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SI9433BDY-T1-E3-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI9433BDY-T1-E3-VB

VBsemi Elec · MOSFETs · SO-8

SI9433BDY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the body diode continuous source-drain current IS is rated at -6 A at TC = 25 °C.
2 S passive Source terminal of the P-channel MOSFET; the body diode continuous source-drain current IS is rated at -6 A at TC = 25 °C.
3 S passive Source terminal of the P-channel MOSFET; the body diode continuous source-drain current IS is rated at -6 A at TC = 25 °C.
4 G input Gate terminal of the P-channel MOSFET; the gate-source voltage VGS is rated at ±12 V.
5 D passive Drain terminal of the P-channel MOSFET; the drain-source voltage VDS is rated at -20 V.
6 D passive Drain terminal of the P-channel MOSFET; the drain-source voltage VDS is rated at -20 V.
7 D passive Drain terminal of the P-channel MOSFET; the drain-source voltage VDS is rated at -20 V.
8 D passive Drain terminal of the P-channel MOSFET; the drain-source voltage VDS is rated at -20 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -13 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current ID -10 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current ID -8 A TA = 25 °C (notes b, c) 1
Pulsed Drain Current IDM -50 A 1
Continuous Source-Drain Diode Current IS -6 A TC = 25 °C (note a) 1
Continuous Source-Drain Diode Current IS -2.9 A TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 19 W TC = 25 °C 1
Maximum Power Dissipation PD 12 W TC = 70 °C 1
Maximum Power Dissipation PD 3.5 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 2.2 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C notes d, e 1
Maximum Junction-to-Ambient RthJA 28 36 °C/W t ≤ 5 s (notes b, e) 1
Maximum Junction-to-Case (Drain) Steady State RthJC 5.3 6.5 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -1.2 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -20 20 µA VDS = 0 V, VGS = ±12 V 2
Gate-Source Leakage IGSS -0.5 0.5 µA VDS = 0 V, VGS = ±4.5 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -20 A VDS ≤ -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.015 Ω VGS = -4.5 V, ID = -5.6 A 2
Drain-Source On-State Resistance RDS(on) 0.021 Ω VGS = -2.5 V, ID = -5.3 A 2
Drain-Source On-State Resistance RDS(on) 0.04 Ω VGS = -1.8 V, ID = -2.5 A 2
Gate Resistance Rg 0.2 1 2 kΩ f = 1 MHz 2
Total Gate Charge Qg 50 75 nC VDS = -10 V, VGS = -8 V, ID = -5 A 2
Total Gate Charge Qg 20 30 nC VDS = -10 V, VGS = -4.5 V, ID = -5 A 2
Turn-On Delay Time td(on) 0.71 1.1 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 1.7 2.6 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 3.2 5 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 0.3 0.45 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 0.6 0.9 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 10 15 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 3.5 5.5 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -6 A TC = 25 °C 2
Pulse Diode Forward Current ISM -50 A 2
Body Diode Voltage VSD -0.85 -1.2 V IS = -5 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 30 60 ns IF = 6 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 20 40 nC 2
VDS Temperature Coefficient ΔVDS/TJ -12 mV/°C ID = -250 µA 2
Forward Transconductance gfs 35 S VDS = -10 V, ID = -5.6 A 2
Gate-Source Charge Qgs 3.3 nC 2
Gate-Drain Charge Qgd 8.4 nC 2
Reverse Recovery Fall Time ta 13 ns 2
Reverse Recovery Rise Time tb 17 ns 2
Turn-Off Delay Time td(off) 69 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -4.5 V, Rg = 1 Ω 2

CAD (KiCad official)

  • Symbol: SI9433BDY-T1-E3-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si9433bdy-t1-e3-vb-etched.step / si9433bdy-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si9433bdy-t1-e3-vb.step / si9433bdy-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 a22c7c9ec9fdd852, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF