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SI9926CDY-T1-GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI9926CDY-T1-GE3-HXY
HXY MOSFET · MOSFETs · SOP-8
SI9926CDY-T1-GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of dual N-channel MOSFET 1; the datasheet gives no pin-specific limit, so the device ratings apply (VDS 20V, continuous ID 8A). |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage is rated ±12V (absolute maximum), and RDS(on) is specified at VGS of 4.5V, 2.5V and 1.8V. |
| 3 | S2 | passive | Source of dual N-channel MOSFET 2; the datasheet gives no pin-specific limit, so the device ratings apply (VDS 20V, continuous ID 8A). |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage is rated ±12V (absolute maximum), and RDS(on) is specified at VGS of 4.5V, 2.5V and 1.8V. |
| 5 | D2 | passive | Drain of MOSFET 2; drain-source voltage is rated 20V, continuous drain current 8A and pulsed drain current 28A. |
| 6 | D2 | passive | Drain of MOSFET 2; drain-source voltage is rated 20V, continuous drain current 8A and pulsed drain current 28A. |
| 7 | D1 | passive | Drain of MOSFET 1; drain-source voltage is rated 20V, continuous drain current 8A and pulsed drain current 28A. |
| 8 | D1 | passive | Drain of MOSFET 1; drain-source voltage is rated 20V, continuous drain current 8A and pulsed drain current 28A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TC=25℃ | 1 | |
| Drain Current-Continuous | ID | 8 | A | TC=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 28 | A | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 2.25 | W | TC=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 80 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 2 | |
| Drain Cut-off Current | IDSS | 1 | µA | VDS = 20V, VGS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.7 | 1 | V | VGS = VDS, ID = 250µA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 13 | 20 | mΩ | VGS = 4.5V, ID = 5A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 18 | 30 | mΩ | VGS = 2.5V, ID = 4.7A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 28 | 57 | mΩ | VGS = 1.8V, ID = 4.3A | 2 | |
| Body Diode Voltage | VSD | 1.2 | V | IS = 4A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | 8 | A | 2 |
CAD (KiCad official)
- Symbol:
SI9926CDY-T1-GE3-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
si9926cdy-t1-ge3-hxy-etched.step/si9926cdy-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si9926cdy-t1-ge3-hxy.step/si9926cdy-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
804f6169d9e0c87e, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).