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SI8641BB-B-IS1
Public Made by Adomby adom
Skyworks Solutions Digital Isolators, SOIC-16. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI8641BB-B-IS1
Skyworks Solutions · Digital Isolators · SOIC-16
SI8641BB-B-IS1 from Skyworks Solutions, in a SOIC-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD1 | power_in | Side 1 power supply, specified as powered for 2.5 V < VDD < 5.5 V, and requires a 0.1 µF bypass capacitor between VDD1 and GND1 placed as close to the package as possible. |
| 2 | GND1 | power_in | Side 1 ground; on narrow-body devices this pin must be externally connected to ground. |
| 3 | A1 | input | Side 1 digital input, a Schmitt-trigger input for high noise immunity. |
| 4 | A2 | input | Side 1 digital input, a Schmitt-trigger input for high noise immunity. |
| 5 | A3 | bidirectional | Side 1 digital input or output. |
| 6 | A4 | bidirectional | Side 1 digital input or output. |
| 7 | EN1 | input | Side 1 active high enable; when disabled (EN = 0) the Side 1 outputs are driven to high impedance, and it is recommended to tie this input to a defined logic level in noisy environments. |
| 8 | GND1 | power_in | Side 1 ground; on narrow-body devices this pin must be externally connected to ground. |
| 9 | GND2 | power_in | Side 2 ground; on narrow-body devices this pin must be connected to external ground. |
| 10 | EN2 | input | Side 2 active high enable; when disabled (EN = 0) the Side 2 outputs are driven to high impedance. |
| 11 | B4 | bidirectional | Side 2 digital input or output. |
| 12 | B3 | bidirectional | Side 2 digital input or output. |
| 13 | B2 | output | Side 2 digital output. |
| 14 | B1 | output | Side 2 digital output. |
| 15 | GND2 | power_in | Side 2 ground; on narrow-body devices this pin must be connected to external ground. |
| 16 | VDD2 | power_in | Side 2 power supply, specified as powered for 2.5 V < VDD < 5.5 V, and requires a 0.1 µF bypass capacitor between VDD2 and GND2. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Skyworks Solutions |
| Package | SOIC-16 |
| Category | Signal Isolation Devices |
| Pins | 16 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage VDD1 (recommended) | VDD1 | 2.375 | 5.5 | V | 12 | ||
| Supply Voltage VDD2 (recommended) | VDD2 | 2.375 | 5.5 | V | 12 | ||
| Ambient Operating Temperature | TA | -40 | 25 | 125 | °C | Max depends on data frequency, load, channels and supply (table note 1) | 12 |
| Junction Operating Temperature | TJ | 150 | °C | 12 | |||
| Storage Temperature | TSTG | -65 | 150 | °C | 28 | ||
| Supply Voltage | VDD1, VDD2 | -0.5 | 7 | V | 28 | ||
| Input Voltage | VI | -0.5 | V | Max printed as VDD + 0.5 V | 28 | ||
| Output Voltage | VO | -0.5 | V | Max printed as VDD + 0.5 V | 28 | ||
| Output Current Drive Channel | IO | 10 | mA | 28 | |||
| Lead Solder Temperature | 260 | °C | 10 s | 28 | |||
| Maximum Isolation (Input to Output) | 6500 | VRMS | 1 s, WB SOIC-16 | 28 | |||
| VDD Undervoltage Threshold rising | VDDUV+ | 1.95 | 2.24 | 2.375 | V | VDD 5 V ±10%; VDD1, VDD2 rising | 12 |
| VDD Undervoltage Threshold falling | VDDUV- | 1.88 | 2.16 | 2.325 | V | VDD 5 V ±10%; VDD1, VDD2 falling | 12 |
| VDD Undervoltage Hysteresis | VDDHYS | 50 | 70 | 95 | mV | VDD 5 V ±10% | 12 |
| Positive-Going Input Threshold | VT+ | 1.4 | 1.67 | 1.9 | V | VDD 5 V ±10%; all inputs rising | 12 |
| Negative-Going Input Threshold | VT- | 1 | 1.23 | 1.4 | V | VDD 5 V ±10%; all inputs falling | 12 |
| Input Hysteresis | VHYS | 0.38 | 0.44 | 0.5 | V | VDD 5 V ±10% | 12 |
| High Level Input Voltage | VIH | 2 | V | VDD 5 V ±10% | 12 | ||
| Low Level Input Voltage | VIL | 0.8 | V | VDD 5 V ±10% | 12 | ||
| Low Level Output Voltage | VOL | 0.2 | 0.4 | V | VDD 5 V ±10%; lol = 4 mA | 12 | |
| Input Leakage Current | IL | -10 | 10 | µA | Si864xxA/B/C/D; printed ±10 | 12 | |
| Enable Input Current | IENH, IENL | 2 | µA | Si864xxA/B/C/D; VENx = VIH or VIL | 12 | ||
| DC Supply Current VDD1 (VI = 0 Bx / 1 Ex) | 1.4 | 2.2 | mA | VDD 5 V ±10%; all inputs 0 V or at supply; Si8641xA/B/C/D | 13 | ||
| DC Supply Current VDD2 (VI = 0 Bx / 1 Ex) | 2.3 | 3.7 | mA | VDD 5 V ±10%; all inputs 0 V or at supply; Si8641xA/B/C/D | 13 | ||
| DC Supply Current VDD1 (VI = 1 Bx / 0 Ex) | 5.2 | 7.4 | mA | VDD 5 V ±10%; all inputs 0 V or at supply; Si8641xA/B/C/D | 13 | ||
| DC Supply Current VDD2 (VI = 1 Bx / 0 Ex) | 3.6 | 5.4 | mA | VDD 5 V ±10%; all inputs 0 V or at supply; Si8641xA/B/C/D | 13 | ||
| 1 Mbps Supply Current VDD1 | 3.4 | 4.8 | mA | VDD 5 V ±10%; all inputs 500 kHz square wave, CI = 15 pF; Si8641Bx, Ex | 13 | ||
| 1 Mbps Supply Current VDD2 | 3.3 | 4.6 | mA | VDD 5 V ±10%; all inputs 500 kHz square wave, CI = 15 pF; Si8641Bx, Ex | 13 | ||
| 10 Mbps Supply Current VDD1 | 3.7 | 5.2 | mA | VDD 5 V ±10%; all inputs 5 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 14 | ||
| 10 Mbps Supply Current VDD2 | 4.1 | 5.8 | mA | VDD 5 V ±10%; all inputs 5 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 14 | ||
| 100 Mbps Supply Current VDD1 | 7.3 | 9.8 | mA | VDD 5 V ±10%; all inputs 50 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 14 | ||
| 100 Mbps Supply Current VDD2 | 14.3 | 18.5 | mA | VDD 5 V ±10%; all inputs 50 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 14 | ||
| 1 Mbps Supply Current VDD1 (3.3 V table) | 3.4 | 4.8 | mA | VDD 3.3 V ±10%; all inputs 500 kHz square wave, CI = 15 pF; Si8641Bx, Ex | 13 | ||
| 10 Mbps Supply Current VDD1 (3.3 V) | 3.5 | 4.9 | mA | VDD 3.3 V ±10%; all inputs 5 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 18 | ||
| 10 Mbps Supply Current VDD2 (3.3 V) | 3.6 | 5.1 | mA | VDD 3.3 V ±10%; all inputs 5 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 18 | ||
| 100 Mbps Supply Current VDD1 (3.3 V) | 5.9 | 7.9 | mA | VDD 3.3 V ±10%; all inputs 50 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 19 | ||
| 100 Mbps Supply Current VDD2 (3.3 V) | 10.3 | 13.4 | mA | VDD 3.3 V ±10%; all inputs 50 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 19 | ||
| 10 Mbps Supply Current VDD1 (2.5 V) | 3.5 | 4.8 | mA | VDD 2.5 V ±5%; all inputs 5 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 22 | ||
| 10 Mbps Supply Current VDD2 (2.5 V) | 3.4 | 4.8 | mA | VDD 2.5 V ±5%; all inputs 5 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 22 | ||
| 100 Mbps Supply Current VDD1 (2.5 V) | 5.2 | 7 | mA | VDD 2.5 V ±5%; all inputs 50 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 23 | ||
| 100 Mbps Supply Current VDD2 (2.5 V) | 8.5 | 11.1 | mA | VDD 2.5 V ±5%; all inputs 50 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 23 | ||
| Maximum Data Rate | 0 | 150 | Mbps | Si864xBx, Ex | 14 | ||
| Minimum Pulse Width | 5 | ns | Si864xBx, Ex | 14 | |||
| Propagation Delay (5 V, 3.3 V tables) | tPHL, tPLH | 5 | 8 | 13 | ns | Si864xBx, Ex; See Figure 4.2 | 14 |
| Propagation Delay (2.5 V table) | tPHL, tPLH | 5 | 8 | 14 | ns | Si864xBx, Ex; See Figure 4.2 | 23 |
| Pulse Width Distortion (5 V, 3.3 V tables) | PWD | 0.2 | 4.5 | ns | /tPLH, tPHL/; See Figure 4.2 | 14 | |
| Pulse Width Distortion (2.5 V table) | PWD | 0.2 | 5 | ns | /tPLH, tPHL/; See Figure 4.2 | 23 | |
| Propagation Delay Skew (5 V, 3.3 V tables) | tPSK(P-P) | 2 | 4.5 | ns | See Figure 4.2 | 14 | |
| Propagation Delay Skew (2.5 V table) | tPSK(P-P) | 2 | 5 | ns | See Figure 4.2 | 23 | |
| Channel-Channel Skew | tPSK | 0.4 | 2.5 | ns | 14 | ||
| Output Rise Time | tr | 2.5 | 4 | ns | CL = 15 pF | 14 | |
| Output Fall Time | tf | 2.5 | 4 | ns | CL = 15 pF | 15 | |
| Common Mode Transient Immunity | CMTI | 35 | 60 | kV/µs | Si86xxxA/B/C/D; VI = VDD or 0 V, VCM = 1500 V | 15 | |
| Enable to Data Valid | ten1 | 6 | 11 | ns | See Figure 4.1 | 15 | |
| Enable to Data Tri-State | ten2 | 8 | 12 | ns | See Figure 4.1 | 15 | |
| Input power loss to valid default output | tSD | 8 | 12 | ns | See Figure 3.1 | 15 | |
| Start-up Time | tSU | 15 | 40 | µs | 15 | ||
| VOH High Level Output Voltage (5 V) | VOH | 4.8 | V | loh = -4 mA; min printed as VDD1, VDD2, 0.4 V | 12 | ||
| VOH High Level Output Voltage (3.3 V) | VOH | 3.1 | V | loh = -4 mA; min printed as VDD1, VDD2, 0.4 V | 17 | ||
| VOH High Level Output Voltage (2.5 V) | VOH | 2.3 | V | loh = -4 mA; min printed as VDD1, VDD2, 0.4 V | 21 | ||
| IC Junction-to-Air Thermal Resistance | θJA | 100 | °C/W | WB SOIC-16 | 27 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | 4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components. | 35 |
CAD (KiCad official)
- Symbol:
SI8641BB-B-IS1 - Footprint:
Package_SO:SOIC-16_3.9x9.9mm_P1.27mm - 3D model: SOIC-16 (KiCad packages3D, STEP)
- 3D model files:
si8641bb-b-is1-etched.step/si8641bb-b-is1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si8641bb-b-is1.step/si8641bb-b-is1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Skyworks Solutions datasheet (46 pp, sha256
032aeb8b1ade5e14, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI8641BB-B-IS1
**Skyworks Solutions** · Digital Isolators · SOIC-16
SI8641BB-B-IS1 from Skyworks Solutions, in a SOIC-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD1 | power_in | Side 1 power supply, specified as powered for 2.5 V < VDD < 5.5 V, and requires a 0.1 µF bypass capacitor between VDD1 and GND1 placed as close to the package as possible. |
| 2 | GND1 | power_in | Side 1 ground; on narrow-body devices this pin must be externally connected to ground. |
| 3 | A1 | input | Side 1 digital input, a Schmitt-trigger input for high noise immunity. |
| 4 | A2 | input | Side 1 digital input, a Schmitt-trigger input for high noise immunity. |
| 5 | A3 | bidirectional | Side 1 digital input or output. |
| 6 | A4 | bidirectional | Side 1 digital input or output. |
| 7 | EN1 | input | Side 1 active high enable; when disabled (EN = 0) the Side 1 outputs are driven to high impedance, and it is recommended to tie this input to a defined logic level in noisy environments. |
| 8 | GND1 | power_in | Side 1 ground; on narrow-body devices this pin must be externally connected to ground. |
| 9 | GND2 | power_in | Side 2 ground; on narrow-body devices this pin must be connected to external ground. |
| 10 | EN2 | input | Side 2 active high enable; when disabled (EN = 0) the Side 2 outputs are driven to high impedance. |
| 11 | B4 | bidirectional | Side 2 digital input or output. |
| 12 | B3 | bidirectional | Side 2 digital input or output. |
| 13 | B2 | output | Side 2 digital output. |
| 14 | B1 | output | Side 2 digital output. |
| 15 | GND2 | power_in | Side 2 ground; on narrow-body devices this pin must be connected to external ground. |
| 16 | VDD2 | power_in | Side 2 power supply, specified as powered for 2.5 V < VDD < 5.5 V, and requires a 0.1 µF bypass capacitor between VDD2 and GND2. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Skyworks Solutions |
| Package | SOIC-16 |
| Category | Signal Isolation Devices |
| Pins | 16 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage VDD1 (recommended) | VDD1 | 2.375 | | 5.5 | V | | 12 |
| Supply Voltage VDD2 (recommended) | VDD2 | 2.375 | | 5.5 | V | | 12 |
| Ambient Operating Temperature | TA | -40 | 25 | 125 | °C | Max depends on data frequency, load, channels and supply (table note 1) | 12 |
| Junction Operating Temperature | TJ | | | 150 | °C | | 12 |
| Storage Temperature | TSTG | -65 | | 150 | °C | | 28 |
| Supply Voltage | VDD1, VDD2 | -0.5 | | 7 | V | | 28 |
| Input Voltage | VI | -0.5 | | | V | Max printed as VDD + 0.5 V | 28 |
| Output Voltage | VO | -0.5 | | | V | Max printed as VDD + 0.5 V | 28 |
| Output Current Drive Channel | IO | | | 10 | mA | | 28 |
| Lead Solder Temperature | | | | 260 | °C | 10 s | 28 |
| Maximum Isolation (Input to Output) | | | | 6500 | VRMS | 1 s, WB SOIC-16 | 28 |
| VDD Undervoltage Threshold rising | VDDUV+ | 1.95 | 2.24 | 2.375 | V | VDD 5 V ±10%; VDD1, VDD2 rising | 12 |
| VDD Undervoltage Threshold falling | VDDUV- | 1.88 | 2.16 | 2.325 | V | VDD 5 V ±10%; VDD1, VDD2 falling | 12 |
| VDD Undervoltage Hysteresis | VDDHYS | 50 | 70 | 95 | mV | VDD 5 V ±10% | 12 |
| Positive-Going Input Threshold | VT+ | 1.4 | 1.67 | 1.9 | V | VDD 5 V ±10%; all inputs rising | 12 |
| Negative-Going Input Threshold | VT- | 1 | 1.23 | 1.4 | V | VDD 5 V ±10%; all inputs falling | 12 |
| Input Hysteresis | VHYS | 0.38 | 0.44 | 0.5 | V | VDD 5 V ±10% | 12 |
| High Level Input Voltage | VIH | 2 | | | V | VDD 5 V ±10% | 12 |
| Low Level Input Voltage | VIL | | | 0.8 | V | VDD 5 V ±10% | 12 |
| Low Level Output Voltage | VOL | | 0.2 | 0.4 | V | VDD 5 V ±10%; lol = 4 mA | 12 |
| Input Leakage Current | IL | -10 | | 10 | µA | Si864xxA/B/C/D; printed ±10 | 12 |
| Enable Input Current | IENH, IENL | | | 2 | µA | Si864xxA/B/C/D; VENx = VIH or VIL | 12 |
| DC Supply Current VDD1 (VI = 0 Bx / 1 Ex) | | | 1.4 | 2.2 | mA | VDD 5 V ±10%; all inputs 0 V or at supply; Si8641xA/B/C/D | 13 |
| DC Supply Current VDD2 (VI = 0 Bx / 1 Ex) | | | 2.3 | 3.7 | mA | VDD 5 V ±10%; all inputs 0 V or at supply; Si8641xA/B/C/D | 13 |
| DC Supply Current VDD1 (VI = 1 Bx / 0 Ex) | | | 5.2 | 7.4 | mA | VDD 5 V ±10%; all inputs 0 V or at supply; Si8641xA/B/C/D | 13 |
| DC Supply Current VDD2 (VI = 1 Bx / 0 Ex) | | | 3.6 | 5.4 | mA | VDD 5 V ±10%; all inputs 0 V or at supply; Si8641xA/B/C/D | 13 |
| 1 Mbps Supply Current VDD1 | | | 3.4 | 4.8 | mA | VDD 5 V ±10%; all inputs 500 kHz square wave, CI = 15 pF; Si8641Bx, Ex | 13 |
| 1 Mbps Supply Current VDD2 | | | 3.3 | 4.6 | mA | VDD 5 V ±10%; all inputs 500 kHz square wave, CI = 15 pF; Si8641Bx, Ex | 13 |
| 10 Mbps Supply Current VDD1 | | | 3.7 | 5.2 | mA | VDD 5 V ±10%; all inputs 5 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 14 |
| 10 Mbps Supply Current VDD2 | | | 4.1 | 5.8 | mA | VDD 5 V ±10%; all inputs 5 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 14 |
| 100 Mbps Supply Current VDD1 | | | 7.3 | 9.8 | mA | VDD 5 V ±10%; all inputs 50 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 14 |
| 100 Mbps Supply Current VDD2 | | | 14.3 | 18.5 | mA | VDD 5 V ±10%; all inputs 50 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 14 |
| 1 Mbps Supply Current VDD1 (3.3 V table) | | | 3.4 | 4.8 | mA | VDD 3.3 V ±10%; all inputs 500 kHz square wave, CI = 15 pF; Si8641Bx, Ex | 13 |
| 10 Mbps Supply Current VDD1 (3.3 V) | | | 3.5 | 4.9 | mA | VDD 3.3 V ±10%; all inputs 5 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 18 |
| 10 Mbps Supply Current VDD2 (3.3 V) | | | 3.6 | 5.1 | mA | VDD 3.3 V ±10%; all inputs 5 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 18 |
| 100 Mbps Supply Current VDD1 (3.3 V) | | | 5.9 | 7.9 | mA | VDD 3.3 V ±10%; all inputs 50 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 19 |
| 100 Mbps Supply Current VDD2 (3.3 V) | | | 10.3 | 13.4 | mA | VDD 3.3 V ±10%; all inputs 50 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 19 |
| 10 Mbps Supply Current VDD1 (2.5 V) | | | 3.5 | 4.8 | mA | VDD 2.5 V ±5%; all inputs 5 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 22 |
| 10 Mbps Supply Current VDD2 (2.5 V) | | | 3.4 | 4.8 | mA | VDD 2.5 V ±5%; all inputs 5 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 22 |
| 100 Mbps Supply Current VDD1 (2.5 V) | | | 5.2 | 7 | mA | VDD 2.5 V ±5%; all inputs 50 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 23 |
| 100 Mbps Supply Current VDD2 (2.5 V) | | | 8.5 | 11.1 | mA | VDD 2.5 V ±5%; all inputs 50 MHz square wave, CI = 15 pF; Si8641Bx, Ex | 23 |
| Maximum Data Rate | | 0 | | 150 | Mbps | Si864xBx, Ex | 14 |
| Minimum Pulse Width | | | | 5 | ns | Si864xBx, Ex | 14 |
| Propagation Delay (5 V, 3.3 V tables) | tPHL, tPLH | 5 | 8 | 13 | ns | Si864xBx, Ex; See Figure 4.2 | 14 |
| Propagation Delay (2.5 V table) | tPHL, tPLH | 5 | 8 | 14 | ns | Si864xBx, Ex; See Figure 4.2 | 23 |
| Pulse Width Distortion (5 V, 3.3 V tables) | PWD | | 0.2 | 4.5 | ns | /tPLH, tPHL/; See Figure 4.2 | 14 |
| Pulse Width Distortion (2.5 V table) | PWD | | 0.2 | 5 | ns | /tPLH, tPHL/; See Figure 4.2 | 23 |
| Propagation Delay Skew (5 V, 3.3 V tables) | tPSK(P-P) | | 2 | 4.5 | ns | See Figure 4.2 | 14 |
| Propagation Delay Skew (2.5 V table) | tPSK(P-P) | | 2 | 5 | ns | See Figure 4.2 | 23 |
| Channel-Channel Skew | tPSK | | 0.4 | 2.5 | ns | | 14 |
| Output Rise Time | tr | | 2.5 | 4 | ns | CL = 15 pF | 14 |
| Output Fall Time | tf | | 2.5 | 4 | ns | CL = 15 pF | 15 |
| Common Mode Transient Immunity | CMTI | 35 | 60 | | kV/µs | Si86xxxA/B/C/D; VI = VDD or 0 V, VCM = 1500 V | 15 |
| Enable to Data Valid | ten1 | | 6 | 11 | ns | See Figure 4.1 | 15 |
| Enable to Data Tri-State | ten2 | | 8 | 12 | ns | See Figure 4.1 | 15 |
| Input power loss to valid default output | tSD | | 8 | 12 | ns | See Figure 3.1 | 15 |
| Start-up Time | tSU | | 15 | 40 | µs | | 15 |
| VOH High Level Output Voltage (5 V) | VOH | | 4.8 | | V | loh = -4 mA; min printed as VDD1, VDD2, 0.4 V | 12 |
| VOH High Level Output Voltage (3.3 V) | VOH | | 3.1 | | V | loh = -4 mA; min printed as VDD1, VDD2, 0.4 V | 17 |
| VOH High Level Output Voltage (2.5 V) | VOH | | 2.3 | | V | loh = -4 mA; min printed as VDD1, VDD2, 0.4 V | 21 |
| IC Junction-to-Air Thermal Resistance | θJA | | 100 | | °C/W | WB SOIC-16 | 27 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | | 4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components. | 35 |
## CAD (KiCad official)
- Symbol: `SI8641BB-B-IS1`
- Footprint: `Package_SO:SOIC-16_3.9x9.9mm_P1.27mm`
- 3D model: SOIC-16 (KiCad packages3D, STEP)
- 3D model files: `si8641bb-b-is1-etched.step` / `si8641bb-b-is1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si8641bb-b-is1.step` / `si8641bb-b-is1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Skyworks Solutions datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602704634641465344) (46 pp, sha256 `032aeb8b1ade5e14`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si8641bb-b-is1-datasheet.pdf)