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si9926bdy-t1-e3-vb: factory component page (tier=lcsc)

Ray ·0c7c9f7216 ·1mo ago ·parent 6261e31
1 file changed +122−8
page.json+122−8
@@ -1,13 +1,132 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "si9926bdy-t1-e3-vb",+  "title": "SI9926BDY-T1-E3-VB",+  "brief": "VBsemi Elec MOSFETs, SO-8. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "VBsemi Elec MOSFETs, SO-8. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",     "si9926bdy-t1-e3-vb"   ],+  "component": {+    "mpn": "SI9926BDY-T1-E3-VB",+    "manufacturer": "VBsemi Elec",+    "package": "SO-8",+    "pin_count": 8,+    "category": "Transistors/Thyristors",+    "subcategory": "MOSFETs",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603067729096699904",+    "parts": {+      "symbol": "si9926bdy-t1-e3-vb.kicad_sym",+      "footprint": "si9926bdy-t1-e3-vb.kicad_mod",+      "model_3d": "si9926bdy-t1-e3-vb.glb",+      "model_3d_step": "si9926bdy-t1-e3-vb.step",+      "lbr": "si9926bdy-t1-e3-vb.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "S1",+        "type": "passive",+        "description": "Source of N-channel MOSFET #1. Continuous source current (diode conduction) rated 1.7 A. Typically tied to circuit ground or the low side of the switched load."+      },+      {+        "number": "2",+        "name": "G1",+        "type": "input",+        "description": "Gate of N-channel MOSFET #1. VGS absolute maximum \u00b1 12 V; VGS(th) = 0.6-1.5 V at ID = 250 \u00b5A. Drive with 4.5 V for full enhancement (RDS(on) = 0.019 \u03a9)."+      },+      {+        "number": "3",+        "name": "S2",+        "type": "passive",+        "description": "Source of N-channel MOSFET #2. Continuous source current (diode conduction) rated 1.7 A. Independent from MOSFET #1's source."+      },+      {+        "number": "4",+        "name": "G2",+        "type": "input",+        "description": "Gate of N-channel MOSFET #2. VGS absolute maximum \u00b1 12 V; VGS(th) = 0.6-1.5 V at ID = 250 \u00b5A. Drive with 4.5 V for full enhancement (RDS(on) = 0.019 \u03a9)."+      },+      {+        "number": "5",+        "name": "D2",+        "type": "passive",+        "description": "Drain of N-channel MOSFET #2 (pin 5 and pin 6 are both D2, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 \u00b0C."+      },+      {+        "number": "6",+        "name": "D2",+        "type": "passive",+        "description": "Drain of N-channel MOSFET #2 (pin 5 and pin 6 are both D2, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 \u00b0C."+      },+      {+        "number": "7",+        "name": "D1",+        "type": "passive",+        "description": "Drain of N-channel MOSFET #1 (pin 7 and pin 8 are both D1, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 \u00b0C."+      },+      {+        "number": "8",+        "name": "D1",+        "type": "passive",+        "description": "Drain of N-channel MOSFET #1 (pin 7 and pin 8 are both D1, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 \u00b0C."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603067729096699904",+        "pages": null,+        "sha256": "d73fb256a53213ce",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 8,+        "described": 8,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "VBsemi Elec",+      "Package": "SO-8",+      "Category": "Transistors/Thyristors",+      "Pins": "8"+    }+  },+  "variants": [+    {+      "mpn": "SI9926BDY-T1-E3-VB",+      "kind": "packaging"+    }+  ],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "si9926bdy-t1-e3-vb"+  ],+  "discovery_pitch": "SI9926BDY-T1-E3-VB (VBsemi Elec) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +144,5 @@     "docs/si9926bdy-t1-e3-vb-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file