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SI8661BD-B-ISR

Public Made by Adom

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SKYWORKS/SILICON LABS Digital Isolators, SOIC-16-300mil. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI8661BD-B-ISR

SKYWORKS/SILICON LABS · Digital Isolators · SOIC-16-300mil

SI8661BD-B-ISR from SKYWORKS/SILICON LABS, in a SOIC-16-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in Side 1 power supply, 2.5-5.5 V operating with a 0.1 µF bypass capacitor to GND1 placed close to the package.
2 A1 input Side 1 digital input.
3 A2 input Side 1 digital input.
4 A3 input Side 1 digital input.
5 A4 input Side 1 digital input (Si8661 has 5 inputs on the VDD1 side).
6 A5 input Side 1 digital input (Si8661 has 5 inputs on the VDD1 side).
7 A6 output Side 1 digital output (the single reverse channel of the Si8661, driven from B6).
8 GND1 power_in Side 1 ground.
9 GND2 power_in Side 2 ground.
10 B6 input Side 2 digital input (the single reverse channel of the Si8661, passed to A6).
11 B5 output Side 2 digital output.
12 B4 output Side 2 digital output.
13 B3 output Side 2 digital output.
14 B2 output Side 2 digital output.
15 B1 output Side 2 digital output.
16 VDD2 power_in Side 2 power supply, 2.5-5.5 V operating with a 0.1 µF bypass capacitor to GND2 placed close to the package.

