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Ray si9948aey: specified limits as data (metadata.characteristics, 27 rows from the datasheet) ca0ffde 17d ago

SI9948AEY

UMW · MOSFETs · SOP-8

SI9948AEY from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of channel 1 (P-channel MOSFET); the device limits are VDS = -60 V and continuous ID = -5.3 A at TC = 25 °C.
2 G1 input Gate of channel 1; the datasheet limits VGS to ±20 V.
3 S2 passive Source of channel 2 (P-channel MOSFET); the device limits are VDS = -60 V and continuous ID = -5.3 A at TC = 25 °C.
4 G2 input Gate of channel 2; the datasheet limits VGS to ±20 V.
5 D2 passive Drain of channel 2 (P-channel MOSFET); the device limit is VDS = -60 V.
6 D2 passive Drain of channel 2 (P-channel MOSFET); the device limit is VDS = -60 V.
7 D1 passive Drain of channel 1 (P-channel MOSFET); the device limit is VDS = -60 V.
8 D1 passive Drain of channel 1 (P-channel MOSFET); the device limit is VDS = -60 V.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID -5.3 A TC=25°C 2
Continuous Drain Current ID -5 A TC=70°C 2
Pulsed Drain Current IDM -32 A 2
Continuous Source-Drain Diode Current IS -4.1 A TC=25°C 2
Continuous Source-Drain Diode Current IS -2 A TA=25°C 2
Avalanche Current IAS -20 A 2
Single-Pulse Avalanche Energy EAS 20 mJ L = 0.1 mH 2
Maximum Power Dissipation PD 4 W TC=25°C 2
Maximum Power Dissipation PD 2.5 W TC=70°C 2
Maximum Power Dissipation PD 2 W TA=25°C 2
Maximum Power Dissipation PD 1.4 W TA=70°C 2
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 °C 2
Maximum Junction-to-Ambient (t ≤ 10s) RthJA 38 50 °C/W t ≤10s 1
Maximum Junction-to-Ambient (steady state) RthJA 85 °C/W Steady-state, per note c 1
Maximum Junction-to-Foot RthJF 20 25 °C/W 1
Drain-Source Breakdown Voltage VDS -60 V VDS=0V, ID=-250μA 3
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250μA 3
Gate-Source Leakage IGSS -100 100 nA VDS=0V, VGS=±20V 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS -5 µA VDS=-30V, VGS=0V, TJ=55°C 3
On-State Drain Current ID(ON) -30 A VDS≥-10V, VGS=-10V 3
Drain-Source On-State Resistance RDS(ON) 54 mΩ VGS=-10V, ID=-5A 3
Drain-Source On-State Resistance RDS(ON) 59 mΩ VGS=-4.5V, ID=-4.5A 3
Body Diode Voltage VSD -0.75 -1.2 V IS=-2A, VGS=0V 4
Pulse Diode Forward Current ISM -32 A 4

CAD (KiCad official)

  • Symbol: SI9948AEY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si9948aey-etched.step / si9948aey-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si9948aey.step / si9948aey.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 aaa20b599cbf2f90, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF