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SI9801DY-T1-E3-JSM

Public Made by Adom

by adom

JSMSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Contents

README

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SI9801DY-T1-E3-JSM

JSMSEMI · MOSFETs · SOP-8

SI9801DY-T1-E3-JSM from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of the n-channel MOSFET (30V, 7.2A, RDS(ON) 20mΩ at VGS=10V).
2 G2 input Gate of the n-channel MOSFET, with VGS rated ±20V.
3 S1 passive Source of the p-channel MOSFET (-30V, -6.8A, RDS(ON) 36mΩ at VGS=-10V).
4 G1 input Gate of the p-channel MOSFET, with VGS rated ±20V.
5 D1 passive Drain of the p-channel MOSFET, with VDS rated -30V; pins 5 and 6 are tied together.
6 D1 passive Drain of the p-channel MOSFET, with VDS rated -30V; pins 5 and 6 are tied together.
7 D2 passive Drain of the n-channel MOSFET, with VDS rated 30V; pins 7 and 8 are tied together.
8 D2 passive Drain of the n-channel MOSFET, with VDS rated 30V; pins 7 and 8 are tied together.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (n-channel) VDS 30 V n-channel 1
Drain-Source Voltage (p-channel) VDS -30 V p-channel 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 7.2 A TA=25°C, n-channel 1
Continuous Drain Current ID 6.2 A TA=70°C, n-channel 1
Continuous Drain Current ID -6.8 A TA=25°C, p-channel 1
Continuous Drain Current ID -5.5 A TA=70°C, p-channel 1
Pulsed Drain Current IDM 64 A n-channel 1
Pulsed Drain Current IDM -40 A p-channel 1
Avalanche Current IAR 12 A n-channel 1
Avalanche Current IAR 9 A p-channel 1
Repetitive Avalanche Energy EAR 43 mJ 0.3mH, n-channel 1
Repetitive Avalanche Energy EAR 17 mJ 0.3mH, p-channel 1
Power Dissipation PD 2 W TA=25°C 1
Power Dissipation PD 1.44 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient (t ≤ 10s) RθJA 50 62.5 °C/W t ≤ 10s, n-ch 1
Maximum Junction-to-Ambient (steady-state) RθJA 80 100 °C/W Steady-State, n-ch 1
Maximum Junction-to-Lead RθJL 32 40 °C/W n-ch 1
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA TJ=55°C 2
Gate-Body Leakage Current IGSS 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.6 V VDS=VGS, ID=250µA 2
On-State Drain Current ID(ON) 64 A VGS=10V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 18.7 28 mΩ VGS=10V, ID=7.2A 2
Static Drain-Source On-Resistance RDS(ON) 25 32 mΩ TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 24.8 36 mΩ VGS=4.5V, ID=5A 2
Forward Transconductance gFS 20 S VDS=5V, ID=7.2A 2
Diode Forward Voltage VSD 0.74 1 V IS=2.5A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 2.5 A 2
Pulsed Body-Diode Current ISM 64 A 2
Gate Resistance Rg 1.8 2.8 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 7.2 11 nC VGS=10V, VDS=15V, ID=7.2A 2
Body Diode Reverse Recovery Time trr 10.5 12.6 ns IF=7.2A, dI/dt=100A/µs 2
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250µA, VGS=0V 5
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 5
Zero Gate Voltage Drain Current IDSS -5 µA TJ=55°C 5
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 5
Gate Threshold Voltage VGS(th) -1 -1.5 -2.4 V VDS=VGS, ID=-250µA 5
On-State Drain Current ID(ON) -40 A VGS=-10V, VDS=-5V 5
Static Drain-Source On-Resistance RDS(ON) 36 48 mΩ VGS=-10V, ID=-6.3A 5
Static Drain-Source On-Resistance RDS(ON) 48 58 mΩ VGS=-4.5V, ID=-3.5A 5
Forward Transconductance gFS 19 S VDS=-5V, ID=-5.3A 5
Diode Forward Voltage VSD -0.8 -1 V IS=-3.5A, VGS=0V 5
Maximum Body-Diode Continuous Current IS -3.5 A 5
Pulsed Body-Diode Current ISM -40 A 5
Gate Resistance Rg 3.2 5 Ω VGS=0V, VDS=0V, f=1MHz 5
Total Gate Charge (10V) Qg 13.6 16 nC VGS=-10V, VDS=-15V, ID=-5.3A 5

CAD (KiCad official)

  • Symbol: SI9801DY-T1-E3-JSM
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si9801dy-t1-e3-jsm-etched.step / si9801dy-t1-e3-jsm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si9801dy-t1-e3-jsm.step / si9801dy-t1-e3-jsm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (8 pp, sha256 d7f7e9b9a7d87fc3, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF