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SI9933CDY-T1-GE3-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI9933CDY-T1-GE3-VB

VBsemi Elec · MOSFETs · SO-8

SI9933CDY-T1-GE3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1; the device is rated VDS -30 V with VGS limited to ±20 V.
2 G1 input Gate of P-channel MOSFET 1; VGS must stay within the ±20 V absolute maximum rating.
3 S2 passive Source of P-channel MOSFET 2; the device is rated VDS -30 V with VGS limited to ±20 V.
4 G2 input Gate of P-channel MOSFET 2; VGS must stay within the ±20 V absolute maximum rating.
5 D2 passive Drain of P-channel MOSFET 2; the drain-source voltage is limited to -30 V.
6 D2 passive Drain of P-channel MOSFET 2 (common to pin 5); the drain-source voltage is limited to -30 V.
7 D1 passive Drain of P-channel MOSFET 1 (common to pin 8); the drain-source voltage is limited to -30 V.
8 D1 passive Drain of P-channel MOSFET 1; the drain-source voltage is limited to -30 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -7.3 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -7 A TC = 70 °C 1
Continuous Drain Current ID -5.9 A TA = 70 °C, notes a, b 1
Pulsed Drain Current IDM -32 A 1
Continuous Source-Drain Diode Current IS -4.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2 A TA = 25 °C, notes a, b 1
Avalanche Current IAS -20 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 20 mJ 1
Maximum Power Dissipation PD 5 W TC = 25 °C 1
Maximum Power Dissipation PD 3.2 W TC = 70 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C, notes a, b 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C, notes a, b 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 38 50 °C/W t ≤ 10 s, notes a, c 1
Maximum Junction-to-Ambient, steady state RthJA 85 °C/W Steady state, note c 1
Maximum Junction-to-Foot, steady state RthJF 20 25 °C/W Steady state 1
Drain-Source Breakdown Voltage -30 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -30 A VDS ≥ -10 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.035 Ω VGS = -10 V, ID = -6.3 A 2
Body Diode Voltage VSD -0.75 -1.2 V IS = -2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 34 60 ns IF = -2 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 22 40 nC IF = -2 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Total Gate Charge Qg 32 50 nC VDS = -15 V, VGS = -10 V, ID = -6.1 A 2
Total Gate Charge Qg 15 25 nC VDS = -15 V, VGS = -4.5 V, ID = -6.1 A 2
Turn-On Delay Time td(on) 10 15 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 8 15 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 45 70 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 12 25 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 42 70 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 35 60 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 40 70 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 16 30 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω 2
VDS Temperature Coefficient ΔVDS/TJ -31 mV/°C ID = -250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5 2
Forward Transconductance gfs 23 S VDS = -10 V, ID = -6.1 A 2

CAD (KiCad official)

  • Symbol: SI9933CDY-T1-GE3-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si9933cdy-t1-ge3-vb-etched.step / si9933cdy-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si9933cdy-t1-ge3-vb.step / si9933cdy-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 769389fb8aa03dd6, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF