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SI8645BC-B-IS1

Skyworks Solutions · Digital Isolators · SOIC-16

SI8645BC-B-IS1 from Skyworks Solutions, in a SOIC-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in Side 1 power supply; the device operates from 2.5 to 5.5 V and requires a 0.1 µF bypass capacitor between VDD1 and GND1.
2 GND1 power_in Side 1 ground, which must be externally connected to the respective ground on narrow-body devices.
3 A1 input Side 1 digital input.
4 A2 input Side 1 digital input.
5 A3 bidirectional Side 1 digital input or output.
6 A4 bidirectional Side 1 digital input or output.
7 NC unconnected No connect on Si8645; the pin is not internally connected and can be left floating, tied to VDD, or tied to GND.
8 GND1 power_in Side 1 ground, which must be externally connected to the respective ground on narrow-body devices.
9 GND2 power_in Side 2 ground, which must be connected to external ground on narrow-body devices.
10 EN2/NC unconnected No connect on Si8645; the pin is not internally connected and can be left floating, tied to VDD, or tied to GND.
11 B4 bidirectional Side 2 digital input or output.
12 B3 bidirectional Side 2 digital input or output.
13 B2 output Side 2 digital output.
14 B1 output Side 2 digital output.
15 GND2 power_in Side 2 ground, which must be connected to external ground on narrow-body devices.
16 VDD2 power_in Side 2 power supply; the device operates from 2.5 to 5.5 V and requires a 0.1 µF bypass capacitor between VDD2 and GND2.

