 | |
| Continuous source-drain diode current | IS | 2.8 | A | 2 | |||
| Pulsed diode forward current | ISM | -5 | A | 2 | |||
| Diode forward voltage | VSD | 1.2 | V | TJ = 25 °C, IS = 1 A, VGS = 0 V | 2 | ||
| Reverse recovery time | trr | 278 | 556 | ns | TJ = 25 °C, IF = IS = 1.0 A, dI/dt = 100 A/μs, VR = 25 V | 2 | |
| Reverse recovery charge | Qrr | 0.9 | 1.8 | μC | TJ = 25 °C, IF = IS = 1.0 A, dI/dt = 100 A/μs, VR = 25 V | 2 |
CAD (KiCad official)
- Symbol:
SIHD2N80E-GE3 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sihd2n80e-ge3-etched.step/sihd2n80e-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sihd2n80e-ge3.step/sihd2n80e-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (10 pp, sha256
52c18e0acb045469, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SIHD2N80E-GE3
**Vishay Intertech** · MOSFETs · TO-252
SIHD2N80E-GE3 from Vishay Intertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with absolute maximum gate-source voltage VGS of ±30 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS of 800 V with continuous drain current ID of 2.8 A at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with the integral body diode rated for continuous source-drain current IS of 2.8 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 800 | V | | 1 |
| Gate-source voltage | VGS | -30 | | 30 | V | | 1 |
| Continuous drain current | ID | | | 2.8 | A | TJ = 150 °C, VGS at 10 V, TC = 25 °C | 1 |
| Continuous drain current | ID | | | 1.8 | A | TJ = 150 °C, VGS at 10 V, TC = 100 °C | 1 |
| Pulsed drain current | IDM | | | 5 | A | Repetitive rating; pulse width limited by maximum junction temperature (note a) | 1 |
| Linear derating factor | | | | 0.5 | W/°C | | 1 |
| Single pulse avalanche energy | EAS | | | 14 | mJ | VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 0.9 A (note b) | 1 |
| Maximum power dissipation | PD | | | 62.5 | W | | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Drain-source voltage slope | dV/dt | | | 70 | V/ns | TJ = 125 °C | 1 |
| Reverse diode dV/dt | dV/dt | | | 0.13 | | ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C (note d) | 1 |
| Soldering recommendations (peak temperature) | | | | 300 | °C | For 10 s (note c: 1.6 mm from case) | 1 |
| Maximum junction-to-ambient thermal resistance | RthJA | | | 62 | °C/W | | 2 |
| Maximum junction-to-case (drain) thermal resistance | RthJC | | | 2 | °C/W | | 2 |
| Drain-source breakdown voltage | VDS | 800 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-source threshold voltage (N) | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS | -100 | | 100 | nA | VGS = ±20 V | 2 |
| Gate-source leakage | IGSS | -1 | | 1 | μA | VGS = ±30 V | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS = 800 V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS | | | 10 | μA | VDS = 640 V, VGS = 0 V, TJ = 125 °C | 2 |
| Drain-source on-state resistance | RDS(on) | | 2.38 | 2.75 | | VGS = 10 V, ID = 1.0 A | 2 |
| Gate input resistance | Rg | 1.8 | 3.6 | 7.2 | | f = 1 MHz, open drain | 2 |
| Total gate charge | Qg | | 9.8 | 19.6 | nC | VGS = 10 V, ID = 1.0 A, VDS = 480 V | 2 |
| Turn-on delay time | td(on) | | 11 | 22 | ns | VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1 Ω | 2 |
| Rise time | tr | | 7 | 14 | ns | VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1 Ω | 2 |
| Turn-off delay time | td(off) | | 19 | 38 | ns | VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1 Ω | 2 |
| Fall time | tf | | 27 | 54 | ns | VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1 Ω | 2 |
| Continuous source-drain diode current | IS | | | 2.8 | A | | 2 |
| Pulsed diode forward current | ISM | | | -5 | A | | 2 |
| Diode forward voltage | VSD | | | 1.2 | V | TJ = 25 °C, IS = 1 A, VGS = 0 V | 2 |
| Reverse recovery time | trr | | 278 | 556 | ns | TJ = 25 °C, IF = IS = 1.0 A, dI/dt = 100 A/μs, VR = 25 V | 2 |
| Reverse recovery charge | Qrr | | 0.9 | 1.8 | μC | TJ = 25 °C, IF = IS = 1.0 A, dI/dt = 100 A/μs, VR = 25 V | 2 |
## CAD (KiCad official)
- Symbol: `SIHD2N80E-GE3`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sihd2n80e-ge3-etched.step` / `sihd2n80e-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sihd2n80e-ge3.step` / `sihd2n80e-ge3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8611875977194852352) (10 pp, sha256 `52c18e0acb045469`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sihd2n80e-ge3-datasheet.pdf)