Key specifications

Parameter Value
Manufacturer SKYWORKS/SILICON LABS
Package SOIC-16-300mil
Category Signal Isolation Devices
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Junction Operating Temperature TJ 150 °C 11
Ambient Operating Temperature TA -40 25 125 °C 11
Supply Voltage VDD1 VDD1 2.375 5.5 V 11
Supply Voltage VDD2 VDD2 2.375 5.5 V 11
Storage Temperature TSTG -65 150 °C 26
Ambient Temperature Under Bias TA -40 125 °C 26
Junction Temperature TJ 150 °C 26
Supply Voltage VDD1, VDD2 -0.5 7 V 26
Input Voltage VI -0.5 V max printed as VDD + 0.5 26
Output Voltage VO -0.5 V max printed as VDD + 0.5 26
Output Current Drive Channel IO 10 mA 26
Lead Solder Temperature 260 °C 10 s 26
Maximum Isolation (Input to Output) 6500 VRMS 1 sec, WB SOIC-16 26
IC Junction-to-Air Thermal Resistance θJA 100 °C/W WB SOIC-16 24
VDD Undervoltage Threshold rising VDDUV+ 1.95 2.24 2.375 V VDD1, VDD2 rising 11
VDD Undervoltage Threshold falling VDDUV- 1.88 2.16 2.325 V VDD1, VDD2 falling 11
VDD Undervoltage Hysteresis VDDHYS 50 70 95 mV 11
Positive-Going Input Threshold VT+ 1.4 1.67 1.9 V All inputs rising 11
Negative-Going Input Threshold VT- 1 1.23 1.4 V All inputs falling 11
Input Hysteresis VHYS 0.38 0.44 0.5 V 11
High Level Input Voltage VIH 2 V 11
Low Level Input Voltage VIL 0.8 V 11
High Level Output Voltage (5 V) VOH 4.8 V Ioh = -4 mA; min printed as VDD1,VDD2, 0.4; VDD = 5 V ±10% 11
Low Level Output Voltage VOL 0.2 0.4 V Iol = 4 mA 11
Input Leakage Current IL -10 10 µA 11
DC Supply Current VDD1, VI = 0 (Bx) IDD1 1.7 2.7 mA Si8661Bx, all inputs 0 V or at supply, VDD = 5 V ±10% 12
DC Supply Current VDD2, VI = 0 (Bx) IDD2 3.4 5.1 mA Si8661Bx, all inputs 0 V or at supply, VDD = 5 V ±10% 12
DC Supply Current VDD1, VI = 1 (Bx) IDD1 7.9 11.1 mA Si8661Bx, all inputs 0 V or at supply, VDD = 5 V ±10% 12
DC Supply Current VDD2, VI = 1 (Bx) IDD2 4.8 7.2 mA Si8661Bx, all inputs 0 V or at supply, VDD = 5 V ±10% 12
1 Mbps Supply Current VDD1 IDD1 4.9 6.9 mA Si8661Bx, inputs 500 kHz square wave, CI = 15 pF, VDD = 5 V ±10% 12
1 Mbps Supply Current VDD2 IDD2 4.6 6.4 mA Si8661Bx, inputs 500 kHz square wave, CI = 15 pF, VDD = 5 V ±10% 12
10 Mbps Supply Current VDD1 IDD1 5.2 7.3 mA Si8661Bx, inputs 5 MHz square wave, CI = 15 pF, VDD = 5 V ±10% 12
10 Mbps Supply Current VDD2 IDD2 6.1 8.5 mA Si8661Bx, inputs 5 MHz square wave, CI = 15 pF, VDD = 5 V ±10% 12
100 Mbps Supply Current VDD1 (5 V) IDD1 8.8 11.8 mA Si8661Bx, inputs 50 MHz square wave, CI = 15 pF, VDD = 5 V ±10% 13
100 Mbps Supply Current VDD2 (5 V) IDD2 23 29.8 mA Si8661Bx, inputs 50 MHz square wave, CI = 15 pF, VDD = 5 V ±10% 13
100 Mbps Supply Current VDD1 (3.3 V) IDD1 7.4 9.9 mA Si8661Bx, inputs 50 MHz square wave, CI = 15 pF, VDD = 3.3 V ±10% 17
100 Mbps Supply Current VDD2 (3.3 V) IDD2 16.4 21.3 mA Si8661Bx, inputs 50 MHz square wave, CI = 15 pF, VDD = 3.3 V ±10% 17
100 Mbps Supply Current VDD1 (2.5 V) IDD1 6.7 9.1 mA Si8661Bx, inputs 50 MHz square wave, CI = 15 pF, VDD = 2.5 V ±5% 21
100 Mbps Supply Current VDD2 (2.5 V) IDD2 13.4 17.4 mA Si8661Bx, inputs 50 MHz square wave, CI = 15 pF, VDD = 2.5 V ±5% 21
Maximum Data Rate 0 150 Mbps Si866xBx 13
Minimum Pulse Width 5 ns Si866xBx 13
Propagation Delay (5 V, 3.3 V) tPHL, tPLH 5 8 13 ns See Figure 4.1; VDD = 5 V ±10% 13
Pulse Width Distortion (5 V, 3.3 V) PWD 0.2 4.5 ns /tPLH - tPHL/; See Figure 4.1; VDD = 5 V ±10% 13
Propagation Delay Skew (5 V, 3.3 V) tPSK(P-P) 2 4.5 ns VDD = 5 V ±10% 13
Channel-Channel Skew tPSK 0.4 2.5 ns VDD = 5 V ±10% 13
Propagation Delay (2.5 V) tPHL, tPLH 5 8 14 ns See Figure 4.1; VDD = 2.5 V ±5% 21
Pulse Width Distortion (2.5 V) PWD 0.2 5 ns /tPLH - tPHL/; See Figure 4.1; VDD = 2.5 V ±5% 21
Propagation Delay Skew (2.5 V) tPSK(P-P) 2 5 ns VDD = 2.5 V ±5% 21
Output Rise Time tr 2.5 4 ns CL = 15 pF (See Figure 4.1) 13
Output Fall Time tf 2.5 4 ns CL = 15 pF (See Figure 4.1) 13
Common Mode Transient Immunity CMTI 35 50 kV/µs VI = VDD or 0 V, VCM = 1500 V 14
Startup Time tSU 15 40 µs 14
Peak Eye Diagram Jitter tJIT(PK) 350 ps 13
Output Impedance ZO 50 Ω approximately 50 Ω, ±40% per note 11
Capacitance (Input-Output) CIO 2 pF f = 1 MHz, WB SOIC-16 22
Input Capacitance CI 4 pF WB SOIC-16 22

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC 4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components. 32

CAD (KiCad official)

  • Symbol: SI8661BD-B-ISR
  • Footprint: Package_SO:SOIC-16_3.9x9.9mm_P1.27mm
  • 3D model: SOIC-16-300mil (KiCad packages3D, STEP)
  • 3D model files: si8661bd-b-isr-etched.step / si8661bd-b-isr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si8661bd-b-isr.step / si8661bd-b-isr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SKYWORKS/SILICON LABS datasheet (42 pp, sha256 268d7e9331d86e3d, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF