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Contents

README

markdown

SI8600AB-B-IS

SILICON LABS · Digital Isolators · SOIC-8

SI8600AB-B-IS from SILICON LABS, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 AVDD power_in Side A power supply terminal; connect to a source of 3.0 to 5.5 V.
2 ASDA bidirectional Side A data (open drain) input or output.
3 ASCL bidirectional Side A clock input or output; open drain I/O for Si8600.
4 AGND power_in Side A ground terminal.
5 BGND power_in Side B ground terminal.
6 BSCL bidirectional Side B clock input or output; open drain I/O for Si8600.
7 BSDA bidirectional Side B data (open drain) input or output.
8 BVDD power_in Side B power supply terminal; connect to a source of 3.0 to 5.5 V.

Key specifications

Parameter Value
Manufacturer SILICON LABS
Package SOIC-8
Category Interface ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Ambient Operating Temperature TA -40 25 125 °C Footnote 1: max depends on data frequency, output loading, channel count and supply voltage 13
Supply Voltage (Side A) AVDD 3 5.5 V 13
Supply Voltage (Side B) BVDD 3 5.5 V 13
Si8600 AVDD Current Idda 5.4 7.6 mA All channels = 0 dc 13
Si8600 BVDD Current Iddb 4.3 6.5 mA All channels = 0 dc 13
Si8600 AVDD Current Idda 2.6 3.9 mA All channels = 1 dc 13
Si8600 BVDD Current Iddb 1.9 2.9 mA All channels = 1 dc 13
Si8600 AVDD Current Idda 3.3 5 mA All channels = 1.7 MHz 13
Si8600 BVDD Current Iddb 2.6 3.9 mA All channels = 1.7 MHz 13
Logic Input Threshold (Side A) I2CVT (Side A) 410 540 mV ISDAA, ISCLA (>0.5 mA, <3.0 mA) 14
Logic Low Output Voltage (Side A) I2CVOL (Side A) 540 800 mV ISDAA, ISCLA (>0.5 mA, <3.0 mA) 14
Input/Output Logic Low Level Difference (Side A) I2CΔV (Side A) 50 mV ISDAA, ISCLA (>0.5 mA, <3.0 mA) 14
Logic High Input Voltage (Side B) I2CVIH (Side B) 2 V 14
Logic Low Input Voltage (Side B) I2CVIL (Side B) 0.8 V 14
Logic Low Output Voltage (Side B) I2CVOL (Side B) 500 mV ISCLB = 35 mA 14
SCL and SDA Logic High Leakage Isdaa, Isdab, Iscla, Isclb 2 10 µA SDAA, SCLA = VSSA; SDAB, SCLB = VSSB 14
Maximum I2C Bus Frequency Fmax 1.7 MHz 15
Propagation Delay 5 V Side A to Side B Rising Tphab 38 45 ns No bus capacitance, R1 = 1400, R2 = 499 15
Propagation Delay 5 V Side A to Side B Falling Tplab 15 26 ns No bus capacitance, R1 = 1400, R2 = 499 15
Propagation Delay 5 V Side B to Side A Rising Tphba 33 46 ns No bus capacitance, R1 = 1400, R2 = 499 15
Propagation Delay 5 V Side B to Side A Falling Tplba 11 22 ns No bus capacitance, R1 = 1400, R2 = 499 15
Propagation Delay 3.3 V Side A to Side B Rising Tphab 44 55 ns R1 = 806, R2 = 499 15
Propagation Delay 3.3 V Side A to Side B Falling Tplab 17 29 ns R1 = 806, R2 = 499 15
Propagation Delay 3.3 V Side B to Side A Rising Tphba 30 40 ns R1 = 806, R2 = 499 15
Propagation Delay 3.3 V Side B to Side A Falling Tplba 14 27 ns R1 = 806, R2 = 499 15
Pulse Width Distortion 5 V Side A Low to Side B Low PWDAB 22 32 ns No bus capacitance, R1 = 1400, R2 = 499 15
Pulse Width Distortion 5 V Side B Low to Side A Low PWDBA 21 32 ns No bus capacitance, R1 = 1400, R2 = 499 15
Pulse Width Distortion 3.3 V Side A Low to Side B Low PWDAB 27 35 ns R1 = 806, R2 = 499 15
Pulse Width Distortion 3.3 V Side B Low to Side A Low PWDBA 15 25 ns R1 = 806, R2 = 499 15
VDD Undervoltage Threshold (rising) VDDUV+ 1.95 2.24 2.375 V VDD1, VDD2 rising 17
VDD Undervoltage Threshold (falling) VDDUV- 1.88 2.16 2.325 V VDD1, VDD2 falling 17
VDD Undervoltage Hysteresis VDDHYS 50 70 95 mV 17
Common Mode Transient Immunity CMTI 35 50 kV/µs VI = VDD or 0 V; VCM = 1500 V 17
Start-up Time tSTART 15 40 µs Time from application of power to valid data at the output 17
Storage Temperature TSTG -65 150 ºC 22
Ambient Temperature Under Bias TA -40 125 ºC 22
Junction Temperature TJ 150 °C 22
Supply Voltage VDD -0.5 7 V 22
Input Voltage VI -0.5 V Printed maximum is VDD + 0.5 V 22
Output Voltage VO -0.5 V Printed maximum is VDD + 0.5 V 22
Output Current Drive (non-I2C channels) IO -10 10 mA 22
Side A output current drive (I2C channels) IO -15 15 mA 22
Side B output current drive (I2C channels) IO -75 75 mA 22
Lead Solder Temperature 260 ºC 10 s 22
Maximum Isolation (Input to Output), NB SOIC-8 4500 VRMS 1 sec 22
Case Temperature (safety limiting) TS 150 °C IEC safety limiting value, NB SOIC-8 20
Safety Input Current (NB SOIC-8) IS 160 mA θJA = 140 °C/W (NB SOIC-8); AVDD, BVDD = 5.5 V, TJ = 150 °C, TA = 25 °C 20
Device Power Dissipation (safety limiting, NB SOIC-8) PD 220 mW 20
IC Junction-to-Air Thermal Resistance (NB SOIC-8) θJA 140 °C/W 21

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing abs 13.3 Top Marking: 16-Pin Narrow Body SOIC .....................36 silabs.com / Building a more connected world. Rev. 1.72 / 3 3

CAD (KiCad official)

  • Symbol: SI8600AB-B-IS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: si8600ab-b-is-etched.step / si8600ab-b-is-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si8600ab-b-is.step / si8600ab-b-is.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SILICON LABS datasheet (39 pp, sha256 1a5d29d7cad4bb14, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF