SI9926BDY-T1-E3-VB - Commit

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Ray ·d6a93e3f35 ·1mo ago ·parent 81a8f8b
1 file changed +10−7
page.json+10−7
@@ -38,7 +38,7 @@         "number": "2",         "name": "G1",         "type": "input",-        "description": "Gate of N-channel MOSFET #1. VGS absolute maximum \u00b1 12 V; VGS(th) = 0.6-1.5 V at ID = 250 \u00b5A. Drive with 4.5 V for full enhancement (RDS(on) = 0.019 \u03a9)."+        "description": "Gate of N-channel MOSFET #1. VGS absolute maximum ± 12 V; VGS(th) = 0.6-1.5 V at ID = 250 µA. Drive with 4.5 V for full enhancement (RDS(on) = 0.019 Ω)."       },       {         "number": "3",@@ -50,31 +50,31 @@         "number": "4",         "name": "G2",         "type": "input",-        "description": "Gate of N-channel MOSFET #2. VGS absolute maximum \u00b1 12 V; VGS(th) = 0.6-1.5 V at ID = 250 \u00b5A. Drive with 4.5 V for full enhancement (RDS(on) = 0.019 \u03a9)."+        "description": "Gate of N-channel MOSFET #2. VGS absolute maximum ± 12 V; VGS(th) = 0.6-1.5 V at ID = 250 µA. Drive with 4.5 V for full enhancement (RDS(on) = 0.019 Ω)."       },       {         "number": "5",         "name": "D2",         "type": "passive",-        "description": "Drain of N-channel MOSFET #2 (pin 5 and pin 6 are both D2, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 \u00b0C."+        "description": "Drain of N-channel MOSFET #2 (pin 5 and pin 6 are both D2, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 °C."       },       {         "number": "6",         "name": "D2",         "type": "passive",-        "description": "Drain of N-channel MOSFET #2 (pin 5 and pin 6 are both D2, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 \u00b0C."+        "description": "Drain of N-channel MOSFET #2 (pin 5 and pin 6 are both D2, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 °C."       },       {         "number": "7",         "name": "D1",         "type": "passive",-        "description": "Drain of N-channel MOSFET #1 (pin 7 and pin 8 are both D1, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 \u00b0C."+        "description": "Drain of N-channel MOSFET #1 (pin 7 and pin 8 are both D1, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 °C."       },       {         "number": "8",         "name": "D1",         "type": "passive",-        "description": "Drain of N-channel MOSFET #1 (pin 7 and pin 8 are both D1, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 \u00b0C."+        "description": "Drain of N-channel MOSFET #1 (pin 7 and pin 8 are both D1, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 °C."       }     ],     "provenance": {@@ -144,5 +144,8 @@     "docs/si9926bdy-t1-e3-vb-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file