Key specifications

Parameter Value
Manufacturer Skyworks Solutions
Package SOIC-16
Category Signal Isolation Devices
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Junction Operating Temperature TJ 150 °C 12
Ambient Operating Temperature TA -40 25 125 °C 12
Supply Voltage (side 1) VDD1 2.375 5.5 V 12
Supply Voltage (side 2) VDD2 2.375 5.5 V 12
Storage Temperature TSTG -65 150 °C 28
Operating Temperature TA -40 125 °C 28
Junction Temperature TJ 150 °C 28
Supply Voltage VDD1, VDD2 -0.5 7 V 28
Input Voltage (max VDD + 0.5 V) VI -0.5 V max = VDD + 0.5 V 28
Output Voltage (max VDD + 0.5 V) VO -0.5 V max = VDD + 0.5 V 28
Output Current Drive Channel IO 10 mA 28
Lead Solder Temperature 260 °C 10 s 28
Maximum Isolation (Input to Output) NB SOIC-16, QSOP-16 4500 VRMS 1 sec 28
IC Junction-to-Air Thermal Resistance θJA 105 °C/W NB SOIC-16/QSOP-16 27
VDD Undervoltage Threshold (rising) VDDUV+ 1.95 2.24 2.375 V VDD1, VDD2 rising 12
VDD Undervoltage Threshold (falling) VDDUV- 1.88 2.16 2.325 V VDD1, VDD2 falling 12
VDD Undervoltage Hysteresis VDDHYS 50 70 95 mV 12
Positive-Going Input Threshold VT+ 1.4 1.67 1.9 V All inputs rising 12
Negative-Going Input Threshold VT- 1 1.23 1.4 V All inputs falling 12
Input Hysteresis VHYS 0.38 0.44 0.5 V 12
High Level Input Voltage VIH 2 V 12
Low Level Input Voltage VIL 0.8 V 12
High Level Output Voltage (min VDD1, VDD2, 0.4 V), 5 V table VOH 4.8 V loh = -4 mA; VDD1, VDD2 = 5 V ±10% 12
Low Level Output Voltage, 5 V table VOL 0.2 0.4 V lol = 4 mA; VDD1, VDD2 = 5 V ±10% 12
Input Leakage Current (Si864xxA/B/C/D) IL -10 10 µA 12
DC Supply Current VDD1 (Si8645Bx) VDD1 1 1.6 mA All inputs 0 V or at supply; VI = 0(Bx), 1(Ex) 13
DC Supply Current VDD2 (Si8645Bx) VDD2 2.4 3.8 mA All inputs 0 V or at supply; VI = 0(Bx), 1(Ex) 13
DC Supply Current VDD1 (Si8645Bx) VDD1 6.1 9.2 mA All inputs 0 V or at supply; VI = 1(Bx), 0(Ex) 13
DC Supply Current VDD2 (Si8645Bx) VDD2 2.5 4 mA All inputs 0 V or at supply; VI = 1(Bx), 0(Ex) 13
1 Mbps Supply Current VDD1 (Si8645Bx) 3.6 5 mA All inputs = 500 kHz square wave, CI = 15 pF on all outputs 13
1 Mbps Supply Current VDD2 (Si8645Bx) 2.9 4 mA All inputs = 500 kHz square wave, CI = 15 pF on all outputs 13
10 Mbps Supply Current VDD1 (Si8645xA/B/C/D) 3.6 5 mA All inputs = 5 MHz square wave, CI = 15 pF on all outputs 13
10 Mbps Supply Current VDD2 (Si8645xA/B/C/D), 5 V table 4 5.6 mA All inputs = 5 MHz square wave, CI = 15 pF on all outputs; VDD = 5 V 13
10 Mbps Supply Current VDD2 (Si8645xA/B/C/D), 3.3 V table 3.4 4.7 mA All inputs = 5 MHz square wave, CI = 15 pF on all outputs; VDD = 3.3 V 17
10 Mbps Supply Current VDD2 (Si8645xA/B/C/D), 2.5 V table 3.1 4.3 mA All inputs = 5 MHz square wave, CI = 15 pF on all outputs; VDD = 2.5 V 21
100 Mbps Supply Current VDD1 (Si8645xA/B/C/D) 3.6 5 mA All inputs = 50 MHz square wave, CI = 15 pF on all outputs 14
100 Mbps Supply Current VDD2 (Si8645xA/B/C/D), 5 V table 17.5 22.8 mA All inputs = 50 MHz square wave, CI = 15 pF on all outputs; VDD = 5 V 14
100 Mbps Supply Current VDD2 (Si8645xA/B/C/D), 3.3 V table 12.3 15.9 mA All inputs = 50 MHz square wave, CI = 15 pF on all outputs; VDD = 3.3 V 19
100 Mbps Supply Current VDD2 (Si8645xA/B/C/D), 2.5 V table 9.9 12.8 mA All inputs = 50 MHz square wave, CI = 15 pF on all outputs; VDD = 2.5 V 23
Maximum Data Rate 0 150 Mbps Si864xBx, Ex 14
Minimum Pulse Width 5 ns 14
Propagation Delay (5 V and 3.3 V tables) tPHL, tPLH 5 8 13 ns See Figure 4.2 14
Propagation Delay (2.5 V table) tPHL, tPLH 5 8 14 ns See Figure 4.2; VDD = 2.5 V ±5% 23
Pulse Width Distortion (5 V and 3.3 V tables) PWD 0.2 4.5 ns See Figure 4.2; /tPLH, tPHL/ 14
Pulse Width Distortion (2.5 V table) PWD 0.2 5 ns See Figure 4.2; /tPLH, tPHL/; VDD = 2.5 V ±5% 23
Propagation Delay Skew (5 V and 3.3 V tables) tPSK(P-P) 2 4.5 ns See Figure 4.2 14
Propagation Delay Skew (2.5 V table) tPSK(P-P) 2 5 ns See Figure 4.2; VDD = 2.5 V ±5% 23
Channel-Channel Skew tPSK 0.4 2.5 ns 14
Output Rise Time tr 2.5 4 ns CL = 15 pF 14
Output Fall Time tf 2.5 4 ns CL = 15 pF 15
Common Mode Transient Immunity (Si86xxxA/B/C/D) CMTI 35 50 kV/µs VI = VDD or 0 V; VCM = 1500 V 15
Enable to Data Valid ten1 6 11 ns See Figure 4.1 15
Enable to Data Tri-State ten2 8 12 ns See Figure 4.1 15
Input power loss to valid default output tSD 8 12 ns See Figure 3.1 15
Start-up Time tSU 15 40 µs 15
High Level Output Voltage (min VDD1, VDD2, 0.4 V), 3.3 V table VOH 3.1 V loh = -4 mA; VDD1, VDD2 = 3.3 V ±10% 17
High Level Output Voltage (min VDD1, VDD2, 0.4 V), 2.5 V table VOH 2.3 V loh = -4 mA; VDD1, VDD2 = 2.5 V ±5% 21

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC 4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components. 35

CAD (KiCad official)

  • Symbol: SI8645BC-B-IS1
  • Footprint: Package_SO:SOIC-16_3.9x9.9mm_P1.27mm
  • 3D model: SOIC-16 (KiCad packages3D, STEP)
  • 3D model files: si8645bc-b-is1-etched.step / si8645bc-b-is1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si8645bc-b-is1.step / si8645bc-b-is1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Skyworks Solutions datasheet (46 pp, sha256 032aeb8b1ade5e14, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF